The invention relates to the technical field of
passivation of a
silicon solar battery and discloses a surface low-temperature
passivation method for a
solar battery. The method comprises the following steps: taking
oxygen (O2) or a mixture of
water vapor (H2O) and
oxygen (O2) as a reaction source, adding a reactant for adjusting the
refractive index of a
passivation layer, adding a reactant for inhibiting dispersion of a doped substance in a
nanostructure and an emitting
electrode and finishing preparation of the reaction source; and placing the prepared nano-surface
silicon solar battery sample with the
nanostructure into a high-pressure reaction kettle, introducing the prepared reaction source into the high-pressure reaction kettle, heating after sealing, dispersing the high-concentration reaction source and allowing the high-concentration reaction source to enter the gap of the surface
nanostructure of the nano-surface
silicon solar battery, wherein the
silicon oxide passivation layer formed by
thermal oxidation is completely covered on the surface of the nano-surface silicon, and the nanostructure and the emitting
electrode are completely wrapped by the
silicon oxide passivation layer. Preparation of the
silicon oxide passivation layer can be finished at low temperature, so damage to a prototype device by high temperature is avoided; and
dopant is added into the reaction source conveniently, so the
refractive index of the passivation layer can be adjusted.