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Surface low-temperature passivation method for solar battery

A solar cell and low-temperature technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of difficult access to the medium, damage to the original structure of the solar cell, and inability to completely cover the surface of the cell, and achieve the adjustment of the refractive index, The effect of avoiding destruction

Inactive Publication Date: 2013-04-10
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the small gaps in the nanostructures on the surface of silicon solar cells on the nanometer surface, it is difficult for the medium of chemical vapor deposition to reach the bottom of the small gaps and cannot completely cover the surface of the cell, so it is difficult to achieve the passivation effect.
Traditional thermal oxidation passivation can solve the coverage problem, but it is usually carried out at a temperature higher than 800°C, such a high temperature will destroy the original structure of the solar cell, such as the sheet resistance of the emitter and the characteristics of the pn junction

Method used

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  • Surface low-temperature passivation method for solar battery
  • Surface low-temperature passivation method for solar battery
  • Surface low-temperature passivation method for solar battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The prototype sample of the nano-surface silicon solar cell with the nanostructure 6 that has been prepared is placed in the autoclave, and 20 atmospheres of pure oxygen O are introduced into the autoclave. 2 ; Then heat the sealed autoclave to 400°C, at this time the air pressure in the autoclave increases to 4.3×106 Pa, and the sample continues to be heated for 25 minutes under this condition.

[0032] Such as figure 1 The sample after passivation by this method is shown as the method to prepare the metal lower electrode 1 and the metal upper electrode 4, and the solar cell efficiency test system is used to test the nano-surface silicon solar cells before and after passivation, and the test results It shows that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.2% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Qu...

Embodiment 2

[0034] The prototype sample of the nano-surface silicon solar cell with nanostructure 6 that has been prepared is placed in the high-pressure reactor; the air inlet of the sealed reactor is continuously fed with pure oxygen O2 flowing at 40 atmospheres and 400 ° C to adjust the reaction. The air output from the outlet of the reactor maintained the internal pressure of the reactor at 40 atmospheres; the internal temperature of the reactor was maintained at 400°C; the sample continued to be heated under this condition for 25 minutes. The test results show that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.1% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Quantum efficiency test reference before and after passivation image 3 .

[0035]

Embodiment 3

[0037] Put the prepared prototype sample of the nano-surface silicon solar cell with nanostructure 6 into the autoclave, and add 1 ml of water into the autoclave;

[0038] 10 atmospheres of pure oxygen O was introduced into the autoclave 2 ; Then heat the sealed autoclave to 300°C, at this time the pressure of the autoclave increases and is controlled at 4.0×106 Pa, and the sample continues to be heated for 25 minutes under this condition.

[0039] The test results show that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.8% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Quantum efficiency test reference before and after passivation image 3 .

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Abstract

The invention relates to the technical field of passivation of a silicon solar battery and discloses a surface low-temperature passivation method for a solar battery. The method comprises the following steps: taking oxygen (O2) or a mixture of water vapor (H2O) and oxygen (O2) as a reaction source, adding a reactant for adjusting the refractive index of a passivation layer, adding a reactant for inhibiting dispersion of a doped substance in a nanostructure and an emitting electrode and finishing preparation of the reaction source; and placing the prepared nano-surface silicon solar battery sample with the nanostructure into a high-pressure reaction kettle, introducing the prepared reaction source into the high-pressure reaction kettle, heating after sealing, dispersing the high-concentration reaction source and allowing the high-concentration reaction source to enter the gap of the surface nanostructure of the nano-surface silicon solar battery, wherein the silicon oxide passivation layer formed by thermal oxidation is completely covered on the surface of the nano-surface silicon, and the nanostructure and the emitting electrode are completely wrapped by the silicon oxide passivation layer. Preparation of the silicon oxide passivation layer can be finished at low temperature, so damage to a prototype device by high temperature is avoided; and dopant is added into the reaction source conveniently, so the refractive index of the passivation layer can be adjusted.

Description

technical field [0001] The invention relates to the technical field of passivation of silicon solar cells, in particular to a low-temperature passivation method for the surface of nano-surface silicon solar cells, which is applicable to various nano-surface silicon solar cells with nano-surfaces. Background technique [0002] As a new low-reflectivity silicon material, nano-surface silicon has ultra-low reflectivity and good broad-spectrum absorption characteristics, and supports large-angle light absorption, so it has huge applications in optoelectronic devices, especially solar cells. prospect. Although the nanostructure on the nanosurface silicon surface reduces the reflection of light, it also increases the surface area of ​​the solar cell, and the excessive recombination centers on the surface intensify the recombination of photogenerated carriers, thus limiting the improvement of conversion efficiency. In order to improve the conversion efficiency of nano-surface sili...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘维峰边继明申人升朱慧超
Owner DALIAN UNIV OF TECH
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