Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Topological boundary state regulation and control and harmonic frequency generation device based on voltage regulation

A voltage regulation and topology technology, applied in the field of nonlinear topological photonics, to achieve the effect of enhancing nonlinear optical effects and enhancing transmission efficiency

Pending Publication Date: 2022-06-24
SOUTHEAST UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different from previous studies, the topological boundary states generated by this patent are uniformly distributed at equal intervals, which makes it possible to generate high-order harmonics protected by topology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Topological boundary state regulation and control and harmonic frequency generation device based on voltage regulation
  • Topological boundary state regulation and control and harmonic frequency generation device based on voltage regulation
  • Topological boundary state regulation and control and harmonic frequency generation device based on voltage regulation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The following describes in detail how the topological phase of the structure is changed by the voltage to realize the harmonic frequency of the topological boundary state in conjunction with the description of the drawings and the specific implementation manner.

[0026] figure 1 It is a diagram of the generation device of the topological boundary state harmonic frequency based on voltage regulation. The rectangular cuboid is lithium niobate, the width is db, the length between adjacent lithium niobates is air, and the width is da. The air of da width and the lithium niobate of db width are one structural period, and the period is a. The width of lithium niobate of the right structure is db1, the length between adjacent lithium niobates is air, and the width is da1. The air of da1 width and the lithium niobate of db1 width are one structural period, and the period is a1. The lithium niobate and air with positive voltage on the left side of the device set up to form a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
electro-optic coefficientaaaaaaaaaa
Login to View More

Abstract

The invention discloses a topological boundary state and harmonic frequency generation device based on lithium niobate voltage regulation and control. The lithium niobate is orderly arranged in a free space according to a specific interval period. Positive voltage and negative voltage are respectively applied to the left side and the right side of lithium niobate, and the refractive index of the lithium niobate material can be changed by utilizing an electro-optical modulation effect. Different from previous researches, the nonlinear optical effect is enhanced due to the fact that the topological structure has a strong local field at the boundary. Besides, topological boundary states generated by the structure are uniformly distributed in an arithmetic progression manner, which means that when the fundamental frequency light is in one boundary mode, the harmonic frequency light is also in a topological boundary state mode, so that all generated harmonic frequency light is immune to impurities or defects in the structure and has no backscattering, and the structure is protected by topology. The nonlinear optical effect based on the topology protection state provides a new way for generation of higher harmonics and generation of other nonlinear optical effects.

Description

technical field [0001] Specifically, the present invention relates to the field of nonlinear topological photonics. In particular, a device for topological boundary state regulation and harmonic frequency generation based on voltage regulation. Background technique [0002] In recent years, the proposal of optical topology has aroused strong research interest. The concept of optical topology derives from topological insulators, which are bulk-insulating, surface-conducting structures. The topological properties of this structure are determined by the bulk structure, and it has the unique property of being immune to structural impurities and defects, and has been used in many optical studies, such as laser cavities, gratings, metasurfaces, and waveguide structures. The application of topology in optics enables light to turn at any angle or transmit around obstacles, and suppresses backscattering, reduces heat loss, and greatly improves light transmission efficiency. Topolo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/35G02F1/355
CPCG02F1/353G02F1/3551
Inventor 顾兵李小雪芮光浩崔一平
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com