38 results about "Large series" patented technology

Cervical Acid Phosphatase-Papanicolaou Test Kit (CPK) is an assembly of reagents, controls and instructions for visualization of cervical acid phosphatase on smears or monolayers of cervical specimens, and for performing the CAP-PAP Test (CPT). CPT is a single-slide, double-staining method for demonstration of cervical acid phosphatase activity inside abnormal cervical cells on Papanicolaou stained smears, and a set of criteria for using this test for cervical cancer screening. In previous clinical trials this method was found to enable Pap test screeners to improve test sensitivity (detection of abnormal cells) for more than 10% (from 0.8 to 0.9), and to reduce false negative readings (missing abnormal cells) for more than 50% (from 0.1 to 0.02). Due to better accuracy and the low cost, when approved, CPT may begin to replace current technologies for cervical cancer screening. CPK is designed to meet requirements for testing large series of specimens on regular basis-the usual practice in cytopathology laboratories performing the Pap test. CPK brings consistency for staining and interpretation, makes internal and external controls easier, and improves the test accuracy for lower cost, while increases laboratory productivity for less liability.

The present application discloses a method for manufacturing a full silicide metal gate bulk silicon multi-gate fin field effect transistor, which comprises the steps of: forming at least one fin on the semiconductor substrate; forming a gate stack structure on top and side surfaces of the fin; forming a source / drain extension area in the fin on both sides of the gate stack structure; forming a source / drain area on both sides of the source / drain extension area; forming silicide on the source / drain area; forming a full silicide metal gate electrode; and forming contact and implementing metalization. The present invention eliminates the self-heating effect and the floating body effect of SOI devices, then has a much lower cost, overcomes such defects as the polysilicon gate depletion effect, Boron penetration effect, and large series resistance of polysilicon gate electrodes, and has good compatibility with the planar COMS technology, thus it can be easily integrated.

The invention provides an OLED backplane structure and a method for manufacturing the OLED backplane. The OLED backplane structure is provided with a composite electrode (5). On one hand, the materialof the contact part (51) of the composite electrode (5) in contact with a semiconductor layer (111) of a thin film transistor (11) is conductive metal oxide. While the Fermi level pinning effect between a metal and a semiconductor is reduced, a large series resistance is not caused, and the contact resistance of the metal and the semiconductor can be greatly reduced. On the other hand, an anode and a drain electrode of the thin film transistor (11) are integrated to be a whole body, the contact resistance between the anode and the drain electrode of the thin film transistor (11) is eliminated, thus the on-resistance of an OLED display can be greatly reduced, and the power consumption is reduced.

A navigational tool is provided for selection of images of interest in large series of images. Difference indices are calculated between adjacent images in the series, and the indices are used to generate a navigational tool which can be presented as a graphical representation of differences between the images. A viewer may select specific locations or sets of images for viewing by manipulation of a virtual tool based upon the representation of the difference indices. The technique thus provides a highly efficient and intuitive tool for location of images in a series where particular features of interest or changes may occur, permitting rapid access and viewing of these images.

The invention discloses a method for manufacturing an ESD gate grounded NMOS transistor. Through photoetching, the drain end and the edge of the grid electrode of the ESD transistor are in certain distance; a region (a drift region) between the drain end and the grid electrode is only provided with a lightly-doped source drain (LDD) region and no high-dosage drain adulteration; as square resistance of the LDD region is much larger relative to the high doped drain end, the method can ensure that larger series resistance is obtained under the condition of shorter length of the drift region without increasing area occupied by the transistor, thereby saving the area of the transistor; moreover, as the breakdown voltage of an LDD junction is lower than the drain end, the transistor decides the trigger voltage through the LDD junction, well achieves the aim of reducing the trigger voltage, does not need any extra ESD photoetching and ESD ion injection, thereby simplifying a process and saving cost.

A data transaction processing system receives and processes equation-based electronic data transaction request messages. Transmitting equation-based electronic data transaction request messages that represent a large series of discrete values reduces the data transmission to the data transaction processing system. Processing equation-based electronic data transaction request messages instead of a series of discrete values reduces the amount of time need to perform transactions, greatly reducing processing latency. Equation-based electronic data transaction request messages can also be efficiently updated by modifying equation parameters, again reducing the amount of data transmitted to the data transaction processing system.

The invention relates to the technical field of electronic reconnaissance, and discloses a distributed clustering method based on spatial information. The distributed clustering method comprises the following steps: constructing a distributed system with N nodes; taking any node as a central node, and receiving pulse information transmitted by other nodes in real time through a link; sorting the pulse parameters of all the nodes at the central node according to arrival time; performing combined clustering on the sorted pulses according to three parameters of pulse frequency, pulse width and pulse arrival time to form combined pulse description; carrying out time difference registration marking, wherein an obtained time difference registration marking sequence corresponds to the combined pulse description; and carrying out joint clustering on the marked joint pulses by utilizing marking information and combining pulse parameters. According to the distributed clustering method, the defects that traditional pulse clustering is poor in adaptability to complex and changeable situations such as pulse repetition interval large-series difference, jitter, pulse-to-pulse coding and modulation, and intra-pulse modulation information needs to be effectively extracted in real time are overcome, and the adaptability of the pulse clustering method is improved.

A data transaction processing system receives and processes equation-based electronic data transaction request messages. Transmitting equation-based electronic data transaction request messages that represent a large series of discrete values reduces the data transmission to the data transaction processing system. Processing equation-based electronic data transaction request messages instead of a series of discrete values reduces the amount of time need to perform transactions, greatly reducing processing latency. Equation-based electronic data transaction request messages can also be efficiently updated by modifying equation parameters, again reducing the amount of data transmitted to the data transaction processing system.

An external cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device belongs to the semiconductor photoelectron field. The common oxidation limiting vertical cavity surface transmission semiconductor laser device has problems of small single pass light gain, multiple-transverse module laser shooting, low single module output power, large threshold current and large series resistance and so on. The invention adopts the multiple-active region structure on the active region of the device, meanwhile leads the defect type photon crystal structure into DBR on the vertical cavity surface transmission semiconductor laser device, the external cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device with dozens of micrometres of single module operation oxidation bore diameter, dozens of mws of single module power, dozens of Ohms of series resistances and more than 35 dbs of side module inhibition can be obtained by optimizing the photon crystal period, the air bore diameter, the etching depth, the device diameter and the oxidation bore diameter and so on reasonably.

The invention relates to a silicon solar cell back electrode raw material, in particular, an environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste. With the environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste of the invention adopted, the problems of poor printing performance, large series resistance and low photoelectric conversion efficiency of the components of a silicon solar cell back electrode can be solved. The environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste is composed of the following components in part by weight: 50 to 58 parts of silver aluminum mixed powder, 1 to 3 parts of lead-free glass powder, 0.1 to 1 part of inorganic additive, and 39 to 48 parts of organic adhesive; the fine degree of the silver paste is smaller than 15 micron; and the viscosity of the silver paste ranges from30 to 60Pa.s. According to the environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste of the invention, irregularly-shaped silver powder and spherical aluminum powder are adopted as the base materials of the silver paste; a uniform and compact silver conductive layer is formed on the back surface of a silicon wafer in a high-temperature sintering treatment process, and excellent ohmic contact can be realized between the silver conductive layer and an aluminum back surface field as well as between the silver conductive layer and the silicon wafer; and therefore, lower series resistance and higher photoelectric conversion efficiency can be realized, and the weldability and adhesion of a back electrode can be improved, and the series resistance of a cell sheet can be small, and conversion efficiency is high.

The invention discloses a rare earth modification and ageing processing method of a high chromium-nickel alloy steel guide plate, belonging to the technical field of metallurgy. The rare earth modification and ageing processing method comprises the following steps of: enabling large blocky net primary carbides to be subjected to necking and spheroidizing through a rare earth modification process;and separating out secondary carbides after an ageing process in tiny dispersive small particles instead of a plurality of thick strips. Due to the change of size, form and amount of the primary carbides and the secondary carbides, the service life of the high chromium-nickel alloy steel guide plate is prolonged. After modification and ageing processes are carried out on the guide plate, the original fragmentation situation is largely reduced, the service life is prolonged by 43-50%, the service life of small series guide plate is prolonged to 1000 times per piece from the original average 700 times per piece, the service life of a large series guide plate is prolonged to 1500 times per piece from the original average 700 times per piece, the energy consumption per ton steel is reduced, and the production cost is saved.

A method synthesizing homoallylic or homopropargylic alcohols was developed to react aldehydes with allyl boronates, such as allylboronic acid pinacol ester, or allenylborates in the presence of a catalytic amount of a chiral binaphthyl-derived chiral phosphoric acid. The method showed enhanced enantiocontrol and chemical yield, which increased with lower temperatures. A large series of aldehydes were tested under these catalytic conditions and wide successful substrate scope was found, including aryl, heteroaryl, aromatic aldehydes, heteroaryl aldehydes, α,β-unsaturated aldehydes and aliphatic aldehydes, and alkyl aldehydes. Likewise, the use of crotyl boronates (E and Z) were successfully reacted with aryl aldehydes under the conditions to allow for highly enantio- and diasteo-selective crotylation.

The invention discloses a preparation method for a full-silicification metal gate silicon multi-gate fin field effect transistor. The preparation method comprises the steps: forming fins on a semiconductor substrate; forming gate piling structures at the top and on the side surfaces of the fins; forming source / drain extension area structures in the fins at two sides of the gate piling structures; forming source / drain structures at two sides of the source / drain extension areas; carrying out source / drain silicification; forming full-silicification metal gate electrodes; and contacting and metalizing. According to the preparation method, self-heating effect and floating body effect of SOI (Silicon-On-Insulator) device can be eliminated, and lower cost can be realized; the defects of polycrystalline silicon depletion effect, boron penetration effect, large series resistance and the like can be overcome; and the full-silicification metal gate silicon multi-gate fin field effect transistor can be well compatible with CMOS (Complementary Metal-Oxide-Semiconductor Transistor) plane process, thus being easy to integrate.

The present invention provides a series compensation platform hydraulic installation system with a level adjustment function. The system comprises: a bearing structure comprising two gate type frames, wherein each gate type frame comprises a connection section, lifting sections and two tower frames fixed on bases, one connection section is installed between the two tower frames, and one lifting section is installed on a side of each tower frame, wherein the side of each tower frame is relative to the connection section; a steel rope type hydraulic lifting apparatus, wherein the steel rope type hydraulic lifting apparatus is connected with the bearing structure, and is provided for carrying out lifting operation on the series compensation platform; an insulator installation apparatus, wherein the insulator installation apparatus is arranged below the series compensation platform, and is provided for lifting the insulator; and level adjustment mechanisms, wherein the level adjustment mechanism is provided for carrying out level adjustment on the series compensation platform. With the present invention, lifting and lowering of the series compensation platform by the system provide advantages of stability, less impact, flexible position adjustment, safety, reliability, and the like; jamming phenomenon of the level adjustment mechanism and the series compensation platform during adjustment of the level position of the series compensation platform can be avoided; and the system can be used for installation constructions of various types of series compensation platforms (especially high-voltage level large series compensation platforms).

The invention aims to disclose a heterojunction back-contact solar cell and a fabrication method thereof. The heterojunction back-contact solar cell comprises an N-type single-crystal silicon matrix,wherein a front surface P+ doping layer and an anti-reflection layer are sequentially arranged on a front surface of the N-type single-crystal silicon matrix, an intrinsic amorphous silicon layer is arranged on a back surface of the N-type single-crystal silicon matrix, an N-type amorphous silicon doping layer and a P-type amorphous silicon doping layer are arranged on a back surface of the intrinsic amorphous silicon layer, an insulation isolation layer is arranged between the N-type amorphous silicon doping layer and the P-type amorphous silicon doping layer, the N-type amorphous silicon doping layer is connected with a negative electrode by a TCO layer, and the P-type amorphous silicon doping layer is connected with a positive electrode by the TCO layer. Compared with the prior art, theprocess difficulty is reduced, the amorphous silicon equivalent passivation effect is achieved, the carrier surface recombination is reduced, the size proportion of a back-surface emitter to a back-surface field of the cell is changed, and the problem of relatively large series resistance of minority carrier and majority carrier during the transmission process is prevented.

A wall-mounted air purifier and an air purifying system are provided. The wall-mounted air purifier is small in size and is greatly reduced in cost, can achieve air circulation among at least two spaces and also has a purifying effect of removing PM2.5 with a standard of 0.1-0.5 [mu]m level being reached. The air purifier is hung on wall, wherein an air inlet of a centrifugal fan assembly is communicated with a through hole in the wall. The through hole is connected to outdoor new air or a neighboring room. A filter module assembly surrounds the centrifugal fan assembly and includes a high-effectively filter module filled with a filter core material in H11, H13 or H14 grade. An air outlet is arranged at the side which is in parallel with the axial line of the shell and the centrifugal fan assembly to form a sealed space between the air outlet and the filter module assembly. The air purifier can be mounted in each room so that air in rooms can be circulated in a large-series loop. The air purifier can supply new air and can achieve air purification, thereby achieving a healthy and environmental-protective concept of future living environment.

The invention relates to a method for sewing a business wear sleeve meeting bending degree of a human body elbow. The method comprises the following steps of cutting a large sleeve sheet and a small sleeve sheet, determining sewing points of sleeve bottoms, and determining sewing point of sleeve exteriors; sewing bottom seams of the large sleeve sheet and the small sleeve sheet, and then sewing sleeve exterior seams of the large sleeve sheet and the small sleeve sheet. The method has the advantages that the manufactured finished sleeve has certain back tension, the sleeve inwards forms a natural arch shape, the stereo feel is realized, the bending degree of the human body elbow is met, and the wearing is comfortable; the operation is simple, the one-time forming is realized, the repeated ironing and arrangement are not needed, the time and labor are saved, the quality of a product is improved, the method can be widely applied to the production of high-grade customizing clothes and various suits, can also be applied to large series of clothes, such as military uniforms, industrial clothes and foreign trade products, and is also suitable for enterprises to popularize and apply.

The invention belongs to the photovoltaic technological field and relates to solar cell front surface electrode paste. The paste comprises the following components by weight percentage: 83.8 to 95 parts of silver powder; 1 to 5 parts of glass powder; 8 to 15 parts of organic carrier; and 0.2 to 2 parts of functional additive. With the paste adopted, the technical problems of narrow process openings, large series resistance and low photoelectric conversion efficiency of crystalline silicon solar cells in the prior art can be solved.

The invention provides an intelligent flexible assembly line comprising a first assembly line, a second assembly line and a third assembly line. The first assembly line comprises a first bracket and aconveying roller arranged on the first bracket, the second assembly line and the first assembly line are oppositely arranged side by side, the second assembly line comprises a second bracket and a conveying roller arranged on the second bracket, the first bracket and the second bracket are each provided a transfer device so ad to be folded to the third assembly line, and the transfer devices areprovided with bull eye balls; and the third assembly line is arranged between the first assembly line and the second assembly line, the third assembly line includes a third bracket and a conveying roller arranged on the third bracket, the open end of the third bracket is connected to the tail ends of the first bracket and the second bracket, the third bracket comprises a third upper-layer bracketand a third lower-layer bracket, and the first bracket, the second bracket and the third bracket are provided with assembly stations. By means of the technical scheme, the assembly line can be used for assembling large-series products and can be used for assembling multiple sub-products under the large-series products.

The invention discloses a four-axis tandem ultra-large pipe cutting robot, which includes a gun pendulum mechanism, a radius arm mechanism, a telescopic arm mechanism and a lifting arm mechanism, and is characterized in that the gun pendulum mechanism is located on the upper side of the radius arm mechanism and close to the workpiece side, the torch can swing at a certain angle in the horizontal direction; the radius arm mechanism is fixedly connected with the torch swing mechanism through bolts, and its track axis is perpendicular to the axis of the workpiece, and the torch can be controlled to move away from or close to the workpiece through its movement; the telescopic The arm mechanism is fixedly connected with the radius arm mechanism through bolts and is located on the side away from the gun pendulum mechanism, and its track axis is parallel to the workpiece axis; the lifting arm mechanism is fixed with the telescopic arm mechanism through bolts, and its track axis is perpendicular to the workpiece axis , with rollers installed under it, which can move on the ground.

The embodiment of the invention discloses a method for sintering a solar battery cell, comprising the following steps of: screening out a batter cell with larger series resistance in the solar battery cells after being sintered through a silk screen; and sintering the screened battery cell again in order to decrease series resistance of the screened battery cell, wherein the temperature of the secondary sintering is lower than normal sintering temperature. In the method provided by the embodiment of the invention, by screening out the batter cell with the larger series resistance and sintering the screened battery cell again, the defects of the screened battery cell are the sintering defects of the battery cell caused by the disturbance of gas atmosphere in a sintering furnace in the sintering process, the sintering defects also cause low conversion efficiency, the screened battery cell is sintered again at the temperature lower than the normal sintering temperature, and a smooth and uniformly distributed Al-Si alloy layer can be arranged on the surface of a back surface filed in order to compensate for local or large-scale sintering shortage of the back surface field in normal sintering process; therefore, the series resistance of the battery cell is decreased, the conversion efficiency of a crystalline silicon solar battery cell, and the economic benefit is improved.

Molded foam bodies made of silicone can be produced in large series by means of known injection molding machines for liquid silicone by virtue of the fact that mixtures of ammonium carbonate, and / or ammonium carbaminate, and / or ammonium hydrogen carbonate, in powdered form, and at least one of the two liquid-paste-like components of liquid silicone are produced and the two liquid silicone components are then processed in the known manner, with the proviso that the mold is not completely filled with the dispersion.

The invention belongs to the technical fields of semiconductor light-emitting devices and manufacturing methods thereof and in particular relates to a plurality of kinds of p-type ZnO and n-type GaN combined ZnO-based light-emitting devices and manufacturing methods thereof. One device comprises a substrate, a GaN epitaxial layer, a current lower limiting layer, a lower electrode, a ZnO-based light-emitting layer and an upper electrode, wherein the GaN epitaxial layer epitaxially grows on the substrate; the current lower limiting layer and the lower electrode are manufactured on the epitaxiallayer in a mutually discrete way; the ZnO-based light-emitting layer is manufactured on the current lower limiting layer; and the upper electrode is manufactured on the ZnO-based light-emitting layer; and more particularly, the GaN epitaxial layer is an n-type GaN film, the current lower limiting layer is an n-type AlGaN / Ga2O3 film, and the ZnO-based light-emitting layer is a p-type ZnO-based film. The invention also relates to a ZnO-based light-emitting device with the current lower limiting layer and a ZnO-based light-emitting device with a current upper limiting layer. By means of the p-type ZnO and n-type GaN combined ZnO-based light-emitting devices and the manufacturing methods thereof disclosed by the invention, the defects, such as lower concentration of a p-type GaN epitaxial carrier, large series resistance of the device, high working voltage of the device, and low output power of the device are overcome, and the application range of the devices is further broadened.

The invention provides a method for synthesizing a three-dimensional ordered double mesoporous SBA‑15 material with adjustable larger mesopore content and highly polymerized pore walls, using a single surfactant polyoxyethylene‑polyoxypropylene‑polyoxyethylene P123 As a template, tetraethyl orthosilicate and inorganic salts are added at the same time. After hydrothermal reaction by adjusting different reaction temperatures and reaction times between 180-220°C, they are calcined at 550°C to obtain a series of large mesopores with adjustable content. A three-dimensional ordered double mesoporous SBA‑15 material with highly aggregated pore walls. By controlling the temperature of high-temperature crystallization and adding inorganic salts, the present invention realizes the synthesis of a series of three-dimensional ordered double mesoporous SBA‑15 materials with adjustable large mesopore content and highly polymerized pore walls. Polymerization, high stability.

The invention discloses a method for processing large series resistance of a crystalline silicon solar cell. The method for processing the large series resistance of the crystalline silicon solar cell includes that using a chemical method to process the surface of the crystalline silicon solar cell with large series resistance (Rs) to lower the contact resistance between positive silver paste and a silicon wafer of the cell with large series resistance so as to restore the series resistance (Rs) of the cell to a normal level, and the conversion efficiency is restored to a normal level.

An adjustable guide rail assembly (16) for a conveyor system includes an adjustable guide member (32) having a face extending between opposite sides, a large radius face segment and a small radius face segment. The large radius face segment and the small radius face segment extend transversely between the adjustable guide members (32) and each define an arcuate guide path for the three-dimensional article. The radius of the arcuate guide path is changed by rotating the adjustable guide member from a large article configuration in which a large radius face segment with a larger radius defines the arcuate guide path to a smaller radius face segment with a smaller radius. Small article configuration with curved guide paths.

The invention discloses a novel Cu2ZnSnS4 schottky diode structure and a preparation method thereof. The Cu2ZnSnS4 schottky diode structure comprises a substrate, a bottom metal electrode layer, a Cu2ZnSnS4 thin layer and a top metal electrode layer, wherein the bottom metal electrode layer, the Cu2ZnSnS4 thin layer and the top metal electrode layer are deposited on the substrate in sequence from bottom to top. According to the Cu2ZnSnS4 schottky diode provided by the invention, large series resistance in the device structure can be avoided, so that the ideal factor of the schottky diode can be optimized, and further, the cut-off frequency of the device is favorably improved, as a result, the structure is applicable to high frequency circuits; the schottky diode structure has the advantages of abundant raw material sources, low price, strong radiation resistance and antidamping capability, good stability, relatively diversified deposition methods and high selectivity in substrates, so that the device is flexible in structural design and the preparation technology is simple, as a result, the diode structure has a wide application prospect.