Preparation method for full-silicification metal gate silicon multi-gate fin field effect transistor
A technology of fully silicided metal gates and field effect transistors, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of floating body effect and self-heating effect, poor heat dissipation, and high manufacturing cost, and achieve the goal of overcoming self- Heating effect and floating body effect, good compatibility, and the effect of reducing preparation cost
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[0030] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are illustrative only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.
[0031] A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, sizes, and relative positions can...
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