OLED backplane structure and method for OLED backplane

Abstract

The invention provides an OLED backplane structure and a method for manufacturing the OLED backplane. The OLED backplane structure is provided with a composite electrode (5). On one hand, the materialof the contact part (51) of the composite electrode (5) in contact with a semiconductor layer (111) of a thin film transistor (11) is conductive metal oxide. While the Fermi level pinning effect between a metal and a semiconductor is reduced, a large series resistance is not caused, and the contact resistance of the metal and the semiconductor can be greatly reduced. On the other hand, an anode and a drain electrode of the thin film transistor (11) are integrated to be a whole body, the contact resistance between the anode and the drain electrode of the thin film transistor (11) is eliminated, thus the on-resistance of an OLED display can be greatly reduced, and the power consumption is reduced.

Description

technical field [0001] The invention relates to the field of OLED display technology, in particular to an OLED backplane structure and a method for manufacturing the OLED backplane. Background technique [0002] In the field of display technology, flat panel display technologies such as Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED) have gradually replaced CRT displays. Among them, OLED displays have many advantages such as self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide operating temperature range, flexible display and large-area full-color display, etc. It is recognized by the industry as the most promising display device. [0003] OLED backplane is an important part of OLED display. OLED backplanes typically include: [0004] An array substrate, the array substrate is provided with a plurality of thin film transistors (Thin Film Transistor, TFT) ar...

AI Technical Summary

Problems solved by technology

The superposition of these two types of contact resistance will lead to a larger on-resistance of the OLED display, so that the energy consumption of the OLED display is higher

[0010] Reducing the on-resistance is a key factor for reducing the energy consumption of OLED displays. One of the existing methods for reducing the on-resistance of OLED displays is to make a contact between the source 104 and the semiconductor layer 101 and between the drain 105 and the semiconductor layer 101. Add a certain thickness of insulating non-metal oxide dielectric layer, such as silicon oxide (SiOx), silicon nitride (SiNx), etc., to form a metal-interfacial layer-semiconductor structure (Metal-Interfacial layer-Semiconductor, MIS), to Reduce the Fermi level pinning effect, but the insulation of the dielectric layer will cause the dielectric layer itself to cause additional resistance in series; the second is to perform metal annealing after the anode 300 is fabricated to release the stress of the materials of each structural layer, so as to Reduce the contact resistance between the anode 300 and the drain 105 of the TFT 10, but the effect is limited

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