465 results about "Germanium oxide" patented technology

Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of NO activation of an oxide surface. Once activated, a fluorine-containing gas or vapor etches the activated surface. Etching is self-limiting as once the activated surface is removed, etching stops since the fluorine species does not spontaneously react with the un-activated oxide surface. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where accurate removal of one or multiple atomic layers of material is desired.

Methods are disclosed of making linear and cross-linked, HMW (high molecular weight) polysilanes and polygermanes, polyperhydrosilanes and polyperhydrogermanes, functional liquids containing the same, and methods of using the liquids in a range of desirable applications. The silane and germane polymers are generally composed of chains of Si and/or Ge substituted with R′ substituents, where each instance of R′ is, for example, independently hydrogen, halogen, alkenyl, alkynyl, hydrocarbyl, aromatic hydrocarbyl, heterocyclic aromatic hydrocarbyl, SiR″₃, GeR″₃, PR″₂, OR″, NR″₂, or SR″; where each instance of R″ is independently hydrogen or hydrocarbyl. The cross-linked polymers can be synthesized by dehalogenative coupling or dehydrocoupling. The linear polymers can be synthesized by ring-opening polymerization. The polymers can be further modified by halogenation and/or reaction with the source of hydride to furnish perhydrosilane and perhydrogermane polymers, which are used in liquid ink formulations. The synthesis allows for tuning of the liquid properties (e.g., viscosity, volatility, and surface tension). The liquids can be used for deposition of films and bodies by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation. The deposited films can be converted into amorphous and polycrystalline silicon or germanium, and silicon or germanium oxide or nitride by curing at 400-600 DEG C. and (optionally) laser- or heat-induced crystallization (and/or dopant activation, when dopant is present).

A process for the reduction of oxides in a gas stream (e.g., automotive exhaust) uses a catalyst comprising a molecular sieve having the CHA crystal structure and having a mole ratio of greater than 50 to 1500 of (1) an oxide selected from silicon oxide, germanium oxide or mixtures thereof to (2) an oxide selected from aluminum oxide, iron oxide, titanium oxide, gallium oxide or mixtures thereof.

An object of the invention is to achieve an organic EL device which has an extended life, weather resistance, high stability, and high efficiency, and is inexpensive as well. This object is accomplished by the provision of an organic EL device comprising a substrate, a pair of a hole injecting electrode and a cathode formed on the substrate, and an organic layer located between these electrodes and taking part in at least a light emission function, wherein between the organic layer and the cathode there is provided an inorganic insulating electron injecting and transporting layer comprising a first component comprising at least one oxide selected from the group consisting of lithium oxide, rubidium oxide, potassium oxide, sodium oxide and cesium oxide, a second component comprising at least one oxide selected from the group consisting of strontium oxide, magnesium oxide and calcium oxide, and a third component comprising silicon oxide and/or germanium oxide.

The invention relates to a Ge-doped AZO target, comprising 1-10% of alumina and 0.1-5% of germanium oxide and the balance zinc oxide by weight percentage. The invention also provides a preparation method of the Ge-doped AZO target, including the steps: S1, the raw material of zinc oxide, alumina and germanium oxide powder is weighed respectively in preset proportion, binding agent is added, and water is added for even mixing; S2, the mixture is dried, and the powder is formed by pressing to form a blank body with preset shape and strength; S3, the blank body is sintered at normal pressure and normal atmosphere with the sintering temperature of 1200-1600 DEG C. Transparent conductive film prepared by adopting the target provided by the invention has the characteristics of high light transmittance, low resistance, good film adhesive power, complete and compact structure and good stability.

A silicate optical fiber comprises a graded index silicate core co-doped with aluminum oxide, phosphorus oxide, germanium oxide and fluorine in unique compositions that we have discovered allow multimode, multi-wavelength operation without significant intermodal dispersion. Illustratively, the core comprises a multiplicity of compositions whose refractive indices are graded from a maximum at or near the center of the core to a minimum at the interface with the cladding. Each core composition resides within a sub-volume of a 5 dimensional phase space in which an optimum core profile shape is essentially constant over the wavelength range of operation of the fiber. For operation in the wavelength range of about 0.78 μm to 1.55 μm, each composition preferably comprises no more than approximately 6 mole % Al₂O₃, 9 mole % P₂O₅, 6 mole % GeO2, 6 mole % F, and 90-100 mole % SiO₂.

The embodiments of the present invention provide a Ge-based NMOS device structure and a method for fabricating the same. By using the method, double dielectric layers of germanium oxide (GeO₂) and metal oxide are deposited between the source/drain region and the substrate. The present invention not only reduces the electron Schottky barrier height of metal/Ge contact, but also improves the current switching ratio of the Ge-based Schottky and therefore, it will improve the performance of the Ge-based Schottky NMOS transistor. In addition, the fabrication process is very easy and completely compatible with the silicon CMOS process. As compared with conventional fabrication method, the Ge-based NMOS device structure and the fabrication method in the present invention can easily and effectively improve the performance of the Ge-based Schottky NMOS transistor.

Gasses are separated using a molecular sieve having the CHA crystal structure and having a mole ratio of greater than 50 to 1500 of (1) an oxide selected from silicon oxide, germanium oxide or mixtures thereof to (2) an oxide selected from aluminum oxide, iron oxide, titanium oxide, gallium oxide or mixtures thereof.

An optically active glass containing bismuth oxide and germanium oxide is disclosed which comprises 0.1 up to less than 5 mol-% of B₂O₃ and SiO₂ in total. In addition the glass comprises 10 to 60 mol-% of Bi₂O₃ and 10 to 60 mol-% of GeO₂. The glass may further comprise 0-15 wt-% of rare earths, 0-30 wt-% of M′₂O, 0-20 wt-% of M″O, 0-15 wt-% of La₂O₃, 0-40 wt-% of Ga₂O₃, 0-10 wt-% of Gd₂O₃, 0-20 wt-% of Al₂O₃, 0-10 wt-% of CeO₂, 0-30 wt-% of ZnO, wherein M′ is at least one component selected from the group formed by Li, Na, K, Rb and Cs, and wherein M″ is at least one component selected from the group formed by of Be, Mg, Ca, Sr and Ba. Also a suitable method of preparation is disclosed.

The invention discloses a far-infrared negative-ion ceramic. The ceramic comprises the following components by weight: 0.1 to 0.18 part of magnesium oxide, 0.2 to 0.29 part of calcium oxide, 1.80 to 2.78 parts of potassium oxide, 22 to 25 parts of aluminium oxide, 71 to 72.4 parts of silicon dioxide, 0.23 to 0.28 part of sodium oxide, 0.1 to 0.13 part of ferric oxide, 1 to 3 parts of tourmaline and 1 to 3 parts of germanium oxide. The invention also provides a manufacturing method for the far-infrared negative-ion ceramic by using the above-mentioned components; and the far-infrared negative-ion ceramic has the advantages of mildness, beautiful appearance, and comprehensive functions of emitting far infrared wave and releasing negative ions.

A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds such as germanium oxide (GeO₂) and boron oxide (B₂O₃). Hot water can be used in processing to wet etch the film, thereby removing the porogens and providing the porous dielectric film. The silicon based dielectric film may be a carbon doped silicon oxide in order to further reduce the dielectric constant of the film. Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film.

The invention discloses a hydrothermal preparation method of rod-like zinc germanate with an adjustable size. The hydrothermal preparation method comprises the following steps: (1) preparing a precursor: mixing sodium carbonate and germanium oxide solid powder at the mol ratio of 1 to 1; calcining under the condition that the temperature is 700 DEG C to 1000 DEG C for 8h to 24h to prepare sodium germanate solid powder; (2) taking the sodium germanate as a germanium source and adding amino acid into a sodium germanate solution, wherein the adding mol ratio of the sodium germanate to the amino acid is 1 to (0.5 to 5); uniformly stirring a mixed solution under the condition of 40 DEG C to 80 DEG C; (3) adding a zinc acetate solution into the mixed solution of the step (2), wherein the adding mol ratio of zinc acetate to the sodium germanate is 1 to 1; loading the mixed solution into a reaction kettle and carrying out a hydrothermal reaction for 3h to 12h under the condition that the temperature is 120 DEG C to 200 DEG C; washing a product with water until the product is neutral; drying under reduced pressure, and grinding to prepare the rod-like zinc germanate. The hydrothermal preparation method is simple and convenient to operate; a sodium germanate nano-rod has an adjustable size, can be synthesized in a large batch and is low in cost.

A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying insulation requires digging trenches in the insulation, and then filling the trenches with metal to form the wires. The invention provides a new “trench-less” or “self-planarizing” method of making coplanar metal wires. Specifically, one embodiment forms a first layer that includes silicon and germanium; oxidizes a region of the first layer to define an oxidized region and a non-oxidized region; and reacts aluminum or an aluminum alloy with the non-oxidized region. The reaction substitutes, or replaces, the non-oxidized region with aluminum to form a metallic wire coplanar with the first layer. Another step removes germanium oxide from the oxidized region to form a porous insulation having a very low dielectric constant, thereby reducing capacitance.

Germanium field effect transistors and methods of fabricating them are described. In one embodiment, the method includes forming a germanium oxide layer over a substrate and forming a metal oxide layer over the germanium oxide layer. The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer. A first electrode layer is deposited over the first dielectric layer.

In some embodiments, a method for integrated circuit fabrication includes removing oxide material from a surface of a substrate, where the surface includes silicon and germanium. Removing the oxide material includes depositing a halogen-containing pre-clean material on a silicon oxide-containing surface and sublimating a portion of the halogen-containing pre-clean material to expose the silicon on the surface. A passivation film is deposited on the exposed silicon. The passivation film may include chlorine. The passivation film may prevent contamination of the silicon surface by chemical species from the later sublimation, which may be at a higher temperature than the earlier sublimation. Subsequently, a remaining portion of the halogen-containing pre-clean material and the passivation film are sublimated. A target material, such as a conductive material, may subsequently be deposited on the substrate surface.