The invention discloses a preparation method for organosilicone high temperature resisting
black iron oxide, wherein the
black iron oxide is prepared by adopting the
sodium hydroxide oxidation method, and the preparation method comprises the following steps: a
black iron oxide filter cake, which is not
kiln dried, is directly used;
ethanol solution, the weight of which is 2-3% of that of the black
iron oxide filter cake, and silica sand, the weight of which is 1-2% of that of the black
iron oxide filter cake, are added; the mixture is ground for 15-20 minutes at the speed of 1500-2500 rpm; the
powder is taken out and dried, appropriate water is added, pulping is performed for 20-25 minutes, and seriflux with the concentration of 55-60% is prepared; methyl triethoxy
silane, the weight of which is 4-6% of that of the seriflux, dimethyl dioxethyl
silane, the weight of which is 2-3% of that of the seriflux, phenyl triethoxy
silane, the weight of which is 5-8% of that of the seriflux, and hollow floating beads, the weight of which is 0.3-0.4% of that of the seriflux, are added, and the mixture is heated in water bath to 60-70 DEG C and stirred for 2-3 hours; a
colloid mill is utilized to
grind the seriflux until the grain size is less than 40 Mum; filtering,
drying and powdering are performed, and the finished product is generated. The black
iron oxide, disclosed by the invention, has superior high temperature resisting property and can bear the high temperature of 500-600 DEG C.