The invention discloses a preparation method of a MoS2 / MoSe2
heterojunction thin film, and relates to the field of
semiconductor thin film preparation technologies and
new energy development. The preparation method comprises the following steps: (1) preparing a reaction precursor solution, namely adding a reducing
reagent into a
solvent, and stirring till that the reducing
reagent is dissolved; after dissolving, sequentially adding a
sulfur source, a
molybdenum source and a
selenium source, stirring until dissolving, and uniformly mixing to obtain a reaction precursor solution; (2) carrying out early-stage surface treatment on the substrate, namely
cutting the substrate, carrying out ultrasonic cleaning after
cutting, soaking and cleaning, and carrying out
drying treatment after cleaning; (3) carrying out
solvothermal reaction: enabling the substrate subjected to early-stage surface treatment in the step (2) to be in contact with the reaction precursor solution obtained in the step (1), and carrying out
solvothermal reaction to obtain a substrate deposited with a MoS2 / MoSe2
heterojunction thin film; and (4) cleaning the substrate deposited with the MoS2 / MoSe2
heterojunction thin film obtained in the step (3), and carrying out
vacuum drying to obtain the MoS2 / MoSe2 heterojunction thin film.