Indium sulfide/graphene composite film, and preparation method and application thereof

A graphene composite, indium sulfide technology, applied in chemical instruments and methods, chemical/physical processes, electrochemical generators, etc., can solve the problems of indium sulfide thin film limitation, long reaction time, high solvent toxicity, etc. Chemical properties, low cost, and the effect of improving electrical conductivity

Inactive Publication Date: 2019-05-31
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although indium sulfide is a semiconductor material with excellent catalytic and photoelectric conversion properties, the application of indium sulfide thin films in photoelectrocatalysis is greatly limited due to its poor conductivity.
The existing method for preparing indium sulfide composite thin film materials is complex, the reaction time is long, and the solvent is highly toxic, which is a difficulty in preparing indium sulfide composite thin films

Method used

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  • Indium sulfide/graphene composite film, and preparation method and application thereof
  • Indium sulfide/graphene composite film, and preparation method and application thereof
  • Indium sulfide/graphene composite film, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. Prepare 40 ml of ethyl cellulose ethanol solution with a mass fraction of 10 wt%, and then add 10 g of terpineol. Then add the prepared 0.1g graphene powder. Stir magnetically for 2h. Stir again and evaporate absolute ethanol to dryness. Then add 0.6ml acetylacetone and 0.6ml OP emulsifier and stir evenly to obtain graphene slurry.

[0030] 2. Use the spin coating method to coat the graphene slurry on the cleaned FTO glass conductive surface, and place it in a blast drying oven at 80°C for 20 minutes for pretreatment. Then repeat the above steps to print 6 times, and the printed graphene paste is finally sintered in a muffle furnace at 300°C at different temperatures;

[0031] 3. Add 0.1mmol of indium chloride and 0.1mmol of thiourea to 60ml of ethylene glycol in turn, and magnetically stir until fully dissolved to obtain a reaction precursor solution;

[0032] 4. Put the FTO conductive glass prepared with the graphene film into a three-necked flask with the cond...

Embodiment 2

[0034] 1. Prepare 40 ml of ethyl cellulose ethanol solution with a mass fraction of 10 wt%, and then add 10 g of terpineol. Then add the prepared 0.1g graphene powder. Stir magnetically for 2h. Stir again and evaporate absolute ethanol to dryness. Then add 0.6ml acetylacetone and 0.6ml OP emulsifier and stir evenly to obtain graphene slurry.

[0035] 2. Use the screen printing method to print graphene paste on the cleaned conductive surface of FTO glass, and place it in a blast drying oven at 120°C for 20 minutes for pretreatment. Then repeat the above steps to print 6 times, and the printed graphene paste is finally sintered in a muffle furnace at 400°C at different temperatures;

[0036] 5. Add 0.5mmol of indium chloride and 0.5mmol of thiourea to 60ml of ethylene glycol in sequence, then add 0.25g of PVP, and magnetically stir until fully dissolved to obtain a reaction precursor solution;

[0037] 6. Put the FTO conductive glass prepared with the graphene film into a th...

Embodiment 3

[0040] 1. Prepare 40 ml of ethyl cellulose ethanol solution with a mass fraction of 10 wt%, and then add 10 g of terpineol. Then add the prepared 0.2g graphene powder, magnetically stir for 4h, then stir and evaporate absolute ethanol to dryness, then add 0.6ml acetylacetone and 0.6ml OP emulsifier and stir evenly to obtain graphene slurry.

[0041] 2. Use the screen printing method to print graphene paste on the cleaned conductive surface of FTO glass, and place it in a blast drying oven for pretreatment at 100°C for 20 minutes. Then repeat the above steps and print 6 times. The printed graphene paste is finally sintered in a muffle furnace at 350°C at different temperatures;

[0042] 3. Add 0.2mmol of indium chloride and 0.2mmol of thiourea to 60ml of ethylene glycol in sequence, then add 0.25mmol of PVP, and magnetically stir until fully dissolved to obtain a reaction precursor solution;

[0043] 4. Put the FTO conductive glass prepared with the graphene film into a three...

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PUM

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Abstract

The invention belongs to the technical field of composite semiconductor thin films and discloses an indium sulfide (In2S3) / graphene composite film, and a preparation method and application thereof. The In2S3 / graphene composite film is prepared by adding indium chloride, thiourea and polyvinylpyrrolidone to ethylene glycol to form a reaction precursor liquid, and subjecting a FTO conductive glass substrate spin-coated with graphene paste to a microwave hydrothermal reaction in a microwave oven at the power of 700 to 900W and at the temperature of 180 to 220 degrees centigrade. The In2S3 / graphene composite film has a uniform phase, good crystallization and high purity. The method uses a microwave assisted solution for synthesizing the nanometer In2S and graphene composite film, just requiressimple equipment and preparation processes, is low in cost and fast in speed, shortens the reaction time, and uses non-toxic and safe preparation reagents.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin films, and more specifically relates to an indium sulfide / graphene composite thin film and its preparation method and application. Background technique [0002] Indium sulfide (In 2 S 3 ) is an n-type semiconductor, which is a typical III-VI group sulfide and has a wide band gap. In 2 S 3 It has excellent properties such as optical properties, optoelectronic properties, acoustic properties, electronic properties, etc. Although indium sulfide is a semiconductor material with excellent catalytic and photoelectric conversion properties, the application of indium sulfide thin films in photoelectrocatalysis is greatly limited due to its poor conductivity. The existing method for preparing the indium sulfide composite thin film material is complicated, the reaction time is long, and the solvent is highly toxic, which is a difficulty in preparing the indium sulfide composite thin film. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01M4/36H01M4/58H01M4/62H01M10/0525B01J27/04
CPCY02E60/10
Inventor 陈梦诗
Owner GUANGDONG UNIV OF TECH
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