33results about How to "Seebeck coefficient is high" patented technology

The invention relates to a preparation method of a boron-doped p type carbon nanotube with a high seebeck coefficient. The preparation method comprises the following steps: carrying out boron doping onto the carbon nanotube under a high temperature by using B2O3 as a boron source, wherein atoms B in B2O3 and atoms C in the carbon nanotube generate the following replacement reaction: XB2O3<+>(2+3x) C (nanotubes) to 2BxC (nanotubes)+3xCO; and then, washing, filtering and drying to obtain the boron-doped carbon nanotube (BxC). Percentage of atoms B in the boron-doped carbon nanotube (BxC) can be remarkably increased by increasing a ratio of a reactant B2O3 to the carbon nanotube, and maximum value of x can reach 0.1. According to the preparation method disclosed by the invention, reaction steps are simple and controllable, thermo-electric effect of the boron-doped carbon nanotube is remarkably strengthened and seebeck coefficient is greatly increased; moreover, the greater the x value is, the more obvious the improved seebeck coefficient is. Internal current carriers of the prepared boron-doped carbon nanotube focus on p type current carriers, so that the seebeck coefficient can reach up to 24.05 mu V / K which is increased by about 35% in comparison with that of the original carbon nanotube. The boron-doped carbon nanotube prepared by the method disclosed by the invention can be widely applied to a novel thermoelectric energy material based on temperature difference power generation.

The invention discloses an n-type PbSe-PbS-based thermoelectric material and a preparation method thereof. The preparation method of the present invention comprises the following steps: firstly take Pb particles, Se powder, S powder and Cu powder and mix uniformly; then package the mixed sample in a vacuum quartz glass tube; then place the quartz tube in a vertical tube furnace for sintering ; Finally, the obtained ingot is ground into a fine powder, and then vacuum hot-pressed and sintered into a regular block. The n-type thermoelectric material prepared by the invention has very high thermoelectric performance, and its thermoelectric figure of merit is as high as 1.74. The present invention improves the thermoelectric properties of n-type PbSe-PbS-based thermoelectric materials through batching process, melting and casting process, and sintering process, and prepares novel n-type PbSe-PbS-based thermoelectric materials with ideal thermoelectric conversion efficiency for the future realization of no-transmission parts, Noiseless, pollution-free, reliable and stable thermal energy conversion is the foundation. The method of the invention has simple process, easy control and low cost.

The invention relates to a high-performance PEDOT-tellurium nanoparticle composite film and a preparation method thereof. The composite film comprises: a PEDOT film and tellurium nanoparticles uniformly distributed in the PEDOT film, and the particle diameter of the tellurium nanoparticles is 2-300nm , the content of tellurium nanoparticles is 1.1wt%-33.9wt%. The invention can effectively improve the Seebeck coefficient of the material under the extremely low addition amount of tellurium element.

The invention discloses a preparation method of a thermoelectric power generation material, which relates to a preparation method of a thermoelectric material. The invention aims to solve the problems of high thermal conductivity, low electrical conductivity and low thermoelectric conversion efficiency of existing bismuth telluride thermoelectric power generation materials. Methods: 1. weighing; 2. ball milling; 3. heat treatment; 4. hot pressing sintering. The invention is used for the preparation of thermoelectric power generation materials.

The invention belongs to the technical field of new energy, and more specifically relates to a high Seebeck coefficient water system thermochemical battery and a device. The water-based electrolyte of the water-based thermochemical battery includes a redox pair aqueous solution and an organic small molecule additive, and the organic small molecule additive is dispersed in the redox pair aqueous solution; the organic small molecule additive is a guanidinium salt derivative and / or Amino derivatives, high Seebeck coefficient electrolytes are obtained by adding one or more of the above-mentioned small organic molecules to the redox couple aqueous solution. Changing the type and concentration of small organic molecules can regulate the Seebeck coefficient and output performance of the aqueous thermochemical battery.

The present disclosure relates to skutterudite thermoelectric materials of hole- compensated type and method of making the same, providing a skutterudite thermoelectric material of hole-compensated type having a composition represented by the following formula RyA4-xBxSb12 / z NC, where 0.01 = x =0.5, 0.01 = y =1, 0% = z = 10%; R is at least one element selected from the group consisting of Ca, Ba, La, Ce, Pr, Nd and Yb; A is at least one element selected from the group consisting of Fe, Co and Ni; B is at least one transition metal element selected from the group consisting of Ti, V, Cr, Mn, Fe Nb, Mo, Tc and Ru such that element(s) B have fewer electrons than element(s) A; and NC is a second phase where z is a mole percentage of the second phase in the thermoelectric material. Also disclosed are methods of making a skutterudite thermoelectric material of hole-compensated type.

The invention discloses a terahertz detector based on a multilayer-single-layer graphene junction and a preparation method thereof. Conductive channels in the detector are composed of multilayer-single-layer graphene junctions connected with one another; the multilayer-single-layer graphene junction is an effective sensitive area for terahertz wave detection; under the irradiation of terahertz waves, the photo-thermo-electric effect electromotive force of the multilayer graphene is greater than that of the single-layer graphene, so that a combined photo-thermo-electric effect electromotive force dominated by the multilayer graphene is formed; the combined photo-thermo-electric effect electromotive force is output in a circuit in a voltage or current mode to finally obtain terahertz wave response. In addition, the combined photo-thermo-electric effect electromotive force is regulated and controlled through a gate piezoelectric field, and the responsivity and the sensitivity of the detector can be further improved. Compared with the prior art, by combining the respective advantages of the single-layer graphene and the multi-layer graphene, the responsivity of the detector can be effectively improved, so that terahertz detection with high response speed and high responsivity is realized at room temperature.

The invention discloses a method for preparing an organic composite film and a method for improving its thermoelectric performance. The preparation method comprises: mixing and stirring aniline and nano-carbon materials, in-situ chemical oxidation polymerization and secondary doping with camphorsulfonic acid Prepare a composite film of nano-carbon material and polyaniline, the composite film of the nano-carbon material and polyaniline is an organic composite film; the method for improving its thermoelectric performance is: soaking the above-mentioned organic composite film in an alkaline solution to remove Doped, then taken out, washed with clean water until neutral and dried. The preparation process has simple conditions, low cost, high controllability and excellent stability, and is suitable for large-scale industrial production of organic composite thermoelectric materials.

The invention discloses a low-temperature-resistant flexible thermoelectric material, a thermal battery and a preparation method thereof, wherein the low-temperature-resistant flexible thermoelectric material is obtained by introducing a polyol after cross-linking a flexible stretchable matrix with a redox couple; The stretched matrix is ​​obtained by copolymerizing polyelectrolyte monomers and water-soluble monomers. The redox pair forms a mixture with polyol and water, and the flexible stretchable matrix is ​​soaked in the mixture for solvent exchange to obtain the flexible thermoelectric material. The invention has the advantages of convenient manufacture, short production cycle, low production cost, easy batch production, high thermal battery performance, good mechanical properties, and excellent low temperature resistance performance. Applications in extremely low temperature environments such as space offer broad prospects.

The invention discloses a bismuth telluride-based N-type thermoelectric material and a preparation method thereof. It was synthesized by two-step method of melt-mixing and zone melting. Synthetic method: select the elemental raw materials according to Bi 2 (Te 1‑x Sex) 3 , 0.02≤x≤0.1, the chemical formula content is weighed, adding the metal antimony (Sb) of 0.01%-0.03% by weight and the non-metallic iodine (I) of 0.03%-0.06% by weight on the basis of the weighed weight; Put it into a quartz tube with a relatively flat sintered bottom for vacuum sealing, then put it into a resistance-heated swing furnace, place the quartz tube in a vertical position, and then sinter it by melting and mixing. After sintering is completed and naturally cooled to room temperature, the quartz tube is taken out and placed on a vertical zone furnace for pulse zone melting. The invention has the advantages that: the preparation method is simple, and a bulk material with high density, near single crystal structure and a small amount of nano crystal grains can be obtained.

The invention provides a preparation method of a silver nano-particle loaded magnesium aluminate material and prepared materials. The method includes steps: 1) mixing seaweed-shaped magnesium aluminate powder and soluble silver salt solution, ultrasonically dispersing mixture for 10-60min, stirring the mixture for 10-60min, and uniformly mixing the mixture to obtain mixed solution; 2) mixing the mixed solution of the step 1) and reducing agents, stirring mixture for 10-60min, uniformly mixing the mixture, and drying the uniformly-mixed mixture to remove moisture to obtain MgAl2O4 / Ag nano-powder; 3) performing spark plasma sintering on the MgAl2O4 / Ag nano-powder acquired in the step 2) to obtain the silver nano-particle loaded magnesium aluminate material. The weight percentage of soluble silver salt is 0.1-20%. The high-performance ceramic thermoelectric material is prepared by the aid of high conductivity of Ag and a seaweed-shaped one-dimensional transmission structure and a high Seebeck coefficient of magnesium aluminate.

The invention relates to an infrared thermopile type sensor based on the CMOS DPTM process and a manufacturing method of the infrared thermopile type sensor. The infrared thermopile type sensor comprises a silicon substrate and a closing film area located on the silicon substrate, and is characterized in that the closing film area sequentially comprises a first medium layer, a second medium layer, a third medium layer and a fourth medium layer from the bottom layer to the top, a first polycrystalline silicon layer and a second polycrystalline silicon layer are arranged between the medium layers, a first metal layer is arranged between the second medium layer and the third medium layer, a second metal layer is arranged between the third medium layer and the fourth medium layer, a third metal layer is arranged on the surface of the fourth medium layer, first through holes and second through holes are formed in the second medium layer and the third medium layer respectively, a corrosion channel is formed in the closing film area, and a cavity is formed in the position, below the closing film area, of the silicon substrate in an etched mode. According to the infrared thermopile type sensor based on the CMOS DPTM process and the manufacturing method of the infrared thermopile type sensor, the polycrystalline silicon layers and the metal layers in the CMOS process are used for machining a micro-machine structure, and the process achieves low-cost manufacturing of MEMS devices.

The invention discloses a metal-oxide type thin-film thermocouple and a preparation method thereof. The metal-oxide type thin-film thermocouple comprises a substrate, and a tungsten-rhenium 26 thin film region and an indium oxide thin film region, wherein the tungsten-rhenium 26 thin film region and the indium oxide thin film region are arranged on the substrate. The tungsten-rhenium 26 thin filmregion is in contact with the indium oxide thin film region. Tthe thermocouple has the characteristics of high temperature resistance and high thermoelectric output capability, and the preparation method is simple.