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33results about How to "Seebeck coefficient is high" patented technology
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Hole compensation type skutterudite thermoelectric material and preparation method therefore
ActiveCN102881814AIncrease filling volumeHigh conductanceIron compoundsCobalt compoundsSkutteruditeElectron number
The invention relates to a hole compensation type skutterrudite thermoelectric material and a preparation method of the hole compensation type skutterudite thermoelectric material. The hole compensation type skutterudite thermoelectric material is shown in the following description: RyA(4-x)BxSb12 / z NC, wherein x is equal to or greater than 0.01 and equal to or less than 0.5, y is equal to or greater than 0.01 and equal to or less than 1 and z is equal to or greater than 0% and equal to or less than 10%; R is selected from at least one of the following group of elements: Ca, Ba, La, Ce, Pr, Nd and Yb; A is selected from at least one of the following group of elements: Fe, Co and Ni; B is selected from at least one of the following group of transition metal elements: Ti, V, Cr, Mn, Fe, Nb, Mo, Tc and Ru, and electron number of the element B is less than that of the element A; and NC is in phase II, wherein z is mole% in the phase II of the thermoelectric material. The invention also provides the preparation method of the hole compensation type skutterrudite thermoelectric material.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
Terahertz detector based on multilayer-single-layer graphene junction and preparation method thereof
ActiveCN109817802ASeebeck coefficient is highGood external interferenceThermoelectric device with peltier/seeback effectThermoelectric device manufacture/treatmentWave detectionWave response
The invention discloses a terahertz detector based on a multilayer-single-layer graphene junction and a preparation method thereof. Conductive channels in the detector are composed of multilayer-single-layer graphene junctions connected with one another; the multilayer-single-layer graphene junction is an effective sensitive area for terahertz wave detection; under the irradiation of terahertz waves, the photo-thermo-electric effect electromotive force of the multilayer graphene is greater than that of the single-layer graphene, so that a combined photo-thermo-electric effect electromotive force dominated by the multilayer graphene is formed; the combined photo-thermo-electric effect electromotive force is output in a circuit in a voltage or current mode to finally obtain terahertz wave response. In addition, the combined photo-thermo-electric effect electromotive force is regulated and controlled through a gate piezoelectric field, and the responsivity and the sensitivity of the detector can be further improved. Compared with the prior art, by combining the respective advantages of the single-layer graphene and the multi-layer graphene, the responsivity of the detector can be effectively improved, so that terahertz detection with high response speed and high responsivity is realized at room temperature.
Owner:HUAZHONG UNIV OF SCI & TECH +1
High-power-factor zinc oxide thermoelectric material and preparation method therefor
ActiveCN105355771AHigh densityIncrease the doping concentrationThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsZinc
The invention relates to a high-power-factor zinc oxide thermoelectric material and a preparation method therefor. The high-power-factor zinc oxide thermoelectric material comprises zinc oxide and an additive, wherein the content of zinc oxide is 97.2-99.7 wt%, and the content of the additive is 0.3-2.8 wt%; and the additive comprises 0.1-1wt% of Al2O3, 0.1-0.8wt% of MgO and 0.1-1wt% of TiO2. According to the zinc oxide thermoelectric material, the doping concentration of the donor Al can be effectively improved; and the solid solubility of the Al in ZnO is from a range below an energy spectrum detection line to 2 at%, so that the conductivity of the material is greatly improved consequently and the thermal conductance is basically kept the same.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Preparation method of composite material based on metal organic framework and carbon nanotubes, and preparation method of device
ActiveCN111253759ALower lattice thermal conductivityDoping effect weakenedThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsThermal insulation
The invention discloses a preparation method of a composite material based on a metal organic framework and carbon nanotubes, and a preparation method of a device. The preparation method comprises thefollowing steps: firstly, preparing a P-type Ni<3>(HITP)<2> / CNT composite material and an N-type Ni<3>(HITP)<2> / CNT composite material; then respectively tabletting the P-type Ni<3>(HITP)<2> / CNT composite material and the Ni<3>(HITP)<2> / CNT composite material by using a square tabletting mold at a pressure of 10-30 MPa for 5-30 minutes so as to obtain a P-type composite block material and an N-type composite block material, then assembling the P-type composite block material and the N-type composite block material; and connecting connecting parts by using a conductive silver adhesive or a copper wire so as to obtain the device. The N-type stable MOF / CNT composite material with the highest performance is successfully prepared and applied to device circuits, and the porous composite material with high conductivity and low thermal conductivity has potential application value in the fields of catalytic materials, gas adsorption materials, thermal insulation materials and high-performancethermoelectric materials.
Owner:XI AN JIAOTONG UNIV
Preparation method for SnTe thermoelectric materials with high output power density and energy conversion efficiency
ActiveCN109585639AHigh Seebeck coefficientHigh power factorThermoelectric device manufacture/treatmentChemical industryMuffle furnaceEnergy conversion efficiency
The present invention relates to a preparation method for SnTe thermoelectric materials with high output power density and energy conversion efficiency, and relates to the preparation method for SnTethermoelectric material. The problem is solved that the output power density and energy conversion efficiency of the current thermoelectric materials cannot be improved at the same time. The preparation method comprises the steps that: 1, according to the stoichiometric ratio of (SnTe)2.94(In2Te3)0.02-(Cu2Te)3x, the Sn powder, the Te powder, the In powder and the Cu powder are weighed; the mixtureis put in a high-temperature muffle furnace to perform heat preservation at a high temperature, then cooling and heat preservation and finally furnace cooling to obtain ingot casting; and 3, the ingot casting is grinded and put in a graphite mold to perform sintering at a certain temperature and pressure to obtain In-Cu co-doped SnTe thermoelectric materials. The preparation method for SnTe thermoelectric materials with high output power density and energy conversion efficiency is suitable for preparation of the SnTe thermoelectric materials with high output power density and energy conversion efficiency.
Owner:HARBIN INST OF TECH
Light flexible paper-based 1T-phase tungsten disulfide/carbon nanotube composite thermoelectric material and preparation method thereof
ActiveCN110911544AImprove conductivityImprove effective qualityThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsCellulose
The invention belongs to the technical field of new energy thermoelectric conversion materials, and particularly relates to a light flexible and high-thermoelectric-conversion-efficiency composite thermoelectric material taking common cellulose paper as a substrate and a preparation method of the composite thermoelectric material. According to the preparation method, carbon nanotubes dispersed bya surfactant are used as a molecular template, and 1T-phase tungsten disulfide nanosheets with metalloid properties are grown on the surfaces of the carbon nanotubes through a concise and efficient hydrothermal synthesis method, so that 1T-phase tungsten disulfide nanosheet / carbon nanotube composite powder is obtained. The novel cellulose paper-based 1T-phase tungsten disulfide / carbon nanotube composite thermoelectric material is obtained by taking common cellulose paper with high water absorption as a substrate material and combining a roller press calendering and chemical doping method. According to the prepared composite thermoelectric material, the flexibility of the cellulose paper is reserved, meanwhile, the characteristics of all components of the composite material are combined, the excellent thermoelectric performance is obtained, and a new thought and direction are developed for development and application of high-performance thermoelectric materials in the field of new energy.
Owner:CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
Vertical square column type nanometer thermoelectric power generator for microcontroller
InactiveCN108447971AMeet power needsHigh power outputMaterial nanotechnologyThermoelectric device manufacture/treatmentMicrocontrollerThermopile
The invention relates to a vertical square column type nanometer thermoelectric power generator for a microcontroller. A substrate includes an N type silicon chip, and is provided with a lower electrode of a thermopile, a polyimide thermal insulation layer, a P type arm of the thermopile, an N type arm of the thermopile, an upper electrode of the thermopile, a first silicon nitride isolation layerand a heat sink. The P type arm and the N type arm of the thermopile are connected in series via the upper and lower electrodes of the thermopile, and concretely, the thermopile is composed of a series of P type polycrystalline silicon nano wire clusters and N type nano wire clusters. The thermal conductivity of a silicon nanometer material used by the generator is much lower than that of a traditional body material, the thermoelectric power generation efficiency is improved, heat loss power generated by the microcontroller is recovered via thermoelectric conversion, higher power output is realized via lower internal resistance of the square column, the output power can reach microwatt and milliwatt level, and power supply requirements of many microsystems, especially low power equipmentnear the microcontroller, can be met.
Owner:SOUTHEAST UNIV
Preparation method of organic composite material film and method for improving thermoelectric performance of organic composite material film
ActiveCN109705574ASuitable for large-scale industrial productionThe preparation process conditions are simpleThermoelectric materialsComposite film
The invention discloses a preparation method of an organic composite material film and a method for improving thermoelectric performance of the organic composite material film. The preparation methodcomprises the following steps: mixing aniline with a nano-carbon material by stirring, and preparing a composite film of the nano-carbon material and polyaniline through in-situ chemical oxidation polymerization and a camphorsulfonic acid secondary doping method, wherein the composite film of the nano-carbon material and polyaniline is the organic composite material film. The method for improvingthermoelectric performance comprises the following steps: putting the organic composite material film in an alkali solution for soaking treatment for undoping, then taking out the organic composite material film, carrying out washing with clear water until neutrality, and carrying out drying. The preparation process is simple in condition, low in cost, high in controllability and excellent in stability, and is suitable for large-scale industrial production of organic composite thermoelectric materials.
Owner:WUHAN INSTITUTE OF TECHNOLOGY
Flexible sensing layer, preparation method of flexible sensor and flexible sensor
PendingCN114199426AImprove pressure sensitivityBig changeAdditive manufacturing apparatusThermometers using electric/magnetic elementsThermoelectric materialsEngineering
The invention provides a flexible sensing layer, a preparation method of a flexible sensor and the flexible sensor, and relates to the technical field of sensors, and the preparation method of the flexible sensing layer comprises the following steps: preparing a flexible sensing layer matrix with a multi-stage pore structure by using a 3D printing technology; a thermoelectric material coating is additionally arranged on the surface of the flexible sensing layer substrate; and performing plasma treatment on the surface of the thermoelectric material coating to obtain the flexible sensing layer. According to the invention, the internal contact area in a pressure state is changed through the flexible sensing layer substrate with the multi-stage secondary pore structure, the variation amplitude of resistance is influenced, and the pressure sensitivity of the flexible sensing layer is improved; the thermoelectric material coating is additionally arranged, so that the temperature resistance effect is reduced, and signal crosstalk between resistance and thermoelectric voltage signals is reduced; the surface of the thermoelectric material coating is subjected to plasma treatment, so that the carrier concentration is improved, the Seebeck coefficient is further improved, and the effect of improving the temperature sensitivity of the sensor is achieved.
Owner:NINGBO NOTTINGHAM NEW MATERIALS INST CO LTD +1
Preparation method of boron-doped p type carbon nanotube with high seebeck coefficient
InactiveCN103496689BIncrease the number ofSeebeck coefficient is highCarbon compoundsBoron doped carbonTemperature difference
The invention relates to a preparation method of a boron-doped p type carbon nanotube with a high seebeck coefficient. The preparation method comprises the following steps: carrying out boron doping onto the carbon nanotube under a high temperature by using B2O3 as a boron source, wherein atoms B in B2O3 and atoms C in the carbon nanotube generate the following replacement reaction: XB2O3<+>(2+3x) C (nanotubes) to 2BxC (nanotubes)+3xCO; and then, washing, filtering and drying to obtain the boron-doped carbon nanotube (BxC). Percentage of atoms B in the boron-doped carbon nanotube (BxC) can be remarkably increased by increasing a ratio of a reactant B2O3 to the carbon nanotube, and maximum value of x can reach 0.1. According to the preparation method disclosed by the invention, reaction steps are simple and controllable, thermo-electric effect of the boron-doped carbon nanotube is remarkably strengthened and seebeck coefficient is greatly increased; moreover, the greater the x value is, the more obvious the improved seebeck coefficient is. Internal current carriers of the prepared boron-doped carbon nanotube focus on p type current carriers, so that the seebeck coefficient can reach up to 24.05 mu V / K which is increased by about 35% in comparison with that of the original carbon nanotube. The boron-doped carbon nanotube prepared by the method disclosed by the invention can be widely applied to a novel thermoelectric energy material based on temperature difference power generation.
Owner:TONGJI UNIV
N-type pbse-pbs based thermoelectric material and preparation method thereof
ActiveCN108878635BReduce high temperature lattice thermal conductivityOptimizing electro-thermal transport propertiesThermoelectric device manufacture/treatmentThermoelectric device junction materialsIngotThermoelectric conversion
The invention discloses an n-type PbSe-PbS-based thermoelectric material and a preparation method thereof. The preparation method of the present invention comprises the following steps: firstly take Pb particles, Se powder, S powder and Cu powder and mix uniformly; then package the mixed sample in a vacuum quartz glass tube; then place the quartz tube in a vertical tube furnace for sintering ; Finally, the obtained ingot is ground into a fine powder, and then vacuum hot-pressed and sintered into a regular block. The n-type thermoelectric material prepared by the invention has very high thermoelectric performance, and its thermoelectric figure of merit is as high as 1.74. The present invention improves the thermoelectric properties of n-type PbSe-PbS-based thermoelectric materials through batching process, melting and casting process, and sintering process, and prepares novel n-type PbSe-PbS-based thermoelectric materials with ideal thermoelectric conversion efficiency for the future realization of no-transmission parts, Noiseless, pollution-free, reliable and stable thermal energy conversion is the foundation. The method of the invention has simple process, easy control and low cost.
Owner:SHANGHAI UNIV
A kind of high-performance pedot-tellurium nanoparticle composite film and its preparation method
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
A kind of preparation method of thermoelectric power generation material
ActiveCN113121235BImprove thermoelectric conversion efficiencyHigh mechanical strengthThermoelectric device manufacture/treatmentThermoelectric device junction materialsBismuth tellurideEngineering physics
Owner:HARBIN INST OF TECH
Thermal-stacking infrared sensor and mfg. method thereof
InactiveCN1203295CStretched areaLower resistancePhotometrySolid-state devicesOptoelectronicsThermoelectric element
A thermopile infrared sensor with improved output voltage-Johnson noise S / N ratio, infrared absorption characteristics, and production yield, and a manufacturing method thereof. A thermoelectric element is formed on a substrate with a cavity, and by means of the contact between the polysilicon layer and the metal thin film layer, a hot junction part is formed on the chip center side of the polysilicon layer, and a cold junction part is formed on the peripheral side of the chip, and used The metal thin film layer connects the hot junction part and the adjacent cold junction part to form a column of thermoelectric elements connected in series.
Owner:ISHIZUKI ELECTRONICS
Laser irradiation PbS quantum dot embedded SnSe thermoelectric material and preparation method and application thereof
ActiveCN113540334AThe synthesis process is simpleEasy to operateThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsSolvothermal reaction
The invention discloses a laser irradiation PbS quantum dot embedded SnSe thermoelectric material and a preparation method and application thereof, which belong to the technical field of thermoelectric materials and devices. The preparation method comprises the following steps of uniformly dispersing PbS in a solvent to obtain a solution A, and performing irradiation treatment on the solution A through a non-focused laser in ultrasound to obtain a solution B, uniformly dispersing SnCl2.2H2O in a solvent to obtain a solution C, and uniformly dispersing NaSeO3 in the solution C to obtain a solution D, uniformly mixing the solution B and the solution D to obtain a solution E, uniformly dispersing NaOH into the solution E, then carrying out solvothermal reaction, and cleaning and drying an obtained product system to obtain a solid product, and carrying out spark plasma sintering pressing treatment on the solid product to prepare the laser irradiation PbS quantum dot embedded SnSe thermoelectric material. The prepared laser irradiation PbS quantum dot embedded SnSe thermoelectric material improves the conductivity and Seebeck coefficient, and can be applied to preparation of a deep space spacecraft ultra-long life power supply or preparation of a self-powered infinite sensor and other application occasions.
Owner:SHAANXI UNIV OF SCI & TECH
Nano-film rectangular thermocouple array thermoelectric micro-nano generator in radio frequency transceiver
InactiveCN108470819ASimple structureInhibits heat transportMaterial nanotechnologyThermoelectric device with peltier/seeback effectRadio frequencyHeat sink
The invention provides a nano-film rectangular thermocouple array thermoelectric micro-nano generator in a radio frequency transceiver. A substrate is an N-type silicon wafer, and P-type arms of a thermopile, N-type arms of the thermopile, a first silicon nitride spacer, an electrode Ti / Au layer of the thermopile, a second silicon nitride spacer and a heat sink metal Al layer are prepared. The main unit of the thermoelectric micro-nano generator is a thermopile. The thermopile is composed of several P-type arms and N-type arms. The thermoelectric arms use a periodic nano-silicon multilayer film, a layer of metal Ti / Au is sputtered to connect P-type and N-type thermoelectric arms in series, and a thermopile structure is obtained by serial connection. The nano-silicon film used in the generator has much lower thermal conductivity than the conventional body material, thereby greatly improving the thermoelectric power generation efficiency. The waste heat generated by the generator when using the RF transceiver component is subjected to thermoelectric energy conversion and then is stored in the battery via a DC-DC boost voltage-stabilizing circuit, thereby powering the low-power modules such as the surrounding wireless sensor nodes.
Owner:SOUTHEAST UNIV
A method for preparing a composite material based on a metal-organic framework and carbon nanotubes and a method for preparing a device
ActiveCN111253759BLower lattice thermal conductivityDoping effect weakenedThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsCopper wire
A method for preparing a composite material based on a metal-organic framework and carbon nanotubes and a method for preparing a device, first preparing a p-type Ni 3 (HITP) 2 / CNT composites and N-type Ni 3 (HITP) 2 / CNT composite material, then P-type Ni 3 (HITP) 2 / CNT composites and N-type Ni 3 (HITP) 2 / CNT composite materials are respectively pressed into tablets by a square tableting die, the pressure is 10-30MPa, and the time is 5-30 minutes to obtain a P-type composite block material and an N-type composite block material, and then the P-type composite block material and N-type composite block materials are assembled, and the joints are connected with conductive silver glue or copper wires to obtain devices. The present invention successfully prepares and obtains N-type stable MOF / CNT composite material with the highest performance, and applies it to device circuit applications. This kind of porous composite material with high electrical conductivity and low thermal conductivity is used in catalytic materials, gas adsorption materials, heat insulation Materials and high-performance thermoelectric materials have potential application value.
Owner:XI AN JIAOTONG UNIV
A high Seebeck coefficient aqueous thermochemical battery and device
ActiveCN109616678BSeebeck coefficient is highIncreases the entropy of redox reactionsDeferred-action cellsThermoelectric device with peltier/seeback effectNew energyPhysical chemistry
The invention belongs to the technical field of new energy, and more specifically relates to a high Seebeck coefficient water system thermochemical battery and a device. The water-based electrolyte of the water-based thermochemical battery includes a redox pair aqueous solution and an organic small molecule additive, and the organic small molecule additive is dispersed in the redox pair aqueous solution; the organic small molecule additive is a guanidinium salt derivative and / or Amino derivatives, high Seebeck coefficient electrolytes are obtained by adding one or more of the above-mentioned small organic molecules to the redox couple aqueous solution. Changing the type and concentration of small organic molecules can regulate the Seebeck coefficient and output performance of the aqueous thermochemical battery.
Owner:HUAZHONG UNIV OF SCI & TECH
Hole-compensated skutterudite thermoelectric material and preparation method thereof
ActiveCN102881814BHigh thermoelectric figure of meritIncreased maximum theoretical conversion efficiencyIron compoundsCobalt compoundsElectron holeSkutterudite
The present disclosure relates to skutterudite thermoelectric materials of hole- compensated type and method of making the same, providing a skutterudite thermoelectric material of hole-compensated type having a composition represented by the following formula RyA4-xBxSb12 / z NC, where 0.01 = x =0.5, 0.01 = y =1, 0% = z = 10%; R is at least one element selected from the group consisting of Ca, Ba, La, Ce, Pr, Nd and Yb; A is at least one element selected from the group consisting of Fe, Co and Ni; B is at least one transition metal element selected from the group consisting of Ti, V, Cr, Mn, Fe Nb, Mo, Tc and Ru such that element(s) B have fewer electrons than element(s) A; and NC is a second phase where z is a mole percentage of the second phase in the thermoelectric material. Also disclosed are methods of making a skutterudite thermoelectric material of hole-compensated type.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
Terahertz detector based on multi-layer-single-layer graphene junction and its preparation method
ActiveCN109817802BSeebeck coefficient is highGood external interferenceThermoelectric device with peltier/seeback effectThermoelectric device manufacture/treatmentWave detectionHemt circuits
Owner:HUAZHONG UNIV OF SCI & TECH +1
Preparation method of organic composite film and method for improving its thermoelectric performance
ActiveCN109705574BSuitable for large-scale industrial productionThe preparation process conditions are simpleThermoelectric materialsComposite film
The invention discloses a method for preparing an organic composite film and a method for improving its thermoelectric performance. The preparation method comprises: mixing and stirring aniline and nano-carbon materials, in-situ chemical oxidation polymerization and secondary doping with camphorsulfonic acid Prepare a composite film of nano-carbon material and polyaniline, the composite film of the nano-carbon material and polyaniline is an organic composite film; the method for improving its thermoelectric performance is: soaking the above-mentioned organic composite film in an alkaline solution to remove Doped, then taken out, washed with clean water until neutral and dried. The preparation process has simple conditions, low cost, high controllability and excellent stability, and is suitable for large-scale industrial production of organic composite thermoelectric materials.
Owner:WUHAN INSTITUTE OF TECHNOLOGY
Calcium-manganese-oxygen thermoelectric material and preparation method thereof
PendingCN114656243AReduce material costsLow thermal conductivityThermoelectric device manufacture/treatmentThermoelectric device junction materialsManganese oxidePerovskite (structure)
The invention discloses a calcium-manganese-oxygen thermoelectric material and a preparation method thereof, and the thermoelectric material is characterized in that cubic-phase CaMnO3 is used as a matrix phase, lamellar CaO is used as an embedded phase, the embedded phase is dispersed in the matrix phase and is directionally arranged, and a tetragonal perovskite symbiotic structure CaO (CaMnO3) m is formed; the preparation method comprises the following steps: uniformly mixing CaO and MnO2, and then carrying out high-temperature sintering; the mixture subjected to high-temperature sintering is subjected to ball milling, powder is formed, the ball milling mass ratio is (10-30): 1, the ball milling time is 0.5-4 h, and the diameter of the powder reaches 30-1000 nm; collecting powder, and carrying out hot pressing treatment on the powder under inert gas; calcium oxide and manganese oxide are used as raw materials, ball milling and hot pressing are performed to form the tetragonal perovskite symbiotic structure CaO (CaMnO3) m, so that the Seebeck coefficient of the thermoelectric material is improved, the ball milling mass ratio and the ball milling time are controlled, the heat conductivity is reduced, the thermoelectric conversion efficiency of the thermoelectric material is optimized, the cost is reduced, and industrial production is facilitated.
Owner:PREGIS NEW MATERIALS (SHENZHEN) PTE LTD
SnTe Ge-doped thermoelectric material and preparation method thereof
ActiveCN112838157ALow costShort reaction cycleThermoelectric device manufacture/treatmentThermoelectric device junction materialsHigh densityMetallurgy
The invention discloses a preparation method of a SnTe Ge-doped thermoelectric material. The preparation method comprises the steps: 1, smelting of the SnTe Ge-doped thermoelectric material and 2, sintering of the SnTe Ge-doped thermoelectric material. According to the application of the SnTe Ge-doped thermoelectric material, under the temperature of 823 K, the Seebeck coefficient is up to 126-129 [mu]VK<-1>, the power factor is 20-24 [mu]Wm<-1>K<-2>, the heat conductivity is as low as 2.69-3.15 Wm<-1>m<-1>, and the thermoelectric figure of merit ZT is 0.58-0.62. Compared with the prior art, the SnTe Ge-doped thermoelectric material has the following advantages: 1, the obtained SnTe Ge-doped thermoelectric material has the characteristics of high crystallinity, few impurities, high density, large Seebeck coefficient, low thermal conductivity and large thermoelectric performance improvement amplitude; and 2, the preparation method has the characteristics of commercially available raw materials, low cost, short reaction period, low energy consumption in the reaction process, low pollution, simple process operation, high repeatability and strong controllability.
Owner:GUILIN UNIV OF ELECTRONIC TECH
A low temperature resistant flexible thermoelectric material, thermal battery and preparation method thereof
ActiveCN113260101BGuaranteed to workSeebeck coefficient is highDeferred-action cellsSecondary cellsThermoelectric materialsPolyelectrolyte
The invention discloses a low-temperature-resistant flexible thermoelectric material, a thermal battery and a preparation method thereof, wherein the low-temperature-resistant flexible thermoelectric material is obtained by introducing a polyol after cross-linking a flexible stretchable matrix with a redox couple; The stretched matrix is obtained by copolymerizing polyelectrolyte monomers and water-soluble monomers. The redox pair forms a mixture with polyol and water, and the flexible stretchable matrix is soaked in the mixture for solvent exchange to obtain the flexible thermoelectric material. The invention has the advantages of convenient manufacture, short production cycle, low production cost, easy batch production, high thermal battery performance, good mechanical properties, and excellent low temperature resistance performance. Applications in extremely low temperature environments such as space offer broad prospects.
Owner:SOUTHEAST UNIV
Planar strip-type nano thermoelectric generator for microcontroller
InactiveCN108428781ASimple processEasy process integrationThermoelectric device detailsSilicon nitrideDynamo
The invention discloses a planar strip-type nano thermoelectric generator for a microcontroller. The substrate is an N-type silicon wafer, and a P-type arm 2 of a thermopile, an N-type arm 3 of the thermopile, polymethyl methacrylate 4, a first silicon nitride isolation layer 5, a metal aluminum connecting wire 6, a second silicon nitride isolation layer 7 and a cooling plate 8 are prepared. A positive electrode and a negative electrode are connected as shown in Figure 2, the P-type thermoelectric arm 2 and the N-type thermoelectric arm 3 are connected through the metal aluminum 6, and in particular, the thermopile is formed by a series of P-type polysilicon nanowire clusters and N-type polysilicon nanowire clusters, and details are seen in local enlargement in Figure 2. Through thermoelectric conversion, thermal dissipation power generated by working of the microcontroller can be recovered; the thermal conductivity of the adopted silicon nano-particles is much lower than that of the traditional material, heat transfer is suppressed while electronic transportation is maintained, the thermoelectric generation efficiency is improved; and finally, the electric energy generated duringthe above process can be provided for low-power consumption equipment near the microcontroller.
Owner:SOUTHEAST UNIV
Bismuth telluride-based n-type thermoelectric material and preparation method thereof
InactiveCN106571422BLow purity requirementHigh densityThermoelectric device manufacture/treatmentThermoelectric device junction materialsBismuth tellurideZone melting
The invention discloses a bismuth telluride-based N-type thermoelectric material and a preparation method thereof. It was synthesized by two-step method of melt-mixing and zone melting. Synthetic method: select the elemental raw materials according to Bi 2 (Te 1‑x Sex) 3 , 0.02≤x≤0.1, the chemical formula content is weighed, adding the metal antimony (Sb) of 0.01%-0.03% by weight and the non-metallic iodine (I) of 0.03%-0.06% by weight on the basis of the weighed weight; Put it into a quartz tube with a relatively flat sintered bottom for vacuum sealing, then put it into a resistance-heated swing furnace, place the quartz tube in a vertical position, and then sinter it by melting and mixing. After sintering is completed and naturally cooled to room temperature, the quartz tube is taken out and placed on a vertical zone furnace for pulse zone melting. The invention has the advantages that: the preparation method is simple, and a bulk material with high density, near single crystal structure and a small amount of nano crystal grains can be obtained.
Owner:SUZHOU UNIV OF SCI & TECH +1
High-performance PEDOT-tellurium nanoparticle composite film and preparation method thereof
The invention relates to a high-performance PEDOT-tellurium nanoparticle composite film and a preparation method thereof, wherein the composite film comprises a PEDOT film and tellurium nanoparticlesuniformly distributed in the PEDOT film, the particle size of the tellurium nanoparticle is 2-300 nm, and the content of the tellurium nanoparticle is 1.1-33.9 wt%. According to the present invention,with the high-performance PEDOT-tellurium nanoparticle composite film, the Seebeck coefficient of the material can be effectively improved under the extremely low adding amount of tellurium.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
A kind of preparation method of carbon nanotube-magnesium aluminate composite material and prepared material
The invention provides a preparation method of a silver nano-particle loaded magnesium aluminate material and prepared materials. The method includes steps: 1) mixing seaweed-shaped magnesium aluminate powder and soluble silver salt solution, ultrasonically dispersing mixture for 10-60min, stirring the mixture for 10-60min, and uniformly mixing the mixture to obtain mixed solution; 2) mixing the mixed solution of the step 1) and reducing agents, stirring mixture for 10-60min, uniformly mixing the mixture, and drying the uniformly-mixed mixture to remove moisture to obtain MgAl2O4 / Ag nano-powder; 3) performing spark plasma sintering on the MgAl2O4 / Ag nano-powder acquired in the step 2) to obtain the silver nano-particle loaded magnesium aluminate material. The weight percentage of soluble silver salt is 0.1-20%. The high-performance ceramic thermoelectric material is prepared by the aid of high conductivity of Ag and a seaweed-shaped one-dimensional transmission structure and a high Seebeck coefficient of magnesium aluminate.
Owner:WUHAN INSTITUTE OF TECHNOLOGY
Infrared thermopile sensor based on cmos DPTM process and its manufacturing method
ActiveCN103342333BReduces resistor thermal noiseHigh sensitivityDecorative surface effectsSolid-state devicesThermopileEngineering
The invention relates to an infrared thermopile type sensor based on the CMOS DPTM process and a manufacturing method of the infrared thermopile type sensor. The infrared thermopile type sensor comprises a silicon substrate and a closing film area located on the silicon substrate, and is characterized in that the closing film area sequentially comprises a first medium layer, a second medium layer, a third medium layer and a fourth medium layer from the bottom layer to the top, a first polycrystalline silicon layer and a second polycrystalline silicon layer are arranged between the medium layers, a first metal layer is arranged between the second medium layer and the third medium layer, a second metal layer is arranged between the third medium layer and the fourth medium layer, a third metal layer is arranged on the surface of the fourth medium layer, first through holes and second through holes are formed in the second medium layer and the third medium layer respectively, a corrosion channel is formed in the closing film area, and a cavity is formed in the position, below the closing film area, of the silicon substrate in an etched mode. According to the infrared thermopile type sensor based on the CMOS DPTM process and the manufacturing method of the infrared thermopile type sensor, the polycrystalline silicon layers and the metal layers in the CMOS process are used for machining a micro-machine structure, and the process achieves low-cost manufacturing of MEMS devices.
Owner:中科芯未来微电子科技成都有限公司
A metal-oxide thin film thermocouple and its preparation method
ActiveCN111076836BHigh sensitivity coefficientExcellent thermoelectric output capabilityThermometers using electric/magnetic elementsVacuum evaporation coatingThin film thermocouplesRhenium
The invention discloses a metal-oxide type thin-film thermocouple and a preparation method thereof. The metal-oxide type thin-film thermocouple comprises a substrate, and a tungsten-rhenium 26 thin film region and an indium oxide thin film region, wherein the tungsten-rhenium 26 thin film region and the indium oxide thin film region are arranged on the substrate. The tungsten-rhenium 26 thin filmregion is in contact with the indium oxide thin film region. Tthe thermocouple has the characteristics of high temperature resistance and high thermoelectric output capability, and the preparation method is simple.
Owner:XI AN JIAOTONG UNIV
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