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Hole-compensated skutterudite thermoelectric material and preparation method thereof

A hole-compensating, thermoelectric material technology, applied in the direction of thermoelectric device junction lead-out materials, chemical instruments and methods, cobalt compounds, etc., to achieve the effect of increased conductance and power factor, good industrialization prospects, and easy control

Active Publication Date: 2015-11-25
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In summary, so far, there is still a lack of a practical method that can effectively increase the filling amount of skutterudite and related processes for preparing this material in this field.

Method used

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  • Hole-compensated skutterudite thermoelectric material and preparation method thereof
  • Hole-compensated skutterudite thermoelectric material and preparation method thereof
  • Hole-compensated skutterudite thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0131] Example 1: n-type material

[0132] Ce 0.2 co 3.95 mn 0.05 Sb 12 / zNC(z=0) material

[0133] The high-purity metal raw materials Ce, Co, Mn, and Sb were mixed in a glove box according to the molar ratio of 0.2:3.95:0.05:12. The mixture was placed in a quartz tube with a carbon film on the inner wall, and the vacuum was pumped while using argon. The gas plasma flame is used for packaging, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were heated to 1100° C. at a rate of 3° C. / min and melted for 12 hours. Quenching is carried out after melting, the quenching medium is brine, and the quenching speed is about 300°C / s. After quenching, the quartz tube was annealed at 800° C. for 120 hours, and the obtained block was ground into fine powder and then spark plasma sintered. The sintering temperature was 600° C., the holding time was 5 minutes, and the pressure was 50 MPa. Thermoelectric performance tests reveal hole...

Embodiment 2

[0134] Example 2: p-type material

[0135] Ce 0.95 Fe 3.8 mn 0.2 Sb12 / zNC(z=0) material

[0136] The metal raw materials Ce, Fe, Mn, and Sb are mixed in the glove box according to the molar ratio of 0.95:3.8:0.2:12, and the raw materials are sealed in a quartz tube with a carbon film evaporated on the inner wall, and the vacuum is drawn while using argon plasma The flame is used for packaging, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were heated to 1100° C. at a rate of 3° C. / min and melted for 12 hours. Quenching is carried out after the melting is completed, the quenching medium is brine, and the quenching speed is about 300°C / s. The quenched ingot and the quartz tube were annealed at 600°C for 200 hours. The block was ground into fine powder and then spark plasma sintered. The sintering temperature was 600°C, the holding time was 10 minutes, and the pressure was 60MPa. EPMA shows that the components of the s...

Embodiment 3

[0137] Example 3: p-type material

[0138] Ce 0.95 Fe 3.35 co 0.5 mn 0.15 Sb 12 / zNC(z=0) material

[0139] The metal raw materials Ce, Fe, Co, Mn, and Sb are mixed in the glove box according to the molar ratio of 0.95:3.8:0.2:12, and the raw materials are sealed in a quartz tube with a carbon film on the inner wall. The gas plasma flame is used for packaging, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were heated to 1100° C. at a rate of 3° C. / min and melted for 12 hours. Quenching is carried out after the melting is completed, the quenching medium is brine, and the quenching speed is about 300°C / s. The quenched ingot and the quartz tube were annealed at 600°C for 200 hours. The block was ground into fine powder and then spark plasma sintered. The sintering temperature was 600°C, the holding time was 10 minutes, and the pressure was 60MPa. EPMA shows that the components of the sample are evenly distributed in ...

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Abstract

The present disclosure relates to skutterudite thermoelectric materials of hole- compensated type and method of making the same, providing a skutterudite thermoelectric material of hole-compensated type having a composition represented by the following formula RyA4-xBxSb12 / z NC, where 0.01 = x =0.5, 0.01 = y =1, 0% = z = 10%; R is at least one element selected from the group consisting of Ca, Ba, La, Ce, Pr, Nd and Yb; A is at least one element selected from the group consisting of Fe, Co and Ni; B is at least one transition metal element selected from the group consisting of Ti, V, Cr, Mn, Fe Nb, Mo, Tc and Ru such that element(s) B have fewer electrons than element(s) A; and NC is a second phase where z is a mole percentage of the second phase in the thermoelectric material. Also disclosed are methods of making a skutterudite thermoelectric material of hole-compensated type.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and provides a hole compensation type filled skutterudite-based material with excellent thermoelectric performance and a preparation method thereof. Background technique [0002] Thermoelectric conversion technology can use the Seebeck and Peltier effects of semiconductor materials to directly realize the mutual conversion between thermal energy and electrical energy. This technology has the characteristics of small system size, high reliability, no emission of pollutants, and wide applicable temperature range. As a special power supply and high-precision temperature control device, it has been widely used in high-tech fields such as space technology, military equipment, and IT technology. . The energy conversion efficiency of thermoelectric materials mainly depends on the material's dimensionless thermoelectric performance factor ZT (ZT=S 2 σT / κ, where S is the Seebeck coefficient, σ is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/18C22C12/00H10N10/853
CPCC01G51/006C01G49/009C01P2002/52C01P2004/80C01P2006/40H01L35/18H10N10/853
Inventor 陈立东仇鹏飞刘睿恒张文清黄向阳史迅杨炯何琳
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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