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SnTe Ge-doped thermoelectric material and preparation method thereof

A technology of thermoelectric material and discharge plasma, which is applied in the direction of lead wire material of thermoelectric device and the manufacture/processing of thermoelectric device. , low cost and strong controllability

Active Publication Date: 2021-05-25
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this technology effectively reduces the thermoelectric rate of the system and improves the thermoelectric performance to a certain extent, the Seebeck coefficient of the system is not very large, the thermoelectric figure of merit ZT is still relatively small, and the thermoelectric performance needs to be improved.

Method used

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  • SnTe Ge-doped thermoelectric material and preparation method thereof
  • SnTe Ge-doped thermoelectric material and preparation method thereof
  • SnTe Ge-doped thermoelectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0035] A kind of preparation method of SnTe doped Ge thermoelectric material, concrete steps are as follows:

[0036] Step 1, the smelting of SnTe-doped Ge thermoelectric material, with the ratio of Sn powder, Ge powder and Te powder satisfying the amount of substance is 0.4:0.6:1, weigh 1.4259 g of Sn powder, 1.3086 g of Ge powder and 3.8318 g of Te powder After mixing, put the uniformly mixed raw material powder into the quartz tube to evacuate and seal the tube, then place the quartz tube vertically in the muffle furnace, with a heating time of 12 hours, a holding temperature of 1173 K, and a holding time of Melting for 6 hours, when the heat preservation is over, immediately take out the quartz tube and water quench to room temperature, and finally break the quartz tube to get the ingot;

[0037] Step 2, sintering the SnTe-doped Ge thermoelectric material, grinding the molten ingot obtained in step 1 with an agate mortar for 30 minutes and sieving to obtain a molten ingot ...

Embodiment 2

[0054] A method for preparing a SnTe-doped Ge thermoelectric material, the steps not specified in particular are the same as the preparation method in Example 1, the difference is that in the weighing process of step 1, the Sn powder, Ge powder and Te powder meet the amount of substances The ratio is 0.2:0.8:1, weigh 0.7130 g of Sn powder, 1.7449 g of Ge powder and 3.8318 g of Te powder and mix uniformly to obtain a SnTe-doped Ge thermoelectric material with high density. The obtained material is denoted as Ge 0.8 sn 0.2 Te.

[0055] In order to prove that the obtained SnTe-doped Ge thermoelectric material is Ge 0.8 sn 0.2 Te, the obtained SnTe-doped Ge thermoelectric material is carried out structural feature test, and test method is identical with embodiment 1, and test result is as follows figure 2 shown. Through the analysis of the XRD pattern, it can be seen that the sample has diffraction peaks of different crystal planes and the diffraction intensity of the peak su...

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Abstract

The invention discloses a preparation method of a SnTe Ge-doped thermoelectric material. The preparation method comprises the steps: 1, smelting of the SnTe Ge-doped thermoelectric material and 2, sintering of the SnTe Ge-doped thermoelectric material. According to the application of the SnTe Ge-doped thermoelectric material, under the temperature of 823 K, the Seebeck coefficient is up to 126-129 [mu]VK<-1>, the power factor is 20-24 [mu]Wm<-1>K<-2>, the heat conductivity is as low as 2.69-3.15 Wm<-1>m<-1>, and the thermoelectric figure of merit ZT is 0.58-0.62. Compared with the prior art, the SnTe Ge-doped thermoelectric material has the following advantages: 1, the obtained SnTe Ge-doped thermoelectric material has the characteristics of high crystallinity, few impurities, high density, large Seebeck coefficient, low thermal conductivity and large thermoelectric performance improvement amplitude; and 2, the preparation method has the characteristics of commercially available raw materials, low cost, short reaction period, low energy consumption in the reaction process, low pollution, simple process operation, high repeatability and strong controllability.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a SnTe-doped Ge thermoelectric material and a preparation method thereof. Background technique [0002] In today's world, energy crisis and environmental pollution have become two major problems that need to be solved urgently in the world. Energy conservation and efficient use of energy occupy a prominent position in my country's medium and long-term energy development strategy. Thermoelectric energy conversion technology is a technology that drives the directional movement of electrons inside materials through temperature differences to achieve direct conversion of thermal energy and electrical energy. The working medium of this technology is electrons. Compared with traditional heat engines, it has outstanding advantages such as no transmission parts, no noise, all solid state, zero emissions and zero maintenance requirements. It is considered as a kind of gre...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/16H10N10/01H10N10/852
CPCH10N10/852H10N10/01
Inventor 黄鹏儒黄强孙志海张颖彭乐宇李子源张忠玮刘呈燕徐芬孙立贤
Owner GUILIN UNIV OF ELECTRONIC TECH
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