Preparation method of composite material based on metal organic framework and carbon nanotubes, and preparation method of device

A metal-organic framework and carbon nanotube technology, which can be applied in the manufacture/processing of thermoelectric devices, and lead-out materials of thermoelectric device nodes, etc. effect of value

Active Publication Date: 2020-06-09
XI AN JIAOTONG UNIV
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  • Application Information

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Problems solved by technology

These methods may have the problem of mixed carriers, which will reduce the thermoelectric performance of the material, and even reverse the N-type performance to P-type

Method used

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  • Preparation method of composite material based on metal organic framework and carbon nanotubes, and preparation method of device
  • Preparation method of composite material based on metal organic framework and carbon nanotubes, and preparation method of device
  • Preparation method of composite material based on metal organic framework and carbon nanotubes, and preparation method of device

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preparation example Construction

[0056] The preparation process of the present invention is specifically as follows:

[0057] (1)Ni 3 (HITP) 2 Material preparation process:

[0058] 1.1 Disperse 141.9mg HATP·6HCl (0.267mmol) in 20-50mL deionized water, and record it as liquid A;

[0059] 1.2 Add 95.7mg NiCl 2 ·6H 2 O (0.4mmol) was dispersed in 20-50mL deionized water, and 2-6mL ammonia water was added (the mass concentration of ammonia water was 25%), which was recorded as liquid B;

[0060] 1.3 Place liquid A in an oil bath at 40-80°C, add liquid B to make it evenly mixed;

[0061] 1.4 Air bubbling for 25-60 minutes;

[0062] After 1.5, react at reflux under nitrogen protection for 1-4 hours;

[0063] 1.6 The solid obtained by the reaction is centrifuged and washed three times with ethanol, acetone and deionized water;

[0064] 1.7 Disperse the obtained powder in deionized water and reflux at 105°C for 20-40 hours (change the water once every 10-15 hours);

[0065] 1.8 Then reflux with acetone at 40...

Embodiment 1

[0090] (1)Ni 3 (HITP) 2 Material preparation process:

[0091] 1.1) Disperse 141.9 mg of HATP·6HCl (0.267 mmol) in 30 ml of deionized water, and record it as liquid A;

[0092] 1.2) 95.7mg NiCl 2 ·6H 2 O (0.4 mmol) was dispersed in 30 milliliters of deionized water, and 3 milliliters of ammonia water was added (the mass concentration of ammonia water was 25%), which was recorded as liquid B;

[0093] 1.3) Place liquid A in a 65°C oil bath, add liquid B to mix evenly;

[0094] 1.4) Air bubbling for 45 minutes;

[0095] 1.5) then react for 2 hours under nitrogen protection reflux;

[0096] 1.6) The solid obtained by the reaction is centrifuged and washed three times with ethanol, acetone and deionized water;

[0097] 1.7) Disperse the obtained powder in deionized water, and reflux at 105°C for 36 hours (change the water every 12 hours);

[0098] 1.8) Then reflux with acetone at 65°C for 3 hours;

[0099] 1.9) The powder sample obtained by the reaction is repeatedly wash...

Embodiment 2

[0128] Ni 3 (HITP) 2 Preparation of materials:

[0129] 1.1) Disperse 0.267mmol HATP·6HCl in deionized water to obtain liquid A; wherein, the ratio of HATP·6HCl to deionized water is 0.267mmol: 20mL;

[0130] 0.4mmol NiCl 2 ·6H 2 O is dispersed in deionized water, and ammonia water is added to obtain liquid B; among them, NiCl 2 ·6H 2 O, the ratio of deionized water to ammonia water is 0.4mmol: 30mL: 2mL, and the mass concentration of ammonia water is 25%.

[0131] 1.2) Heat liquid A to 40°C, then add liquid B, and mix evenly; air bubbles for 25 minutes, and then reflux reaction under nitrogen protection for 4 hours to obtain a solid, which is post-treated to obtain Ni 3 (HITP) 2 Material.

[0132] N-type Ni 3 (HITP) 2 Preparation of / CNT composites:

[0133] (1) Carbon nanotubes (10mg) are mixed with sodium dodecylbenzenesulfonate, then added to the solvent, ultrasonically treated to obtain a carbon nanotube dispersion, and an N-type dopant is added to the carbon n...

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Abstract

The invention discloses a preparation method of a composite material based on a metal organic framework and carbon nanotubes, and a preparation method of a device. The preparation method comprises thefollowing steps: firstly, preparing a P-type Ni<3>(HITP)<2>/CNT composite material and an N-type Ni<3>(HITP)<2>/CNT composite material; then respectively tabletting the P-type Ni<3>(HITP)<2>/CNT composite material and the Ni<3>(HITP)<2>/CNT composite material by using a square tabletting mold at a pressure of 10-30 MPa for 5-30 minutes so as to obtain a P-type composite block material and an N-type composite block material, then assembling the P-type composite block material and the N-type composite block material; and connecting connecting parts by using a conductive silver adhesive or a copper wire so as to obtain the device. The N-type stable MOF/CNT composite material with the highest performance is successfully prepared and applied to device circuits, and the porous composite material with high conductivity and low thermal conductivity has potential application value in the fields of catalytic materials, gas adsorption materials, thermal insulation materials and high-performancethermoelectric materials.

Description

technical field [0001] The invention belongs to the field of semiconductor thermoelectric materials, and in particular relates to a preparation method based on metal organic framework and carbon nanotube composite material and a device preparation method. Background technique [0002] Thermoelectric materials can directly convert heat into electricity through the Seebeck effect, have high reliability and durability, and do not require the use of fluids or moving parts, so thermoelectric conversion is considered to be one of the most promising technologies for reducing global energy consumption. Compared with inorganic materials, organic semiconductor materials have unique advantages, such as light weight, good flexibility, easy design of molecular structure to reasonably control the energy band structure, multifunctional chemical doping, large-area solution method film formation, and low intrinsic Thermal conductivity. [0003] Introducing porosity into materials is an effe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L87/00C08L79/02C08K3/04C08K5/3447C08K5/17H01L35/34H01L35/24
CPCC08L87/00C08K3/041C08K5/3447C08K5/175C08K2201/011C08L2203/20H10N10/856H10N10/01C08L79/02
Inventor 王洪李坤财
Owner XI AN JIAOTONG UNIV
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