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Terahertz detector based on multi-layer-single-layer graphene junction and its preparation method

A terahertz detector and single-layer graphene technology, applied in the terahertz field, achieves high carrier mobility, easy integration, and good gate control characteristics

Active Publication Date: 2020-09-08
HUAZHONG UNIV OF SCI & TECH +1
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Problems solved by technology

Furthermore, for single-layer graphene detectors, the optical absorption cross-section of a single molecular layer results in most of the THz radiation not being absorbed by the detector

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  • Terahertz detector based on multi-layer-single-layer graphene junction and its preparation method
  • Terahertz detector based on multi-layer-single-layer graphene junction and its preparation method
  • Terahertz detector based on multi-layer-single-layer graphene junction and its preparation method

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0038] figure 1 , figure 2 Shown is a schematic structural diagram of a terahertz detector based on a multilayer-single layer graphene junction provided by the present invention, and the specific preparation method flow is as follows image 3 shown. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, ...

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Abstract

The invention discloses a terahertz detector based on a multilayer-single-layer graphene junction and a preparation method thereof. Conductive channels in the detector are composed of multilayer-single-layer graphene junctions connected with one another; the multilayer-single-layer graphene junction is an effective sensitive area for terahertz wave detection; under the irradiation of terahertz waves, the photo-thermo-electric effect electromotive force of the multilayer graphene is greater than that of the single-layer graphene, so that a combined photo-thermo-electric effect electromotive force dominated by the multilayer graphene is formed; the combined photo-thermo-electric effect electromotive force is output in a circuit in a voltage or current mode to finally obtain terahertz wave response. In addition, the combined photo-thermo-electric effect electromotive force is regulated and controlled through a gate piezoelectric field, and the responsivity and the sensitivity of the detector can be further improved. Compared with the prior art, by combining the respective advantages of the single-layer graphene and the multi-layer graphene, the responsivity of the detector can be effectively improved, so that terahertz detection with high response speed and high responsivity is realized at room temperature.

Description

technical field [0001] The invention belongs to the technical field of terahertz, and more specifically relates to a terahertz detector based on a multilayer-single-layer graphene junction and a preparation method thereof. Background technique [0002] Electromagnetic waves with a frequency of 0.1-10 THz are usually called terahertz waves, which are between far-infrared light and millimeter waves. Compared with the infrared and microwave technologies that are very mature at this stage, the development of the terahertz frequency band is relatively slow due to the limitation of effective terahertz generators and sensitive detectors, forming the so-called terahertz gap (THz Gap). Compared with other bands, terahertz waves have many unique properties: 1) broadband, the terahertz wave spectrum is very wide, covering the wavelength range from 30 μm to 3000 μm, which can be used as a candidate frequency band for high-speed wireless communication; 2) perspective , terahertz wave ha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/28H01L35/22H01L35/32H01L35/34
Inventor 张有为曹高奇胡方靖马衎衎王顺
Owner HUAZHONG UNIV OF SCI & TECH
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