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Infrared thermopile sensor based on cmos DPTM process and its manufacturing method

A manufacturing method and technology of thermopile, applied to the process for producing decorative surface effects, electric solid devices, electric radiation detectors, etc., can solve the problems of high manufacturing cost, large chip size, poor process compatibility, etc., and achieve manufacturing Low cost, reduced resistance thermal noise, and improved detection rate

Active Publication Date: 2015-12-09
中科芯未来微电子科技成都有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thermopile infrared detectors made with MEMS technology mostly use etching from the back of the silicon wafer to form a full-film structure. This method requires alignment and exposure on both sides of the front and back, and has poor process compatibility with semiconductor foundries.
In addition, this method usually uses wet etching, which has the disadvantages of large chip size and high manufacturing cost

Method used

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  • Infrared thermopile sensor based on cmos DPTM process and its manufacturing method
  • Infrared thermopile sensor based on cmos DPTM process and its manufacturing method
  • Infrared thermopile sensor based on cmos DPTM process and its manufacturing method

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Embodiment 1

[0055] Such as figure 1 , image 3 As shown: the infrared thermopile sensor includes a silicon substrate 1 and a closed film region 101 located on the silicon substrate 1. The closed film region 101 is sequentially composed of a first dielectric layer 3-1 and a second dielectric layer 3-2 from the bottom up. , the third dielectric layer 3-3 and the fourth dielectric layer 3-4, the first polysilicon layer 4-1 is set between the first dielectric layer 3-1 and the second dielectric layer 3-2, and the second dielectric layer A first metal layer 5-1 is arranged between the layer 3-2 and the third dielectric layer 3-3, and a second metal layer 5-2 is arranged between the third dielectric layer 3-3 and the fourth dielectric layer 3-4, The third metal layer 5-3 is provided on the surface of the fourth dielectric layer 3-4; the first through hole 8-1 and the second via hole 8-1 are respectively provided on the second dielectric layer 3-2 and the third dielectric layer 3-3. Through ho...

Embodiment 2

[0072] Such as figure 2 , image 3 As shown: the infrared thermopile sensor includes a silicon substrate 1 and a closed film region 101 located on the silicon substrate 1. The closed film region 101 is sequentially composed of a first dielectric layer 3-1 and a second dielectric layer 3-2 from the bottom up. , the third dielectric layer 3-3 and the fourth dielectric layer 3-4, the first polysilicon layer 4-1 is set between the first dielectric layer 3-1 and the second dielectric layer 3-2, and the second dielectric layer A first metal layer 5-1 is arranged between the layer 3-2 and the third dielectric layer 3-3, and a second metal layer 5-2 is arranged between the third dielectric layer 3-3 and the fourth dielectric layer 3-4, A third metal layer 5-3 is provided on the surface of the fourth dielectric layer 3-4; the second dielectric layer 3-2 is composed of a first layer of silicon oxide 3-2-1 and a second layer of silicon oxide 3-2-2 Composition, the second polysilicon l...

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Abstract

The invention relates to an infrared thermopile type sensor based on the CMOS DPTM process and a manufacturing method of the infrared thermopile type sensor. The infrared thermopile type sensor comprises a silicon substrate and a closing film area located on the silicon substrate, and is characterized in that the closing film area sequentially comprises a first medium layer, a second medium layer, a third medium layer and a fourth medium layer from the bottom layer to the top, a first polycrystalline silicon layer and a second polycrystalline silicon layer are arranged between the medium layers, a first metal layer is arranged between the second medium layer and the third medium layer, a second metal layer is arranged between the third medium layer and the fourth medium layer, a third metal layer is arranged on the surface of the fourth medium layer, first through holes and second through holes are formed in the second medium layer and the third medium layer respectively, a corrosion channel is formed in the closing film area, and a cavity is formed in the position, below the closing film area, of the silicon substrate in an etched mode. According to the infrared thermopile type sensor based on the CMOS DPTM process and the manufacturing method of the infrared thermopile type sensor, the polycrystalline silicon layers and the metal layers in the CMOS process are used for machining a micro-machine structure, and the process achieves low-cost manufacturing of MEMS devices.

Description

technical field [0001] The invention relates to an infrared thermopile sensor, in particular to an infrared thermopile sensor based on a CMOSDPTM (DoublePolyTripleMetal) mixed-signal process and a manufacturing method thereof, belonging to the technical field of design and manufacture of MEMS devices. Background technique [0002] Infrared detectors are one of the most critical components in an infrared system. The thermopile infrared detector is an uncooled infrared detector developed earlier. Its working principle is based on the Seebeck effect, that is, the temperature difference between two different electrical conductors or semiconductor materials causes a voltage difference between the two materials. Because thermopile infrared detectors have the advantages of small size, can work at room temperature, wide-spectrum infrared radiation response, can detect constant radiation, and low manufacturing cost, they are widely used in security monitoring, medical treatment, life...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00G01J5/14
Inventor 孟如男王玮冰
Owner 中科芯未来微电子科技成都有限公司
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