Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Single elastic beam type interdigital capacitor accelerometer

A technology of interdigitated capacitors and accelerometers, which is applied in the field of design and manufacture of MEMS devices, can solve the problems of low measurement accuracy of accelerometers, high cost of manufacturing devices, and difficulty in system integration, achieving low manufacturing costs, reducing resistance thermal noise, The effect of improving sensitivity

Active Publication Date: 2013-08-07
中科芯未来微电子科技成都有限公司
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the inherent thermal noise of resistance and the characteristics of temperature change of resistance value, accelerometers based on piezoresistive detection technology have low measurement accuracy and are mainly used to meet the needs of low-end markets
Tunneling current-sensing technology can be used to realize extremely high-precision accelerometers, but the fabrication of tunneling devices requires a very small gap (10V); so the cost of manufacturing the device is very high. High, and difficult to achieve system integration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single elastic beam type interdigital capacitor accelerometer
  • Single elastic beam type interdigital capacitor accelerometer
  • Single elastic beam type interdigital capacitor accelerometer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The present invention will be further described below in conjunction with specific drawings.

[0035] Such as figure 1 As shown, the single elastic beam interdigital capacitance accelerometer of the present invention includes a substrate 7 and a structural layer on the substrate 7, and the structural layer includes an upper anchor point 1-1, a lower anchor point 1-2, a first interdigital capacitance 2- 1. The second interdigitated capacitor 2-2, the third interdigitated capacitor 2-3, the fourth interdigitated capacitor 2-4, the left elastic beam 3-1, the right elastic beam 3-2, the left mass block 4-1, The right mass block 4-2, the connecting beam 5, the left anchor point 6-1 and the right anchor point 6-2, the upper anchor point 1-1 and the lower anchor point 1-2 are rectangular blocks extending along the left and right directions, and the left anchor point The point 6-1 and the right anchor point 6-2 are square; the left end of the left mass block 4-1 is connected t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Widthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a single elastic beam type interdigital capacitor accelerometer, which comprises a substrate, an upper anchor point, a lower anchor point, interdigital capacitors, elastic beams, mass blocks, a connecting beam, a left anchor point and a right anchor point, wherein the upper anchor point, the lower anchor point, the interdigital capacitors, the elastic beams, the mass blocks, the connecting beam, the left anchor point and the right anchor point are arranged on the substrate. The accelerometer is characterized in that the interdigital capacitors, the elastic beams, the mass blocks and the connecting beam are of a vertical depositing and stacking structure, the vertical depositing and stacking structure sequentially consists of a first SiO2 (silicon dioxide) coating layer, a first metal aluminum coating layer, a second SiO2 coating layer, a second metal aluminum coating layer, a third SiO2 coating layer, a third metal aluminum coating layer and a passivating layer from bottom to top, the first metal aluminum coating layer and the second metal aluminum coating layer are connected by first tungsten plugs which are arranged in the second SiO2 coating layer, the second metal aluminum coating layer and the third metal aluminum coating layer are connected by second tungsten plugs which are arranged in the third SiO2 coating layer, the vertical depositing and stacking structure is provided with a side wall, the side wall extends from the upper surface of the passivating layer to the upper surface of the substrate, and the base is provided with a suspension structure. The capacitor accelerometer has the advantages that the sensitivity is high, the manufacturability is improved, and the manufacturing cost is low.

Description

technical field [0001] The invention relates to a single elastic beam interdigital capacitance accelerometer, in particular to a single elastic beam interdigital capacitance accelerometer based on CMOS DPTM (Double Poly Triple Metal) mixed signal technology, belonging to the technical field of MEMS device design and manufacture. Background technique [0002] Inertial measurement is a major application aspect of MEMS technology. Integrated inertial sensors have a wide range of applications, including automotive engineering, aviation navigation, consumer electronics and military applications. [0003] Today's mainstream acceleration detection technologies include: capacitance detection technology, piezoresistive detection technology, and tunnel effect current detection technology. Due to the inherent thermal noise of resistance and the characteristics of temperature change of resistance value, accelerometers based on piezoresistive detection technology have low measurement acc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01P15/125B81C1/00
Inventor 薛惠琼王玮冰田龙坤
Owner 中科芯未来微电子科技成都有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com