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Hole compensation type skutterudite thermoelectric material and preparation method therefore

A hole-compensating, thermoelectric material technology, applied in the direction of thermoelectric device junction lead-out materials, chemical instruments and methods, cobalt compounds, etc., to achieve the effects of reduced thermal conductivity, easy control, and increased filling amount

Active Publication Date: 2013-01-16
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In summary, so far, there is still a lack of a practical method that can effectively increase the filling amount of skutterudite and related processes for preparing this material in this field.

Method used

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  • Hole compensation type skutterudite thermoelectric material and preparation method therefore
  • Hole compensation type skutterudite thermoelectric material and preparation method therefore
  • Hole compensation type skutterudite thermoelectric material and preparation method therefore

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0131] Example 1: n-type material

[0132] Ce 0.2 co 3.95 mn 0.05 Sb 12 / z NC (z=0) material

[0133] The high-purity metal raw materials Ce, Co, Mn, and Sb were mixed in a glove box according to the molar ratio of 0.2:3.95:0.05:12. The mixture was placed in a quartz tube with a carbon film on the inner wall, and the vacuum was pumped while using argon. The gas plasma flame is used for packaging, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were heated to 1100° C. at a rate of 3° C. / min and melted for 12 hours. Quenching is carried out after melting, the quenching medium is brine, and the quenching speed is about 300°C / s. After quenching, the quartz tube was annealed at 800° C. for 120 hours, and the obtained block was ground into fine powder and then spark plasma sintered. The sintering temperature was 600° C., the holding time was 5 minutes, and the pressure was 50 MPa. Thermoelectric performance tests reveal ho...

Embodiment 2

[0134] Example 2: p-type material

[0135] Ce 0.95 Fe 3.8 mn 0.2 Sb12 / z NC (z=0) material

[0136] The metal raw materials Ce, Fe, Mn, and Sb are mixed in the glove box according to the molar ratio of 0.95:3.8:0.2:12, and the raw materials are sealed in a quartz tube with a carbon film evaporated on the inner wall, and the vacuum is drawn while using argon plasma The flame is used for packaging, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were heated to 1100° C. at a rate of 3° C. / min and melted for 12 hours. Quenching is carried out after the melting is completed, the quenching medium is brine, and the quenching speed is about 300°C / s. The quenched ingot and the quartz tube were annealed at 600°C for 200 hours. The block was ground into fine powder and then spark plasma sintered. The sintering temperature was 600°C, the holding time was 10 minutes, and the pressure was 60MPa. EPMA shows that the components of the...

Embodiment 3

[0137] Example 3: p-type material

[0138] Ce 0.95 Fe 3.35 co 0.5 mn 0.15 Sb 12 / z NC (z=0) material

[0139] The metal raw materials Ce, Fe, Co, Mn, and Sb are mixed in the glove box according to the molar ratio of 0.95:3.8:0.2:12, and the raw materials are sealed in a quartz tube with a carbon film on the inner wall. The gas plasma flame is used for packaging, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were heated to 1100° C. at a rate of 3° C. / min and melted for 12 hours. Quenching is carried out after the melting is completed, the quenching medium is brine, and the quenching speed is about 300°C / s. The quenched ingot and the quartz tube were annealed at 600°C for 200 hours. The block was ground into fine powder and then spark plasma sintered. The sintering temperature was 600°C, the holding time was 10 minutes, and the pressure was 60MPa. EPMA shows that the components of the sample are evenly distributed i...

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Abstract

The invention relates to a hole compensation type skutterrudite thermoelectric material and a preparation method of the hole compensation type skutterudite thermoelectric material. The hole compensation type skutterudite thermoelectric material is shown in the following description: RyA(4-x)BxSb12 / z NC, wherein x is equal to or greater than 0.01 and equal to or less than 0.5, y is equal to or greater than 0.01 and equal to or less than 1 and z is equal to or greater than 0% and equal to or less than 10%; R is selected from at least one of the following group of elements: Ca, Ba, La, Ce, Pr, Nd and Yb; A is selected from at least one of the following group of elements: Fe, Co and Ni; B is selected from at least one of the following group of transition metal elements: Ti, V, Cr, Mn, Fe, Nb, Mo, Tc and Ru, and electron number of the element B is less than that of the element A; and NC is in phase II, wherein z is mole% in the phase II of the thermoelectric material. The invention also provides the preparation method of the hole compensation type skutterrudite thermoelectric material.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and provides a hole compensation type filled skutterudite-based material with excellent thermoelectric performance and a preparation method thereof. Background technique [0002] Thermoelectric conversion technology can use the Seebeck and Peltier effects of semiconductor materials to directly realize the mutual conversion between thermal energy and electrical energy. This technology has the characteristics of small system size, high reliability, no emission of pollutants, and wide applicable temperature range. As a special power supply and high-precision temperature control device, it has been widely used in high-tech fields such as space technology, military equipment, and IT technology. . The energy conversion efficiency of thermoelectric materials mainly depends on the material's dimensionless thermoelectric performance factor ZT (ZT=S 2 σT / κ, where S is the Seebeck coefficient, σ is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/18C22C12/00H10N10/853
CPCC01G51/006C01G49/009H01L35/18C01P2004/80C01P2006/40C01P2002/52H10N10/853
Inventor 陈立东仇鹏飞刘睿恒张文清黄向阳史迅杨炯何琳
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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