72results about How to "Reduce bombardment" patented technology

The invention relates to the technical field of ion sources, and particularly discloses a double cup cover ion source filament seat structure for preventing metal spraying. The structure adopts a simple double cup cover set shackle structure, and achieves the functional effect of insulation (tungsten filament spraying and plasma bombardment and the like) in bad working conditions by adding insulating parts as least as possible and size change at a position with limited space; an upper cover completely covers a rectangular block structure of a molybdenum rod, thus greatly reducing plasma bombardment which is easily suffered, fully utilizing the safety clearance between a lower cup cover and a ceramic straight tube to achieve better insulation effect and avoiding short-circuit phenomenon ofan anode of an ion source metal wall and a filament cathode; by the design structure, the invention solves the problem that short circuit occurs to the ceramic insulation part of the seat body due tothe metal plating and filament spraying and plasma bombardment in the research process of large-power ion source, greatly improves experiment safety coefficient and simultaneously prolongs the servicelife of the filament and the ceramic part.

The present invention provides a thin film deposition device and a thin film deposition method. The thin film deposition device includes a reaction chamber, a target, a wafer support device, an energy controller, and a power source electrically connected to the target, and the power source is arranged at Outside the reaction chamber, the target is arranged at the top of the reaction chamber, the wafer support device is arranged at the bottom of the reaction chamber and is opposite to the target, and the energy controller is arranged at The target and the wafer supporting device are connected to the ground, and the energy controller is provided with a plurality of through holes penetrating through its thickness, and the inner diameter of the through holes is smaller than the mean free path of molecular collision. The thin film deposition device can reduce the damage on the wafer surface.

The invention provides a Bosch etching method. The method comprises the following steps: a substrate is fixed on a base in a reaction chamber, and a mask layer with an opening is formed on the substrate; etching is performed: etching gas is piped in, a source radio frequency power source is applied to the reaction chamber so as to maintain plasma concentration in the reaction chamber, meanwhile, a first bias power source is applied to the base, and partial substrate is etched along the opening so as to form an etching hole; deposition is performed: deposition gas is piped in, a second bias power source is applied to the base, deposition is performed on the side wall surface of the etching hole and the surface of the mask layer so as to form a polymer, wherein the frequency of the second bias power source is larger than that of the first bias power source; etching and deposition are performed repeatedly until a through hole is formed in the substrate. The Bosch etching method provided by the invention can guarantee the etching rate, and meanwhile has higher stability.