Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A medium-embedded meander metal ribbon high-frequency structure

A technology of high-frequency structures and metal strips, which is applied to the circuit components of time-of-flight electron tubes, and can solve problems such as inability to work, affecting the working performance of traveling wave tubes, and affecting the flow of electron beams.

Inactive Publication Date: 2018-05-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With this kind of meandering metal strip high-frequency structure, in the process of interacting with the electron beam, the electron beam passes directly above the surface of the dielectric substrate, which makes it easy for the poorly focused electrons to hit the dielectric substrate. Non-conductive, causing charge to accumulate on the dielectric substrate, such as figure 1 As shown, the resulting negative pressure not only affects the circulation of the electron beam, but also affects the working performance of the traveling wave tube. In severe cases, the traveling wave tube will be damaged and cannot work.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A medium-embedded meander metal ribbon high-frequency structure
  • A medium-embedded meander metal ribbon high-frequency structure
  • A medium-embedded meander metal ribbon high-frequency structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings, so that those skilled in the art can better understand the present invention. It should be noted that in the following description, when detailed descriptions of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.

[0022] figure 2 It is a structural schematic diagram of a specific embodiment of the medium-embedded meander metal strip high-frequency structure of the present invention.

[0023] In this example, if figure 2 As shown, when the electromagnetic wave propagates in the meandering metal strip structure supported by dielectric rods with periodic bending, the phase velocity of the electromagnetic wave propagation will be lower than the speed of light, and the energy is transferred to the electromagnetic wave through the electron beam synchronized with the electromagnetic wave...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a medium-embedded zigzag metal strip high-frequency structure. The dielectric substrate of the microstrip high-frequency structure is replaced by a dielectric support rod having the same change period as the zigzag metal strip, and at the same time, the dielectric support rod is partially embedded in the zigzag metal strip. , the exposed area of ​​the medium facing the electron beam is greatly reduced, and the dielectric support rod is partially embedded in the meandering metal belt, which further reduces the exposed area of ​​the medium, thereby reducing the probability of electrons bombarding the dielectric substrate and avoiding the generation of charge accumulation effect . At the same time, in order to enable the dielectric support rods to be embedded in the meandering metal strip, it is necessary to use a relatively thicker metal band than the meandering metal band printed on the dielectric substrate. Due to the increase in thickness, the meandering metal band can better withstand electron bombardment and improve the Structural stability, better thermal conductivity. In addition, compared with the existing planar microstrip high-frequency structure composed of a dielectric substrate and meandering metal strips, the invention also has wider cold bandwidth and higher coupling impedance.

Description

technical field [0001] The invention belongs to the technical field of electric vacuum devices, and more specifically relates to a medium-embedded meandering metal band high-frequency structure in a planar traveling wave tube amplifier. Background technique [0002] As an important class of microwave and millimeter wave power sources, electric vacuum devices are widely used in communication, guidance, remote sensing and other technical fields. Although electric vacuum devices have the advantages of high power, high gain, high efficiency, high frequency and long life, solid-state power amplifier devices are small in size, light in weight, and can be integrated. , is posing a growing challenge to electric vacuum devices. How to achieve miniaturization and low voltage while ensuring the advantages of electric vacuum devices, so as to better meet the needs of technological development, is an important development direction of electric vacuum devices. [0003] The planar travel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J23/24
CPCH01J23/24
Inventor 丁冲魏彦玉李倩张鲁奇王文祥岳玲娜赵国庆
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products