ITO thin film sputtering process and ITO thin film sputtering apparatus

A technology of sputtering process and sputtering equipment, which is applied in the field of ITO thin film sputtering process method and ITO thin film sputtering equipment, can solve the problems of cost increase, equipment structure and operation complexity, and reduce the uniformity of TIO thin film, so as to achieve uniformity Improve the uniformity of film deposition and reduce the effect of bombardment damage

Active Publication Date: 2014-08-06
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, adding a baffle mechanism will also reduce the uniformity of the TIO film, and the structure and operation of the equipment are complicated and the cost increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ITO thin film sputtering process and ITO thin film sputtering apparatus
  • ITO thin film sputtering process and ITO thin film sputtering apparatus
  • ITO thin film sputtering process and ITO thin film sputtering apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0040] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an ITO thin film sputtering process and an ITO thin film sputtering apparatus. The method comprises the following steps: before introducing process gas into a reaction chamber, controlling output voltage of a direct current sputtering power source to be predetermined voltage and applying predetermined power on a target material by using the direct current sputtering power source; introducing the process gas into the reaction chamber after predetermined time so as to allow the process gas to realize glow starting in the reaction chamber; and after glow starting, applying sputtering power on the target material by using the direct current sputtering power source to implement sputtering, wherein the sputtering power is more than or equal to the predetermined power but less than or equal to the rated power of the sputtering power source. The ITO thin film sputtering process provided by the invention can greatly reduce glow starting voltage, mitigates bombardment of a GaN layer caused by too high particle energy at the moment of glow starting and effectively reduces damage to the GaN layer. Moreover, since no new mechanism is needed, stability is improved, adjustment of the process can be conveniently carried out, and thin film deposition uniformity is enhanced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an ITO thin film sputtering process method and ITO thin film sputtering equipment. Background technique [0002] In recent years, due to the huge market demand for light-emitting diodes (LEDs), GaN-based LEDs have been widely used in different fields such as high-power lighting, automotive instrument displays, large-area outdoor displays, signal lights, and general lighting. [0003] In the LED chip manufacturing process, due to the low doping of P-type GaN and the low light transmittance of P-type ohmic metal contact, high contact resistance and low light transmittance will be caused, which seriously affects the improvement of the overall performance of the LED chip. In order to improve light extraction efficiency and reduce contact resistance, it is necessary to develop a transparent conductive film suitable for P-type GaN. As a transparent conductive film, ITO film (tin-doped in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
CPCC23C14/086C23C14/3492H01L31/022475H01L31/1884
Inventor 耿波叶华文利辉杨玉杰夏威王厚工丁培军
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap