98results about How to "Improve deposition uniformity" patented technology

The invention provides reciprocating type rotary CVD equipment and an application method. The reciprocating type rotary CVD equipment comprises a cavity, a wafer heating base and a rotating device, the rotating device is located outside the cavity and comprises a rotary power mechanism and a rotary sealing mechanism, and the rotary sealing mechanism comprises a rotating part and a fixed part; andthe fixed part is fixedly connected with the cavity in a sealed mode, the rotating part is fixedly connected with the wafer heating base in a sealed mode, the rotating part is movably connected with the fixed part in a sealed mode, the rotating part is connected with the rotary power mechanism, and the rotary power mechanism drives the rotating part and the wafer heating base to perform reciprocating rotary operation. According to the reciprocating type rotary CVD equipment, through the rotation of the rotating device, the uniformity of thin film deposition in the circumferential direction ofthe wafer can be improved, and the manufacturing cost of equipment and the wafer is reduced.

The invention provides a deposition mask and a deposition apparatus using the same. A deposition mask can include a base member including a first surface and a second surface which are divided into afirst region, a second region and a third region; a first opening in the first region; a second opening in the second region; and a third opening in the third region, in which each of the first, second and third openings can have a cross-section having an hourglass shape, in which the hourglass shapes of the first and third openings lean away from the second opening relative to the second surfaceof the base member. In this way, a shadow effect can be minimized during a deposition process and deposition uniformity can be improved.

The invention discloses a monolithic integration method of a hyperspectral image sensor. The monolithic integration method comprises the following steps of forming a bottom reflection layer on the surface of a light sensing region of a complementary metal-oxide-semiconductor (CMOS) image sensor; forming a transparent cavity layer on the bottom reflection layer by an area selective atomic layer deposition process, wherein the transparent cavity layer comprise N step structures, N is equal to 2m, m is more than or equal to 1 and is an integer; and forming a top reflection layer on the transparent cavity layer. With the monolithic integration method of the hypersepctral image sensor, provided by the invention, the problem of non-uniform accumulation caused by an etching process adopted by the prior art is optimized, and meanwhile, the fact that the material of the cavity layer cannot be fabricated by the etching method is expanded on selection of the material of the cavity layer; the similar one-dimensional area selective atomic layer deposition mode can be extended, for example, another dimension is additionally arranged, several repeated regions are fabricated, and then a mosaic-type multiple cavity layers with different heights and the repeated structure can be formed; and the monolithic integration method can be applied to a snapshot hyperspectral image sensor, and the performance such as pixel of the hyperspectral image sensor is greatly improved.

The invention provides a preparation apparatus for a diamond film. The apparatus employs a microwave plasma chemical vapor deposition device and comprises a microwave system, a vacuum system, a gas supply system and a plasma reaction chamber, wherein an autogyration substrate table is arranged in the plasma reaction chamber, microwaves generated by the microwave system during working enter into the plasma reaction chamber and excite gas supplied by the gas supply system above the autogyration substrate table to generate a plasma ball, and a refractory metal circular ring is arranged above the autogyration substrate table and located in the lower half part of the plasma ball.