Dry etching device

Abstract

The invention provides a dry etching device. Compared with the existing dry etching device, by increasing the thickness of a focus ring (72) under an edge ring (71) for withstanding ion bombardment or reducing the dielectric constant of the material of the focus ring (72) under the edge ring (71) for withstanding ion bombardment, the sheath voltage on the surface of the edge ring (71) is reduced based on the Kirchhoff's law of partial pressure. Therefore, bombardment of ions to the edge ring (71) is weakened, the service life of the edge ring (71) is prolonged, the normal working time of the dry etching device is increased, and the maintenance cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a dry etching device. Background technique [0002] With the development of the information society, people's demand for display devices has increased, which has also promoted the rapid development of the LCD panel industry, and the output of panels has continued to increase. Etching is an important process in the process of manufacturing thin film transistor liquid crystal display (ThinFirmTransistorLiquidCrystalDisplay, TFT-LCD) array substrate process. The etching process is divided into a dry etching process and a wet etching process according to the physical state of the etchant. The dry etching process uses an etching gas for etching, and the wet etching process uses an etching liquid for etching. [0003] Such as figure 1 As shown, the existing dry etching device generally includes: a vacuum chamber (not shown), an upper electrode plate (not shown) ar...

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Problems solved by technology

[0004] When the current electrode plate 1 is the same size as the wafer to be etched or the substrate 4, the energy of the plasma above the edge of the wafer to be etched or the substrate 4 is reduced, resulting in uneven etching of the wafer to be etched or the substrate 4

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