Magnetron sputtering equipment

Abstract

The invention discloses magnetron sputtering equipment. The magnetron sputtering equipment comprises a vacuum chamber wall, a connecting shaft, a workbench and an electric conduction electrode, wherein the vacuum chamber wall surrounds a vacuum chamber; one end of the connecting shaft is connected to the vacuum chamber wall, the workbench is arranged in the vacuum chamber and is arranged on the other end of the connecting shaft, and the workbench is used for fixing a substrate; the electric conduction electrode is arranged on the vacuum chamber wall in a penetrating manner, one end of the electric conduction electrode is connected with the workbench, the workbench is electrically connected with an external power source through the electric conduction electrode, and the external power source applies high potential on the workbench through the electric conduction electrode. The magnetron sputtering equipment provided by the invention has the advantages that the workbench and the substrate are protected by the high potential, electrification positive ions flying to the substrate is influenced by electric field acting force in the opposite direction, the quantity and energy of electrification positive particles are greatly reduced, the bombardment of the surface of the substrate caused by the electrification positive particles is reduced, the sediment deposited on the surface of the substrate is protected, the surface of the sediment is smooth, and the quality of a crystal is good.

Description

technical field [0001] The invention relates to magnetron sputtering technology, in particular to a magnetron sputtering device. Background technique [0002] As a common physical vapor deposition method, magnetron sputtering has been successfully applied to the preparation of different thin films. The magnetron sputtering method uses the characteristic that charged ions have certain kinetic energy after being accelerated in an electric field, and guides the ions to the material to be sputtered (sputtering target) as the target electrode (cathode). When the energy of the ions is suitable, the incident ions collide with the atoms on the surface of the target, and the latter are sputtered out. These sputtered atoms have a certain kinetic energy, and will fly in a certain direction and shoot towards the substrate. and deposited on the substrate to achieve thin film growth. During the sputtering process, the gas pressure and power of the sputtering can be controlled and the di...

AI Technical Summary

Problems solved by technology

Using higher sputtering power and shortening the distance between the substrate and the target will make the charged positive ions from multiple target surfaces obliquely incident on the substrate at the same time, and the total bombardment power that the substrate bears is relatively large. Deposits on the surface of the substrate will cause re-sputtering to leave the sample surface

The surface of the sample will produce obvious composition and structure inhomogeneity, and the resulting large number of defects will also greatly affect the crystal quality of the film

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