Thin film deposition device and thin film deposition method

Abstract

The present invention provides a thin film deposition device and a thin film deposition method. The thin film deposition device includes a reaction chamber, a target, a wafer support device, an energy controller, and a power source electrically connected to the target, and the power source is arranged at Outside the reaction chamber, the target is arranged at the top of the reaction chamber, the wafer support device is arranged at the bottom of the reaction chamber and is opposite to the target, and the energy controller is arranged at The target and the wafer supporting device are connected to the ground, and the energy controller is provided with a plurality of through holes penetrating through its thickness, and the inner diameter of the through holes is smaller than the mean free path of molecular collision. The thin film deposition device can reduce the damage on the wafer surface.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a thin film deposition device and a thin film deposition method. Background technique [0002] Physical vapor deposition equipment is often used to form thin films on wafers. figure 1 It is a typical physical vapor deposition equipment. Such as figure 1 As shown, the physical vapor deposition apparatus comprises a reaction chamber having a chamber wall 4 . A target 1 is arranged on the top of the reaction chamber, and a magnetron 2 is arranged above the target 1 . A wafer support device 6 is provided at the bottom of the reaction chamber 1 and opposite to the target 1 , and the wafer support device 6 is in a suspended state (not grounded). Wafer 5 is placed on the upper surface of wafer support device 6 . A DC power supply 3 is also provided outside the reaction chamber 1 , the negative pole of the DC power supply 3 is connected to the target 1 , and the other end of the DC pow...

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Problems solved by technology

This negative bias will attract positive metal ions generated from the target, increasing the coverage of the hole grooves of the wafer 5, and at the same time, the negative bias will attract argon ions to bombard the surface of the wafer 5 and cause re-sputtering. The surface or interface of the wafer 5 is very sensitive to the orientation and epitaxial growth of the crystal plane, which will cause damage to the surface of the wafer 5

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