179 results about "Thermal electron" patented technology

This invention relates to processes for the assembly of three-dimensional structures having periodicities on the scale of optical wavelengths, and at both smaller and larger dimensions, as well as compositions and applications therefore. Invention embodiments involve the self assembly of three-dimensionally periodic arrays of spherical particles, the processing of these arrays so that both infiltration and extraction processes can occur, one or more infiltration steps for these periodic arrays, and, in some instances, extraction steps. The product articles are three-dimensionally periodic on a scale where conventional processing methods cannot be used. Articles and materials made by these processes are useful as thermoelectrics and thermionics, electrochromic display elements, low dielectric constant electronic substrate materials, electron emitters (particularly for displays), piezoelectric sensors and actuators, electrostrictive actuators, piezochromic rubbers, gas storage materials, chromatographic separation materials, catalyst support materials, photonic bandgap materials for optical circuitry, and opalescent colorants for the ultraviolet, visible, and infrared regions.

The invention discloses a three-frequency band near-infrared absorber based on a semiconductor super-surface structure, and belongs to the field of metamaterials. The three-frequency band near-infrared absorber sequentially consists of a substrate, a metal film layer and a semiconductor super-surface structure layer from bottom to top, wherein the semiconductor super-surface structure layer consists of a semiconductor particle array and a semiconductor film layer. The three-frequency band near-infrared absorber based on the semiconductor super-surface structure has the advantages that by reasonably designing the geometric size and lattice cycle of the semiconductor super-surface structure layer, the electromagnetic wave which is transmitted into the structure surface is completely absorbed; the structure is simple, the near-infrared band absorbing is realized, and three absorbing peaks are provided; the electromagnetic wave absorbing power is made of the semiconductor material, so that the limitation of only production of single resonance absorbing peak by the single size of the traditional metal resonance unit is overcome, and the absorber is applied into the fields of photoelectrical detection, photoelectrical conversion, production and collection of photo-induced electrons and thermal electrons, absorbing of electromagnetic energy, and the like.

Provided is a tungsten electrode material which uses a material to replace thorium oxide so as to improve the electrode service life as compared to the conventional technique. The tungsten electrode material has a tungsten base and oxide particles dispersed in the tungsten base. The oxide particles are prepared as an oxide solid solution containing in a solid solved state: a Zr oxide and / or a Hf oxide and an oxide of at least one rare earth selected from a group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu.

An electron emission material includes an electron emission material main body, a base metal layer disposed on the electron emission material main body, and a thermal electron emission layer disposed on the base metal layer.

A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

The invention provides a gallium oxide ultraviolet detector based on surface plasmon and a preparation method and application thereof. The gallium oxide ultraviolet detector comprises a substrate, a gallium oxide-metal nanosphere composite active layer on the surface of the substrate, and an electrode disposed on the surface of the active layer, wherein the gallium oxide-metal nanosphere compositeactive layer comprises a gallium oxide film layer and metal nanospheres embedded in the gallium oxide film layer, wherein the metal is selected from one or more of a group including Ga, Al, Mg, and Pt. When the photoelectric detector based on the gallium oxide-metal nanosphere composite film is irradiated by solar-blind ultraviolet light, the metal nanospheres generate a plasmon resonance effectso that the metal nanospheres have an enhanced surface electric field and an increased scattering cross section, and generate energy and thermal electron transfer with a Ga2O3 material, thereby greatly enhancing the solar-blind light detection capability of the gallium oxide-based detector and improving the response sensitivity of the detector.

The invention discloses a multi-band light perfect absorber on the basis of metal film layer-semiconductor resonant cavity composite structures. According to the technical scheme, the multi-band light perfect absorber has the advantages that the multi-band light perfect absorber is a novel multi-band light absorber, incident light is free of influence of high-reflection continuous metal layers which cover integral structures, and accordingly light can be perfectly absorbed by the multi-band light perfect absorber with the absorption rate of 99%; the metal film layers with excellent conductivity electric characteristics wrap the structures of the multi-band light perfect absorber by 100%, and accordingly the multi-band light perfect absorber is perfect in electric response in the aspect of conductivity characteristics such as resistance lower than 0.1 ohm / sq; the shortcoming of deficiency of simultaneous high light absorption and high conductivity characteristics of structural designs in the prior art can be overcome by the aid of excellent optical and electric characteristics of the multi-band light perfect absorber, introduced semiconductor materials are combined with the multi-band light perfect absorber, accordingly, the multi-band light perfect absorber is compact in structure and easy to process and prepare and has an excellent application prospect in development of high-performance photoelectric detection, thermal electron excitation and collection, multi-band filtering and imaging and the like, immeasurable effects can be realized by the multi-band light perfect absorber, and the like.

A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode.

A thermal electron emission source includes a first electrode, a second electrode insulated from the first electrode, a carbon nanotube string electrically connected to and in contact with the first electrode and the second electrode, and a number of electron emission particles. The carbon nanotube string is composed of a number of closely packed carbon nanotube bundles, and each of the carbon nanotube bundles includes a number of carbon nanotubes. The electron emission particles are uniformly dispersed in the carbon nanotube string and are coated on the surfaces of the carbon nanotubes. A method for making the thermal electron emission source is also provided.

An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and / or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.

A method for making the thermal electron emitter includes following steps. Providing a carbon nanotube film including a plurality of carbon nanotubes. Treating the carbon nanotube film with a solution comprising of a solvent and compound or a precursor of a compound, wherein the compound and the compound that is the basis of the precursor of a compound has a work function that is lower than the carbon nanotubes. Twisting the treated carbon nanotube film to form a carbon nanotube twisted wire. Drying the carbon nanotube twisted wire. Activating the carbon nanotube twisted wire.

This ion source includes a chamber having an internal wall surface and an external wall surface, and also includes a cathode, which is provided to be insulated from the chamber, capable of emitting thermal electrons into the chamber, and has a cathode cap protruding into the chamber from an external side of an opening part which is formed to pass through from the external wall surface to the internal wall surface of the chamber and a filament disposed inside the cathode cap, the cathode cap and / or the filament being an alloy containing tungsten (W) as a major component and a predetermined metal element as a minor component.

An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.

An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

Provided are an apparatus for normal pressure plasma ignition and a method for normal pressure plasma ignition using the same. The apparatus for normal pressure plasma ignition of the present invention comprises a wave guide tube wherein microwaves are applied, a dielectric tube that penetrates said wave guide tube and introduces a reactant gas, and an ignition apparatus for normal pressure plasma wherein microwaves are applied in said dielectric tube to turn said reactant gas into plasma, wherein said ignition apparatus penetrates said dielectric tube and includes an ignition rod that emits thermal electrons as said microwaves are applied in said dielectric tube. The apparatus for normal pressure plasma ignition according to the present invention enables ignition to be accomplished without power, so that the problems with the prior art that requires high voltage (excessive power, stability issues) may be avoided at the same time. In addition, the normal pressure plasma ignition apparatus according to the present invention enables movement of the ignition rod inside and outside its dielectric tube so that physical damage to the ignition apparatus due to plasma heat may be prevented, and also affords the effect that the scope of metallic materials used in the ignition apparatus is significantly wider than that of the prior art.

A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

The invention discloses a method for in site rapidly synthesizing rare-earth doping oxide monocrystals. By utilizing the heat effect of the precious metal nano structure plasmon, and by adopting the small-size precious metal nano particles with large absorption sectional area as a heat source, and by virtue of the effect of an external light field of the resonant wavelength, the previous metal nano particles produce extremely high heat in a short time, the heat is transferred to a rare-earth doping luminescent material, so that the local temperature of the rare-earth doping luminescent material is instantaneously increased; and meanwhile, the oxygen molecules absorbed on the surface is catalyzed by virtue of thermal electrons generated by the relaxation of the surface Plasmon, the oxygen molecules are activated, so that the luminescent material is promoted to have oxidization reaction, and under the double effect of the instantaneous high temperature and activated oxygen, the luminescent material is instantaneously changed to the rare-earth doping oxide monocrystal. By adjusting the position of a resonant hump of the precious metal particle Plasmon, the linear adjustment of the exciting light wavelength can be realized. The method is simple, easy, capable of being performed under a room temperature condition, short in reaction time and small in exciting light power density andhas wavelength dependence characteristics.

The invention discloses a dumbbell-shaped gold nano bipyramid / titanium dioxide nano composite material and a preparation method thereof, which belongs to the field of material chemistry. By adopting awet chemical method, by virtue of TiCl3 hydrolysis, TiO2 is generated on two ends of gold nano bipyramid, and a dumbbell-shaped structure is obtained. The gold nano bipyramid is compounded with titanium dioxide, and an absorption spectrum of titanium dioxide is enlarged to a visible light and a near-infrared zones, so that the charge separation of metal thermal electrons can be maximally improved. Compared with a core-shell structure, by adopting the dumbbell-shaped space separation structure, the middle portion of the gold bipyramid is exposed, under the illumination of the visible light andthe near infrared light, the generated SPR thermalelectrons span a schottky barrier and are transferred onto titanium dioxide, so that the thermalelectrons can be effectively separated from the goldnano bipyramid, and the remaining positive charge can directly react with an electron donor on the surface of the gold bipyramid to have the oxidation reaction.By adopting the dumbbell-shaped nano composite material, the generation of the thermal electrons and the photocatalytic performance of the thermalelectrons can be effectively improved.

The invention concerns a process for determining a local emissivity profile of suprathermal electrons coming from an ionized gas ring placed in a toric vessel, with the use of tomographic inversion by means of Bessel functions Jo of order 0 which exploits line-integrated measurements acquired by current real-time Hard-X-Ray diagnostics.

A thermoelectric device includes a thermally conductive first plate and at least one thermoelectric sub-assembly comprises a thermally conductive second plate and a plurality of thermoelectric elements in a region between the first plate and the second plate. The at least one thermoelectric sub-assembly further includes a first material along a first portion of a perimeter of the region and having a first stiffness and a second material along a second portion of the perimeter of the region and having a second stiffness less than the first stiffness.

An amorphous diamond electrical generator having a cathode at least partially coated with amorphous diamond material and an intermediate member coupled between the cathode and an anode. The amorphous diamond material can have at least about 90% carbon atoms with at least about 20% of the carbon atoms bonded in a distorted tetrahedral coordination. The amorphous diamond coating has an energy input surface in contact with a base member of the cathode and an electron emission surface opposite the energy input surface. The electron emission surface can have an asperity height of from about 10 to about 1,000 nanometers and is capable of emitting electrons upon input of a sufficient amount of energy. The intermediate member can be coupled to the electron emission surface of the amorphous diamond coating such that the intermediate member has a thermal conductivity of less than about 100 W / mK and a resistivity of less than about 80 muOmega-cm at 20° C. The amorphous diamond electrical generator is a thermionic emission device having improved electron emission properties.

A plasma generator includes: an arc chamber having a plasma generation region in which plasma is generated in the inside thereof; a magnetic field generator configured to apply a magnetic field to the plasma generation region; and a cathode configured to extend in an axial direction along an applying direction of the magnetic field applied to the plasma generation region and provided with a cathode cap that emits thermal electrons at a front end thereof. The cathode cap protrudes toward the inside of the arc chamber in the axial direction and has a shape of which a width in the radial direction perpendicular to the axial direction becomes smaller toward the inside of the arc chamber.

Provided is a sputtering apparatus which suppresses entry of thermal electrons into a work and does not cause problems such as work deformation due to heat, even at the time of forming a film on materials, such as plastic, having a low heat resistance. The apparatus is provided with a target and a carousel-type work holder arranged to face the target with a rotating shaft, in a vacuum chamber. The carousel-type work holder has a work holder supporting section and a plurality of work holding sections. The work holding section is arranged at the outer circumfernce of the work holder supporting section. The carousel-type work holder and / or the work holding section is rotatably arranged by a shaft arranged within a surface vertical to a surface connecting the target and the rotating shaft of the carousel-type work holder. Inside the carousel-type work holder, a thermal electron capturing member is arranged.

There is provided an accumulation-mode MOSFET. The accumulation-mode MOSFET has a tunnel electron emission portion and a thermionic emission portion which are provided in a source region portion.

A built-in chip vacuum fluorescent display including a vacuum tube having a transparent top substrate, a bottom substrate facing the top substrate with driver chip wirings while being spaced apart from the top substrate with a predetermined distance, and a side glass disposed between the top and the bottom substrates while interconnecting the top and the bottom substrates. A plurality of driver chips is mounted at the bottom substrate within the vacuum tube while being electrically connected to the driver chip wirings. At least one subsidiary substrate is provided at the space between the top and the bottom substrates within the vacuum tube while having wirings electrically connected to the driver chip wirings. Cathodes are provided between the subsidiary substrate and the top substrate within the vacuum tube to emit thermal electrons. Phosphors are patterned at the subsidiary substrate while being electrically connected to the wirings.