175 results about "Thermal electron" patented technology

The invention discloses a multi-band light perfect absorber on the basis of metal film layer-semiconductor resonant cavity composite structures. According to the technical scheme, the multi-band light perfect absorber has the advantages that the multi-band light perfect absorber is a novel multi-band light absorber, incident light is free of influence of high-reflection continuous metal layers which cover integral structures, and accordingly light can be perfectly absorbed by the multi-band light perfect absorber with the absorption rate of 99%; the metal film layers with excellent conductivity electric characteristics wrap the structures of the multi-band light perfect absorber by 100%, and accordingly the multi-band light perfect absorber is perfect in electric response in the aspect of conductivity characteristics such as resistance lower than 0.1 ohm / sq; the shortcoming of deficiency of simultaneous high light absorption and high conductivity characteristics of structural designs in the prior art can be overcome by the aid of excellent optical and electric characteristics of the multi-band light perfect absorber, introduced semiconductor materials are combined with the multi-band light perfect absorber, accordingly, the multi-band light perfect absorber is compact in structure and easy to process and prepare and has an excellent application prospect in development of high-performance photoelectric detection, thermal electron excitation and collection, multi-band filtering and imaging and the like, immeasurable effects can be realized by the multi-band light perfect absorber, and the like.

A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode.

A method for making the thermal electron emitter includes following steps. Providing a carbon nanotube film including a plurality of carbon nanotubes. Treating the carbon nanotube film with a solution comprising of a solvent and compound or a precursor of a compound, wherein the compound and the compound that is the basis of the precursor of a compound has a work function that is lower than the carbon nanotubes. Twisting the treated carbon nanotube film to form a carbon nanotube twisted wire. Drying the carbon nanotube twisted wire. Activating the carbon nanotube twisted wire.

A heat transfer apparatus and method of fabrication are provided for facilitating transmission of heat from a heat generating electronic device. The heat transfer apparatus includes a thermally conductive base having a main surface, and a plurality of thermally conductive fins extending from the main surface. The thermally conductive fins are disposed to facilitate transfer of heat from the thermally conductive base, which can be a portion of the electronic device or a separate structure coupled to the electronic device. At least some conductive fins are composite structures, each including a first material coated with a second material, wherein the first material has a first thermal conductivity and the second material a second thermal conductivity. In one implementation, the thermally conductive fins are wire-bonded pin-fins, each being a discrete, looped pin-fin separately wire-bonded to the main surface and spaced less than 300 micrometers apart in an array.

A thermionic or thermotunneling gap diode device consisting of two silicon electrodes maintained at a desired distance from one another by means of spacers. These spacers are formed by oxidizing one electrode, protecting certain oxidized areas and removing the remainder of the oxidized layer. The protected oxidized areas remain as spacers. These spacers have the effect of maintaining the electrodes at a desired distance without the need for active elements, thus greatly reducing costs.

The invention discloses a method for in site rapidly synthesizing rare-earth doping oxide monocrystals. By utilizing the heat effect of the precious metal nano structure plasmon, and by adopting the small-size precious metal nano particles with large absorption sectional area as a heat source, and by virtue of the effect of an external light field of the resonant wavelength, the previous metal nano particles produce extremely high heat in a short time, the heat is transferred to a rare-earth doping luminescent material, so that the local temperature of the rare-earth doping luminescent material is instantaneously increased; and meanwhile, the oxygen molecules absorbed on the surface is catalyzed by virtue of thermal electrons generated by the relaxation of the surface Plasmon, the oxygen molecules are activated, so that the luminescent material is promoted to have oxidization reaction, and under the double effect of the instantaneous high temperature and activated oxygen, the luminescent material is instantaneously changed to the rare-earth doping oxide monocrystal. By adjusting the position of a resonant hump of the precious metal particle Plasmon, the linear adjustment of the exciting light wavelength can be realized. The method is simple, easy, capable of being performed under a room temperature condition, short in reaction time and small in exciting light power density andhas wavelength dependence characteristics.

The invention discloses a dumbbell-shaped gold nano bipyramid / titanium dioxide nano composite material and a preparation method thereof, which belongs to the field of material chemistry. By adopting awet chemical method, by virtue of TiCl3 hydrolysis, TiO2 is generated on two ends of gold nano bipyramid, and a dumbbell-shaped structure is obtained. The gold nano bipyramid is compounded with titanium dioxide, and an absorption spectrum of titanium dioxide is enlarged to a visible light and a near-infrared zones, so that the charge separation of metal thermal electrons can be maximally improved. Compared with a core-shell structure, by adopting the dumbbell-shaped space separation structure, the middle portion of the gold bipyramid is exposed, under the illumination of the visible light andthe near infrared light, the generated SPR thermalelectrons span a schottky barrier and are transferred onto titanium dioxide, so that the thermalelectrons can be effectively separated from the goldnano bipyramid, and the remaining positive charge can directly react with an electron donor on the surface of the gold bipyramid to have the oxidation reaction.By adopting the dumbbell-shaped nano composite material, the generation of the thermal electrons and the photocatalytic performance of the thermalelectrons can be effectively improved.

A thermal electron emitter includes at least one carbon nanotube twisted wire and a plurality of electron emission particles mixed with the twisted wire. The carbon nanotube twisted wire comprises a plurality of carbon nanotubes. A work function of the electron emission particles is lower than the work function of the carbon nanotubes. A thermal electron emission device using the thermal electron emitter is also related.

A thermoelectric device includes a thermally conductive first plate and at least one thermoelectric sub-assembly comprises a thermally conductive second plate and a plurality of thermoelectric elements in a region between the first plate and the second plate. The at least one thermoelectric sub-assembly further includes a first material along a first portion of a perimeter of the region and having a first stiffness and a second material along a second portion of the perimeter of the region and having a second stiffness less than the first stiffness.

A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

There is provided an accumulation-mode MOSFET. The accumulation-mode MOSFET has a tunnel electron emission portion and a thermionic emission portion which are provided in a source region portion.

A built-in chip vacuum fluorescent display including a vacuum tube having a transparent top substrate, a bottom substrate facing the top substrate with driver chip wirings while being spaced apart from the top substrate with a predetermined distance, and a side glass disposed between the top and the bottom substrates while interconnecting the top and the bottom substrates. A plurality of driver chips is mounted at the bottom substrate within the vacuum tube while being electrically connected to the driver chip wirings. At least one subsidiary substrate is provided at the space between the top and the bottom substrates within the vacuum tube while having wirings electrically connected to the driver chip wirings. Cathodes are provided between the subsidiary substrate and the top substrate within the vacuum tube to emit thermal electrons. Phosphors are patterned at the subsidiary substrate while being electrically connected to the wirings.

A method for making the thermal electron emitter includes following steps. Providing a carbon nanotube film including a plurality of carbon nanotubes. Treating the carbon nanotube film with a solution comprising of a solvent and compound or a precursor of a compound, wherein the compound and the compound that is the basis of the precursor of a compound has a work function that is lower than the carbon nanotubes. Twisting the treated carbon nanotube film to form a carbon nanotube twisted wire. Drying the carbon nanotube twisted wire. Activating the carbon nanotube twisted wire.

An integrated plasmon detector includes a top layer of material adapted to generate a plasmon when excited by a beam of light incident onto a surface of the top layer, an interface layer joined to the top layer opposite from the surface of the top layer and adapted to slow polarons emitted by the plasmon to thermal electrons, and a collector layer joined to the interface layer opposite from the top layer and adapted to collect the thermal electrons from the interface layer.