1706 results about "Activated oxygen" patented technology

Active oxygen scavenging compositions and their use in packaging articles are disclosed. The compositions are all plastic materials and are typically deployed as at least one layer in a multi-layered wall of a packaging article such as a bottle, can or film. The compositions are usually used in conjunction with added transition metal catalyst to enhance the uptake of oxygen. Use of the compositions and package constructions disclosed serves to lengthen the shelf life of packaged oxygen sensitive substances and / or diminish the need for refrigeration of the packages.

A low-foaming cleaning solution and dry particulate formulation which can be diluted with water, deionized water, or mixtures thereof, to form the cleaning solution. The cleaning solution has an alkaline pH, which is preferably from about 8 to about 11.5 and consists essentially of at least one low foaming surfactant in a concentration of from about 0.005% to about 40% w / w of the total solution, at least one active oxygen releasing compound in an amount effective to produce a hydrogen peroxide concentration of from about 0.005% to about 50% w / w of the total solution, at least one builder in a concentration of from about 0.001% to about 50% w / w of the total solution, and at least one diluent selected from the group consisting of water, deionized water, and mixtures thereof. The at least one surfactant is selected from the group consisting of C3-C8 alkane sulfonates, C3-C8 alkyl sulfates, C1-C7 alkyl naphthalene sulfonates, polyoxyethylene / polyoxypropylene block copolymers having a polyoxypropylene molecular weight of from about 1500 to about 8500, of which less than about 30% of the total molecular weight is due to the polyoxyethylene portion, and mixtures thereof. The at least one active oxygen releasing compound is selected from the group consisting of hydrogen peroxide, at least one source of hydrogen peroxide, and mixtures thereof.

It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

The invention aims to provide a health care instrument adapted to measure oxidation-reduction potential in human being, animal, fish and shellfish, plant, vegetable as well as water, air or earth surrounding those organisms and thereby to determine a level of active oxygen in such subject so that the measured data may be used for health care. The object set forth above is achieved by a health care instrument containing an oxidation-reduction potential measuring function comprising a main body, a power source consisting of a battery with or without a battery charger and an oxidation-reduction potential measuring unit both contained in the main body, a measuring probe attached to one end of the main body, a sensor included in the measure probe so as to be connected to the oxidation-reduction potential measuring unit, and a display unit provided on a part of the main body to display the measured oxidation-reduction potential value. The health care instrument according to the invention allows the oxidation-reduction potential in the subject to be easily determined in order to know a condition of the subject's health or growth. The health care instrument allows an internal abnormal condition to be detected and thereby allows the subject to be prevented from being affected by disease. Thus, the health care instrument according to the invention effectively contributes to health care.

A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

I have discovered that trace metals such as copper, zinc, iron, and manganese that are necessary for the proper functioning of superoxide dismutase (SOD) and other deactivators of active-oxygen molecules (which cause aging of skin and other skin disorders), can be delivered from the topical compositions. This is achieved by the preparation of copper and other trace metal complexes with phosphorylated nucleosides, such as nucleotides, and phosphorylated monosaccharides, such as phosphorylated glycosides which act as small molecular weight (SMW) transporter molecules. These trace metal complexes of nucleotides and glycosides can be prepared by an in-situ method in water, water-miscible organic solvent, or a mixture of water and water-miscible organic solvent from commonly available ingredients in concentrations that are desirable and can be accurately controlled. I have additionally discovered compositions to achieve the transport of copper from the surface layers of skin into the deeper layers of skin utilizing SMW transporter molecules; and the intra-cellular storage of copper ions in the cell, for example in a bound form with glutathione; and the intra-cellular transport of copper from glutathione to SOD apoprotein by metallochaperones; and the supply of energetic molecules, such as ATP, ADP, or phosphorylated saccharides for SOD metallochaperones to perform their intra-cellular metal transfer function. These cosmetic or pharmaceutical compositions are useful for antiaging and antiviral benefits.

Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device includes depositing a metallic layer on a lower electrode disposed on a substrate and exposing the metallic layer to an activated oxygen source while heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C. and forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process. The lower electrode contains a silicon material and the metallic layer contains hafnium or zirconium. Subsequent to the oxidation process, the method further includes heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. while forming a metal silicide layer from a lower portion of the metallic layer during a silicidation process.

A plastic preform, container or article includes a multilayer wall having at least one layer of a matrix resin, at least one layer of a barrier resin, an adhesion-promoting material blended with the barrier resin and / or matrix resin, and an active oxygen barrier composition blended with the barrier resin and / or matrix resin. The adhesion-promoting material promotes bonding between the barrier and matrix resin layers and includes an amine polymer, preferably an imine polymer having a number of available primary, secondary or tertiary amine groups. The matrix resin preferably is an ester-containing resin, such as PET. The barrier resin preferably is EVOH. The active oxygen barrier composition includes a metal with an additive compound, and may also include a host polymer.

The invention discloses a preparation method for a high-refractive index hydrogenated silicon film, the high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece and relates to the technical field of optical films. The preparation method comprises the following steps that firstly, by means of magnetic controlled Si target sputtering, Si deposits on abase body, and a silicon film is formed; and secondly, the hydrogenated silicon film containing oxygen is formed through the silicon film under the environment where activated hydrogen and active oxygen are contained, the amount of the activated oxygen accounts for 4%-99% of the total amount of the activated hydrogen and the activated oxygen, or, the hydrogenated silicon film containing nitrogenis formed through the silicon film under the environment where the activated hydrogen and the activated nitrogen are contained, and the amount of the activated nitrogen accounts for 5%-20% of the total amount of the activated hydrogen and the activated nitrogen. According to the preparation method, sputtering and a reaction are separately conducted, firstly, by means of magnetic controlled Si target sputtering, Si deposits on the base body, then, plasmas of the activated hydrogen and the activated oxygen / nitrogen react with the silicon to obtain the oxygen or nitrogen containing SiH, the poisoning problem of a target is avoided, and the SiH film has a relatively high refractive index and relatively low absorption.

The invention belongs to the field of catalysts, particularly relates to a series of inorganic antibacterial mildew-proof monatomic catalysts and a preparation method thereof, and discloses a series of inorganic antibacterial mildew-proof monatomic catalysts. Each monatomic catalyst is composed of a carrier and transition metal, and the carrier is any one of an inorganic calcium-based carrier, aninorganic silicon-based carrier, an inorganic aluminum-based carrier and an inorganic titanium-based carrier; the transition metal is selected from one or more of first transition metal and second transition metal; and the transition metal is anchored at a defect site on the surface of the carrier in a monatomic form. The catalyst can efficiently activate oxygen in air or water without other auxiliary conditions, generate active oxygen species to oxidize cell membranes, proteins, genetic materials and the like of bacteria and kill the bacteria. The monatomic catalyst is stable in structure, free of consumption, capable of being repeatedly used, free of pollution to the environment and free of side effects on organisms.

The invention relates to a method for improving activity of antioxidant enzyme of festuca arundinacea by using fine domestic garbage compost under drought conditions. In the method, a plastic pot with diameter of 7cm and height of 10cm is used through a pot experiment; and the method comprises the steps of: putting 150g of soil into each pot; sowing 0.5g of lawn plants in each pot; uniformly spreading 3g of municipal domestic garbage fine compost with particle sizes of 1,200nm, 600nm and 300nm on the surface of the soil; uniformly covering 20g of soil on the surface of the soil; controlling the temperature to be between 20 and 26 DEG C, wherein the relative humidity is between 40 and 60 percent, and illumination is natural light transmitting indoors; fully watering the plants in the initial stage of sowing, and watering by weighing every day to every two days according to 55 to 65 percent of water-holding capacity in fields after two weeks so as to maintain the capacity within a stress range; and measuring all the indexes on the 44th day. A result shows that the fine compost protects the festuca arundinacea plant from being damaged by active oxygen radicals, and reduces adverse environmental stresses to the plant caused by drought stresses.

A compound represented by general formula (I) or (II) or a salt thereof and an agent for measurement of a reactive oxygen comprising said compound or a salt thereof:wherein R1 and R2 independently represent an aryl group which may be substituted, e.g., a phenyl group substituted with an amino group or a hydroxy group, and R3 represents a 2-carboxyphenyl group which may be substituted.

Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device includes depositing a metallic layer on a lower electrode disposed on a substrate and exposing the metallic layer to an activated oxygen source while heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C. and forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process. The lower electrode contains a silicon material and the metallic layer contains hafnium or zirconium. Subsequent to the oxidation process, the method further includes heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. while forming a metal silicide layer from a lower portion of the metallic layer during a silicidation process.