61 results about "Silica hydride" patented technology

The invention discloses a preparation method for a high-refractive index hydrogenated silicon film, the high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece and relates to the technical field of optical films. The preparation method comprises the following steps that firstly, by means of magnetic controlled Si target sputtering, Si deposits on abase body, and a silicon film is formed; and secondly, the hydrogenated silicon film containing oxygen is formed through the silicon film under the environment where activated hydrogen and active oxygen are contained, the amount of the activated oxygen accounts for 4%-99% of the total amount of the activated hydrogen and the activated oxygen, or, the hydrogenated silicon film containing nitrogenis formed through the silicon film under the environment where the activated hydrogen and the activated nitrogen are contained, and the amount of the activated nitrogen accounts for 5%-20% of the total amount of the activated hydrogen and the activated nitrogen. According to the preparation method, sputtering and a reaction are separately conducted, firstly, by means of magnetic controlled Si target sputtering, Si deposits on the base body, then, plasmas of the activated hydrogen and the activated oxygen / nitrogen react with the silicon to obtain the oxygen or nitrogen containing SiH, the poisoning problem of a target is avoided, and the SiH film has a relatively high refractive index and relatively low absorption.

A method for preparing a thermoplastic vulcanizate, the method comprising dynamically vulcanizing a rubber within a blend that includes the rubber and a thermoplastic polymer, where said dynamically vulcanizing is effected with a cure system that includes a hydrosilating agent and a catalyst, where the hydrosilating agent includes a compound including at least 3 silicon hydride groups defined by the formulawhere each R is independently a monovalent organic group or hydrogen, and where the silicon atoms of the respective silicon hydride groups are spatially separated by at least 6 atoms.

The present invention provides a polysiloxane composition maintaining high transparency over a wide wavelength region and a wide temperature region and being excellent in heat resistance, low-dielectric characteristics, workability, and the like. A polysiloxane composition includes (A) a polysiloxane which is composed of a polysiloxane compound having a polyhedral skeleton having 6 to 24 Si atoms in its molecule and which has at least one alkenyl group bonded directly or indirectly to a Si atom constituting the polyhedral skeleton, (B) a polysiloxane having a hydrosilyl group, and (C) a hydrosilylation catalyst.

The technology provides a multi-purpose dietary supplement that includes, in nutritionally effective amounts for humans, an orally ingestible combination of antioxidants, naturally-occurring substances and extracts of naturally-occurring substances. The naturally-occurring substances and extracts of naturally-occurring substances include at least: finely divided silica hydride; a polyphenol; ginkgo biloba leaf extract; rhodiola rosea root; bacopa monniera extract; a glutathione precursor; a phytoalexin; a bioflavonoids; CoQ10 and a phospholipid.

A first electrode and a doped oxide layer laterally proximate thereof are provided over a substrate. A silicon nitride layer is formed over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode by low pressure chemical vapor deposition using feed gases comprising a silicon hydride, H2 and ammonia. The substrate with silicon nitride layer is exposed to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing. A second electrode is formed over the silicon dioxide layer and the first electrode. In one implementation, the chemical vapor depositing comprises feed gases of a silicon hydride and ammonia, with the depositing comprising increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. and starting feed of the silicon hydride into the reactor at a temperature less than or equal to 600° C. In one implementation the depositing comprises increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. using a temperature ramp rate of at least 10° C. / minute from at least 500° C. to at least 600° C. Other aspects and implementations are described.

The present invention relates to a modified crumb rubber particle having carbon to silicon bonds created by the reaction of the unsaturation in the crumb rubber particle and silicon hydride, with or without the use of a catalyst. Bound silicon content ranges from about 0.1% to 10% by weight. The silicon-modified crumb rubber can be used as is or a reinforcing filler in formulations. Typically the silicon-modified crumb rubber is used in up to 25% by weight of the total rubber present in virgin rubber compositions.