Multi-band light perfect absorber on basis of metal film layer-semiconductor resonant cavity composite structures
A metal film layer, composite structure technology, applied in the fields of nanophotonics and optoelectronic materials, can solve the problem of not being able to have perfect light absorption and perfect conductance response at the same time
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Embodiment 1
[0039] Embodiment 1: see figure 1 Shown is the longitudinal cross-sectional schematic diagram of the multi-band optical perfect absorber based on the metal film layer-semiconductor resonant cavity composite structure in this embodiment, which includes a substrate, a metal reflective layer, a semiconductor resonant cavity layer and a metal resonant cavity layer arranged in sequence from bottom to top. film layer. The metal light-reflecting layer in this embodiment constitutes the reflective and opaque layer of the absorber, and the semiconductor resonant cavity layer and the metal film layer constitute the resonant composite structural unit that the absorber produces a strong electromagnetic resonance effect. By optimizing the design such as figure 2 The shown semiconductor resonant cavity layer and metal film layer can obtain perfect absorption of multi-band light of preset wavelength bands. At the same time, the metal film layer can be used as a perfect conductive layer to ...
Embodiment 2
[0040] Embodiment 2: the longitudinal sectional view of this embodiment can refer to figure 1 , top view diagram see figure 2 , which differs from Embodiment 1 mainly in that the semiconductor resonant cavity layer in this embodiment forms a two-dimensional periodic array structure. participate image 3 The multi-band light perfect absorption formed by it can form perfect light absorption for incident light with different polarization directions, thereby further improving the light absorption performance and photoelectric response efficiency of the absorber under different electromagnetic polarization environments.
Embodiment 3
[0041] Embodiment 3: see Figure 4 Shown is the light absorption diagram of the multi-band optical perfect absorber based on the metal film layer-semiconductor resonant cavity composite structure in this embodiment. The metal material is gold, the semiconductor material is single crystal silicon, and the thickness of the metal substrate and the thickness of the metal film layer are 100nm and 20nm respectively. The semiconductor resonant cavity is a cylindrical structure with a diameter of 400nm and a cylinder height of 380nm. The semiconductor resonant cavity array is arranged in a triangle, and the period size is 500nm. In the near-infrared band, there are four light absorption peaks, and the maximum light absorption rate reaches 98%. The minimum absorption rate also exceeds 92%. Such an excellent light absorption effect is obtained on the basis that the structure is 100% covered by a 20nm-thick metal film layer, which forms a huge contrast with the inherent high light ref...
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