31results about How to "Avoid the introduction of impurities" patented technology

The invention discloses a method for production of durene by pseudocumene alkylation. The method includes: raw material gasification mixing, alkylation reaction, gas-oil-water separation, refining, freezing crystallization filtration and squeezing, wherein a radial fixed bed reactor is employed for alkylation reaction of pseudocumene. The invention also provides the radial fixed bed reactor used by the above method. The method for production of durene by pseudocumene alkylation has the advantages of: high catalyst activity and long service life, high product selectivity, high production safety, few alkylation by-product, stable finished product quality, low consumption of raw and auxiliary materials, long equipment service life, and is suitable for large-scale industrial production.

The invention relates to a microwave steam explosion device which comprises a feed-inlet ball valve, a steam explosion tank, a buffer vessel, and a gas condensation and recovery system, wherein the steam explosion tank is sleeved with a microwave oven cavity, the steam explosion tank is provided with a pressure gauge, a thermometer and a safety valve, and the steam is fed into the gas condensation and recovery system. The microwave oven cavity adopts an integral control system and a staggered and resonant arrangement design on industrial double-magnetrons, continuous output microwaves are obtained by using a high frequency close-loop feedback and magnetron anode current control mode, and through contactless infrared temperature control and contactless optical pressure monitoring, the real-time display of a pressure-temperature-time-power curve and a temperature-pressure-time curve can be realized on an ultra-large touch LCD (liquid crystal display) screen. The device provided by the invention has the advantages that the stream indirect heating is replaced with the microwave direct heating, so that 4 / 5 of the heating time is shortened, therefore, the problem of high energy consumption existing the existing steam explosion technology can be solved, and the requirements of solid materials such as foods and traditional Chinese medicines, and the like for water quality are satisfied; and in addition, because of adopting automatic control, the device is easy to operate, and has good economic and application prospects.

The invention discloses an aging method of a distilled spirit. The method comprises the following steps: wine liquid storage, wine steam introduction and temperature control and storage. According to the method disclosed by the invention, the wine storage temperature can be controlled by introducing wine steam, physical reaction and chemical reaction of a wine can be accelerated, the aging of the wine can be promoted, the storage time can be greatly reduced, and the foreign flavor, mud flavor, distilled grain flavor and bitter taste of wine liquid also can be removed so as to ensure that a wine body is soft and pure and is harmonious in taste.

The invention provides TiAl alloy powder and a preparation method and application thereof, and belongs to the technical field of metal powder. The TiAl alloy powder comprises, by mass percent, 34%-35%of Al, 4.5%-5.1% of Nb, 2.4%-2.7% of Cr, 0-0.02% of Gd, larger than 0 and not larger than 150 ppm of C, larger than 0 and not larger than 200 ppm of N, larger than 0 and not larger than 100 ppm of H,larger than 0 and not larger than 700 ppm of O and the balance Ti. The TiAl alloy powder is spherical, the particle size ranges from 40 micrometers to 106 micrometers, fluidity ranges from 10.0 s / 50g to 20.0 s / 50 g, and the hollow sphere rate is not larger than 0.5%.

The invention discloses an AlGaN thin film with an in-situ SiN dislocation annihilation layer and an epitaxial growth method of the AlGaN thin film. The method comprises the steps that an AlN film layer is grown on a sapphire substrate in an epitaxial mode; a first AlGaN thin film layer is grown on the AlN film layer in an epitaxial mode; a dislocation pit is formed in the first AlGaN thin film layer through hydrogen corrosion; a SiN dislocation annihilation layer is deposited on the surface of the dislocation pit in situ; a second AlGaN thin film layer is epitaxially grown on the SiN dislocation annihilation layer. According to the method, the dislocation pits are etched in the first AlGaN thin film layer and then SiN in-situ filling is carried out; on one hand, the second AlGaN thin filmlayer and the subsequent film layer can be synchronously subjected to graphical processing in the growth process; the problems that an epitaxial wafer is taken out to be subjected to a complex etching process and impurities are introduced when the epitaxial wafer is taken out to be etched are solved; on the other hand, the SiN dislocation annihilation layer is of an island-shaped distribution structure corresponding to the same dislocation pit, and therefore the structure is more beneficial to growth and healing of the second AlGaN thin film layer.

The invention discloses a sodium sulfite solution preparation tank for chlor-alkali and a preparation system, belonging to the technical field of preparation of sodium sulfite solution for chlor-alkali. In the present invention, after the protective gas connection port is set on the preparation tank body, the protective gas can be passed into the preparation tank body after being connected with the protective gas supply device, thereby reducing the oxidation of the sodium sulfite solution during the preparation process. Moreover, since the sodium sulfite solution in the configuration process will not be oxidized, the configured sodium sulfite solution can be directly stored in the configuration tank body without the need to separately set up a special storage tank structure, and it can be stored for a long time; therefore, since there is no storage tank structure, and can be stored for a long time, so the volume of the preparation tank body can be increased to reduce the frequency of preparation. At the same time, the main part of the entire preparation tank body can be installed below the ground to avoid manual transportation to high places and reduce labor intensity.

The invention discloses a method for preparing a revolving body of high-strength and high-purity carbon / carbon composite material by winding. The method comprises: 1. preparing a mandrel; 3. Perform chemical vapor deposition densification on dry yarn prefabricated parts to form deposition parts; 4. Repeat dry yarn winding process and chemical vapor deposition densification process to form carbon / carbon densification parts; 5. Carbon / carbon densification parts are treated at high temperature Obtain a high-temperature treatment part; 6. Prepare a pyrolytic carbon or silicon carbide coating on the surface of the high-temperature treatment part after demoulding to obtain a carbon / carbon composite material revolving body. The present invention adopts the method of graded winding molding-chemical vapor infiltration densification, which shortens the gas diffusion path of chemical vapor infiltration densification, thereby avoiding the phenomenon that the surface density of the deposit body increases faster than that of the interior, and improves the rotation of carbon / carbon composite materials. The bonding strength of the interface between the bulk layers improves the quality and purity of the product, and is used in photovoltaics, semiconductors and other fields.

The invention is applicable to the technical field of semiconductor and provides a method for preparing single-layer graphene on the surface of ultranano diamond. The method comprises preprocessing anultranano diamond film to eliminate surface impurities and surface stress; forming a metal layer on the nucleation surface of the preprocessed ultranano diamond film, wherein the metal layer is composed of a nickel layer and a copper layer on the upper surface of the nickel layer or is a copper-nickel alloy layer; performing high-temperature annealing treatment on the ultranano diamond film withthe grown metal layer to self-organize the single-layer graphene. The method for preparing the single-layer graphene on the surface of the ultranano diamond saves a second transfer process by directlygrowing the single-layer graphene on the ultranano diamond film, thereby effectively avoiding introduced impurities and lattice imperfection during second transfer processes; meanwhile, the grown single-layer graphene is small in lattice mismatch and surface change.

The invention proposes a method for processing a silicon-based substrate, comprising: obtaining a silicon wafer; chemically treating the silicon wafer to form a hydrogen passivation layer on the surface of the silicon wafer; performing a desorption process on the silicon wafer to remove hydrogen passivation layer. According to the silicon-based substrate processing method of the embodiment of the present invention, after the silicon wafer is chemically treated, a hydrogen passivation layer is formed on the surface of the silicon wafer, which can effectively protect the silicon wafer. Moreover, the desorption temperature of the hydrogen passivation layer is relatively low, thereby effectively reducing the problem of bending damage and introducing impurities caused by the high-temperature desorption of the passivation layer on the silicon wafer. Moreover, when selecting a silicon wafer, optimize the silicon Chip screening standards, thereby effectively reducing the flatness of silicon-based substrates, improving the processing quality of silicon-based substrates, and facilitating the processing of large area array devices.

The invention discloses a method-static shearing method for detecting the kiln coating suspension performance of a fireproof brick for a cement kiln, and a principle, equipment, a sample, steps and result calculation thereof. The static shearing method is low in experimental expense, strong in operability and quantizable, especially the shearing position is proper, the data is stable and good in repeatability in the shearing range, the influence caused by errors is greatly reduced, the practical kiln coating suspension performance of the fireproof brick for the cement kiln can be really reflected, the conventional fireproof material detection equipment is made full use of, and the conventional performance detection method for the fireproof brick is further improved.

The invention provides a TiAl alloy powder and its preparation method and application, belonging to the technical field of metal powder. The TiAl alloy powder includes the following elements by mass percentage: Al: 34%-35%, Nb: 4.5%-5.1%, Cr: 2.4%-2.7%, Gd: 0-0.02%, C: greater than 0 and not greater than 150ppm, N: more than 0 and not more than 200ppm, H: more than 0 and not more than 100ppm, O: more than 0 and not more than 700ppm, the balance being Ti; the TiAl alloy powder is spherical, with a particle size of 40μm-106μm, flowing The resistance is 10.0~20.0s / 50g, and the hollow ball rate is not more than 0.5%.

The invention discloses a 6N rotary target material and a preparation method thereof. The preparation method comprises the following steps that the surface of a 6N copper raw material is polished andthen subjected to acid pickling for 10-20 min through a mixed solution, then the 6N copper raw material is washed with clear water and ethyl alcohol in sequence and dried, and a pretreated copper rawmaterial is obtained; the pretreated copper raw material is preheated for 1-3h at the temperature of 400-600 DEG C, smelted at the temperature of 1100-1200 DEG C, heated to 20-100 DEG C after completemelting to be subjected to overheating heat preservation for 10-20min, and then subjected to pouring and cooling to obtain a copper rod; and the copper rod is fixed by a die to be subjected to chambering for 4-6 times through a drilling machine, and the 6N rotating target material is obtained. The invention further discloses the 6N rotating target material prepared by the method. The preparationmethod is simple and easy to operate, the 6N rotating target material with low impurity content can be prepared, and the problems that in the prior art, mechanical stress and impurities are prone to being generated, grain gaps are large, and the production cost is high are effectively solved.

The invention relates to the technical field of pharmaceutical preparations, and specifically discloses a compound electrolyte injection and a preparation method thereof. The preparation method is as follows: adding L-malic acid, magnesium chloride, sodium chloride, potassium chloride, calcium chloride, sodium acetate and sodium hydroxide in the prescribed quantity into the water for injection prepared with a total volume of 70-80% in sequence , stir and dissolve, heat to boil, keep for 10min-20min, add water for injection to the total amount of preparation, filter through multi-stage polyethersulfone filter elements with successively smaller pore diameters, fill, and sterilize to obtain compound electrolyte injection. The present invention prepares the compound electrolyte injection (II) with significantly reduced impurity types and contents through a one-step preparation method, which significantly improves the storage stability of the injection, and the impurity content does not increase significantly in the stability investigation test, and at the same time, The production process is greatly simplified, the production efficiency is improved, the production cost is reduced, the industrialized production is facilitated, and the invention has broad application prospects.

The invention discloses a preparation tank and a preparation system for a sodium sulfite solution used for the chlor-alkali industry, and belongs to the technical field of preparing sodium sulfite solutions used for the chlor-alkali industry. The main body of the preparation tank is provided with a protective gas connection port, and protective gas can be fed into the main body of the preparationtank after the connection port is connected to a protective gas supply device, thereby reducing the oxidation situation during a sodium sulfite solution preparation process. In addition, since the sodium sulfite solution is not oxidized during the preparation process, the prepared sodium sulfite solution can be directly stored in the main body of the preparation tank, a special storage tank structure separately arranged is not needed and long-time storage can be achieved, and therefore, the frequency of preparation can be reduced by increasing the volume of the main body of the preparation tank. The main body part of the preparation tank can be installed underground to avoid the need of manual transportation to a high place and reduce the labor intensity.

The invention discloses an AlGaN film with an in-situ SiN dislocation annihilation layer and an epitaxial growth method thereof. The steps of the method include: epitaxially growing an AlN film on a sapphire substrate; epitaxially growing a first AlGaN thin film layer; using hydrogen gas to etch dislocation pits on the first AlGaN thin film layer; in-situ depositing a SiN dislocation annihilation layer on the surface of the dislocation pit; epitaxially growing a second dislocation annihilation layer on the SiN dislocation annihilation layer AlGaN thin film layer. In the present invention, by corroding dislocation pits on the first AlGaN thin film layer and then performing SiN in-situ filling, on the one hand, the second AlGaN thin film layer and subsequent film layers can be patterned synchronously during the growth process, It avoids the problem of taking out the epitaxial wafer for complex etching process and introducing impurities during taking out the etching; on the other hand, since the SiN dislocation annihilation layer is an island-like distribution structure corresponding to the dislocation pit, this structure is more conducive to Growth healing of the second AlGaN film layer.

The invention discloses an atomization assembly applied to an opening of a container. The atomization assembly comprises a first air inlet pipeline, a liquid inlet pipeline, a mist outlet pipeline, a U-shaped air inlet pipeline and an atomization separation chamber, wherein the first air inlet pipeline is connected with one end of the U-shaped air inlet pipeline; the liquid inlet pipeline and the atomization separation chamber mutually communicate with the other end of the U-shaped air inlet pipeline; and the atomization separation chamber communicates with the mist outlet pipeline. The invention further discloses an atomization device. The atomization device comprises the sealable container and the atomization assembly. With the adoption of the U-shaped air inlet pipeline, the atomization assembly disclosed by the invention is compact in structure and capable of being arranged at the opening of the container. Therefore, on one hand, the structure is simplified, the occupied volume of the device is greatly reduced, and assembly steps are simplified; and on the other hand, the atomization assembly is disposable, thus the safety of liquid use is greatly improved.

The invention discloses a method for preparing a vertical cavity on an LTCC substrate, which can improve the quality of the vertical cavity and improve the performance of the vertical cavity. This method first selects the diaphragm A, film B, and diaphragm C; then cuts the film B into a film D; cuts and removes the part that is consistent with the length and width of the film D on the diaphragm C; then selects a certain number of diaphragms A is stacked one by one, and the film C and film D are put in during the stacking process; the laminated multi-layer film is pressed into a dense block; the block is cut with a cutting knife, and the block is cut after the cutting is completed. Excess dicing and film D are removed to form the desired vertical cavities. This method is to press the laminated multi-layer diaphragm into a dense block and then cut to form a vertical cavity. This method can greatly improve the quality of the vertical cavity and avoid the introduction of The problem of impurities and pollution is improved, the performance of the vertical cavity is improved, and it is suitable for popularization and application in the technical field of LTCC ceramic substrates.