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Method for preparing copper-tungsten alloy doped graphene

A technology of copper-tungsten alloy and graphene, which is applied in metal processing equipment, coating, transportation and packaging, etc., can solve the problems of rough copper layer structure, reduced electrical conductivity, and poor vacuum discharge performance of materials, so as to achieve easy industrial production, The effect of improving the uniformity of the structure and improving the mechanical properties

Inactive Publication Date: 2018-11-27
XI AN JIAOTONG UNIV
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Problems solved by technology

[0004] Powder metallurgy is a traditional method for preparing contact materials. The copper and tungsten two-phase distribution of the material prepared through the process of ball milling, cold pressing, and infiltration is extremely uneven, and there will be a large number of copper-enriched areas, and the vacuum discharge performance of the material is poor.
The dispersion of graphene in the matrix has a significant impact on the performance of the doped material, but the wettability of graphene and copper-tungsten materials is poor. If the dispersion of graphene is uneven or even a large amount of graphene agglomerates together, the performance will even deteriorate
Some people try to plate various metals on graphene to solve the problem. The newly introduced metals usually react with the substrate: such as nickel plating, the process is complicated and the pollution is large. Not only at 1060 ° C, tungsten and nickel will react to form Ni 4 W, NiW, NiW 2 The brittle phase affects the overall performance of the alloy, and the introduction of a large amount of nickel will produce nickel-copper, nickel-tungsten, nickel-graphene interfaces. The existence of the interface will have an adverse effect on the electrical and thermal conductivity of the material. Two-dimensional defects reduce vacuum electrical breakdown properties of materials
In addition, the surface of graphene is complex and easy to agglomerate. Usually, the metal plated on the surface of graphene is adhered to the graphene in the form of particles and is not completely wrapped, so that the complete isolation of graphene and tungsten cannot be achieved. powder will react with carbonaceous materials to generate W 2 C and WC, although the presence of carbides will increase the hardness of the composite, but significantly reduce the electrical conductivity
Some people also use copper-plated tungsten powder to prepare copper-tungsten alloy, but the pretreatment of tungsten powder will be catalyzed by metal palladium, which is extremely expensive, and the deposited copper layer has a rough structure, uneven wrapping, part of the tungsten powder exposed, and a large number of holes. The problem

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  • Method for preparing copper-tungsten alloy doped graphene
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  • Method for preparing copper-tungsten alloy doped graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] A graphene / W70Cu30 alloy with a graphene mass fraction of 1 wt% with a size of Φ21 × 5 mm was prepared.

[0067] Weigh 11.95g of tungsten powder with a particle size of 2 to 9 μm, put it in a pre-prepared 25wt% sodium hydroxide solution for ultrasonic cleaning for 20min to remove the oil stain on the surface of the tungsten powder; Clean 3 times to remove the residual sodium hydroxide solution on the surface of the tungsten powder; put it into pre-configured 30wt% hydrochloric acid for ultrasonic cleaning for 20 minutes to remove some metal impurities in the tungsten powder and roughen the surface of the tungsten powder, which is conducive to the deposition of copper ; Wash 3 times with deionized water for use; finally transfer to 0.4 mg / mL PVP solution for surface treatment to form copper nucleation sites, wash with deionized water for 3 times before use.

[0068] Weigh 40g of potassium sodium tartrate, 30g of EDTA-2Na, 45mg of 2,2-bipyridine, and 20g of copper sulfate...

Embodiment 2

[0077] A graphene / W80Cu20 alloy with a graphene mass fraction of 0.5 wt% with a size of Φ21 × 5 mm was prepared.

[0078] Weigh 20.48g of tungsten powder with a particle size of 2 to 9 μm, put it in a pre-prepared 25wt% sodium hydroxide solution for ultrasonic cleaning for 20min to remove the oil stain on the surface of the tungsten powder; centrifuge to separate the solid from the liquid, use deionized water Clean 3 times to remove the residual sodium hydroxide solution on the surface of the tungsten powder; put it into pre-configured 30wt% hydrochloric acid for ultrasonic cleaning for 20 minutes to remove some metal impurities in the tungsten powder and roughen the surface of the tungsten powder, which is conducive to the deposition of copper ; Wash 3 times with deionized water for use; finally transfer to 0.4 mg / mL PVP solution for surface treatment to form copper nucleation sites, wash with deionized water for 3 times before use.

[0079] Weigh 50g of potassium sodium tart...

Embodiment 3

[0086] A graphene / W90Cu10 alloy with a graphene mass fraction of 0.1 wt% with a size of Φ21 × 5 mm was prepared.

[0087] Weigh 46.08g of tungsten powder with a particle size of 2 to 9 μm, put it in a pre-prepared 25wt% sodium hydroxide solution for ultrasonic cleaning for 20min to remove the oil stain on the surface of the tungsten powder; Clean 3 times to remove the residual sodium hydroxide solution on the surface of the tungsten powder; put it into pre-configured 30wt% hydrochloric acid for ultrasonic cleaning for 20 minutes to remove some metal impurities in the tungsten powder and roughen the surface of the tungsten powder, which is conducive to the deposition of copper ; Wash 3 times with deionized water for use; finally transfer to 0.4 mg / mL PVP solution for surface treatment to form copper nucleation sites, wash with deionized water for 3 times before use.

[0088]Weigh 40g of potassium sodium tartrate, 30g of EDTA-2Na, 45mg of 2,2-bipyridine, and 20g of copper sulfat...

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Abstract

The invention discloses a method for preparing copper-tungsten alloy doped graphene. The method comprises the following steps: uniformly and quantitatively depositing a layer of copper on the surfaceof tungsten powder, and modifying the surface state of copper-plated tungsten powder and graphene respectively with PVA and PVP; sufficiently stirring in a liquid medium to sufficiently mix the copper-plated tungsten powder and graphene, and performing cold-press molding and hog-press sintering to obtain the graphene doped copper-tungsten alloy. The method can be used for improving the wetting performance of the sintering process, and the chemical, electrical, thermal and other performance of the alloy prepared by the method are greatly improved in comparison with those of alloy prepared by atraditional method, the vacuum ablation performance is promoted when the alloy is applied to an electrical contact, the service life of the contact is prolonged, and the ablation can be more uniform.

Description

technical field [0001] The invention relates to a preparation method of copper-tungsten alloy doped graphene which is applied to the field of electrical materials and improves the comprehensive performance of ultra-high voltage switches. Background technique [0002] Cu of FCC has a very low solid solubility in W of BCC, and neither dissolves nor forms intermetallic compounds at room temperature, which is a typical pseudo-alloy. Therefore, CuW alloy not only maintains the high electrical and thermal conductivity of Cu, but also possesses the high strength, high melting point and low thermal expansion coefficient of W, and is widely used in various industrial fields, such as medium-voltage and high-current vacuum switches, integrated circuit leads frame and engine combustion chamber lining materials, etc. [0003] Graphene's electron mobility (1.5×104cm2 / V·s), thermal conductivity (5×103W / m·K) and its mechanical properties (Young's modulus 1TPa, tensile strength 130GPa) are ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C27/04B22F1/02B22F3/14B22F1/00
CPCC22C1/05C22C27/04B22F3/14B22F2998/10B22F1/102B22F1/14B22F1/17B22F2003/247B22F3/02
Inventor 宋忠孝魏书恒薛佳伟李雁淮丁飞高波刘洋洋南仁兵雷明远杜晓晔赖旭
Owner XI AN JIAOTONG UNIV
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