AlGaN film with in-situ SiN dislocation annihilation layer and epitaxial growth method of AlGaN film

Abstract

The invention discloses an AlGaN thin film with an in-situ SiN dislocation annihilation layer and an epitaxial growth method of the AlGaN thin film. The method comprises the steps that an AlN film layer is grown on a sapphire substrate in an epitaxial mode; a first AlGaN thin film layer is grown on the AlN film layer in an epitaxial mode; a dislocation pit is formed in the first AlGaN thin film layer through hydrogen corrosion; a SiN dislocation annihilation layer is deposited on the surface of the dislocation pit in situ; a second AlGaN thin film layer is epitaxially grown on the SiN dislocation annihilation layer. According to the method, the dislocation pits are etched in the first AlGaN thin film layer and then SiN in-situ filling is carried out; on one hand, the second AlGaN thin filmlayer and the subsequent film layer can be synchronously subjected to graphical processing in the growth process; the problems that an epitaxial wafer is taken out to be subjected to a complex etching process and impurities are introduced when the epitaxial wafer is taken out to be etched are solved; on the other hand, the SiN dislocation annihilation layer is of an island-shaped distribution structure corresponding to the same dislocation pit, and therefore the structure is more beneficial to growth and healing of the second AlGaN thin film layer.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to an AlGaN film with an in-situ SiN dislocation annihilation layer and an epitaxial growth method thereof. Background technique [0002] At present, AlGaN, as one of the important representatives of the third-generation new wide-bandgap semiconductor materials, has the characteristics of wide direct bandgap, high breakdown voltage, large electron saturation velocity, high temperature resistance, and radiation resistance, so AlGaN materials and low The three-dimensional quantum structure has incomparable advantages over traditional semiconductor materials in the production of ultraviolet detectors, ultraviolet LEDs, ultraviolet-infrared two-color detector devices and high-frequency microwave power devices, and has important applications in the fields of optoelectronics industry, biomedical industry, and national defense industry. The prospect is the key basic material to...

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Problems solved by technology

[0005] The object of the present invention is to provide an AlGaN thin film with an in-situ SiN dislocation annihilation layer and its epitaxial growth method, which is used to solve the problem of complex etching process and easy introduction of impurities in AlGaN materials in the prior art when patterning The problem

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