The invention belongs to the technical field of quaternary chalcogenide semiconductor materials, and specifically discloses a Cu 2 ZnB 2 S 3 Nanorods were prepared as follows: under an inert atmosphere, copper acetylacetonate, zinc acetate, bismuth nitrate, and trioctylphosphine oxide were mixed in a stoichiometric ratio to form a complex, and then the sulfur precursors dodecanethiol and t-dodecylphosphine oxide were added. Alkylthiol, reacted for 1 to 3 hours, and separated to obtain the Cu 2 ZnB 2 S 3 Nano stave. Compared with the existing quaternary chalcogenide semiconductor materials, the photocatalytic performance of the nanorods of the present invention is improved. The present invention provides a kind of brand-new Cu 2 ZnB 2 S 3 Nanorods can be used in photocatalysis, photovoltaics, and photodiode sensor materials, and have good application prospects in the manufacture of LEDs, integrated circuits, transistors, and semiconductor lasers.