Cu2ZnBi2S3 nano-rod and application thereof

A nanorod, reaction technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of fast compounding of quaternary semiconductors, unreported quaternary chalcogenide semiconductors, poor stability, etc. problem, to achieve the effect of photocatalytic performance improvement, cost reduction, and good photocatalytic activity

Active Publication Date: 2020-05-15
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the synthesis of colloidal quaternary chalcogenides containing Cu (copper), Zn (zinc), In (indium), Ga (gallium) or Sn (tin) has been reported in the literature, the quaternary sulfur containing Bi (bismuth) family of semiconductors has not been reported so far
Moreover, the existing quaternary semiconductors that can be used for photocatalysis are limited by factors such as fast photoelectron hole-carrier recombination and poor stability.
Therefore, there is an urgent need for the emergence of new compounds with excellent properties that have not been reported.

Method used

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  • Cu2ZnBi2S3 nano-rod and application thereof
  • Cu2ZnBi2S3 nano-rod and application thereof
  • Cu2ZnBi2S3 nano-rod and application thereof

Examples

Experimental program
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Embodiment 1

[0033] First, mix copper acetylacetonate, zinc acetate, bismuth nitrate and trioctylphosphine oxide (TOPO) in a stoichiometric ratio of 2:1:1 in an inert environment at 150-200°C to form a metal complex compound.

[0034] Then, at 125-140 ° C, according to the mass ratio of 120,000 mercaptan (DDT) and t-dodecyl mercaptan (t-DDM) sulfur precursors mixed into the reactor, 1- After 3 hours, centrifugation was performed.

[0035] Finally, the volume ratio of isopropanol and chloroform was controlled to be 1:1 for dispersion, and nanocrystals were separated.

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Abstract

The invention belongs to the technical field of quaternary chalcogenide semiconductor materials, and particularly discloses a Cu2ZnBi2S3 nano-rod. The preparation method comprises the following steps:in an inert atmosphere, mixing copper acetyl acetonate, zinc acetate, bismuth nitrate and trioctyl phosphine oxide according to a stoichiometric ratio to form a complex, then adding sulfur precursors: dodecyl mercaptan and tert-dodecyl mercaptan, reacting for 1-3 hours, and separating to obtain the Cu2ZnBi2S3 nano-rod. Compared with an existing quaternary chalcogenide semiconductor material, thephotocatalytic performance of the nano-rod is improved. The brand-new Cu2ZnBi2S3 nano-rod provided by the invention can be applied to photocatalysis, photovoltaic and photodiode sensor materials, andhas a good application prospect in manufacturing of LEDs, integrated circuits, transistors and semiconductor lasers.

Description

technical field [0001] The invention belongs to the technical field of quaternary chalcogenide semiconductor materials, and more specifically relates to a Cu 2 ZnB 2 S 3 Chalcogenide nanorods and their applications. [0002] technical background [0003] Functional nanomaterials, as an emerging product, have received widespread attention, so there are more and more demands for their functions. Based on a single nanomaterial and preparation process, more products need to be developed to meet the above needs. [0004] Heterogeneous nanostructured nanomaterials as well as unconventional multi-component materials have received extensive attention and applications. Due to their unique properties, colloidal semiconductor nanocrystals have been increasingly studied in the past few decades. There have been related reports using these nanocrystals for photocatalytic and photovoltaic applications. CdTe and CuIn are currently widely used in photovoltaic thin films 1- x Ga x Se ...

Claims

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Application Information

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IPC IPC(8): C01G9/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G9/006C01P2002/84C01P2002/85C01P2004/03C01P2004/16
Inventor 佤基点·杰努瓦埃泽尔·阿金诺古冯柯米夏埃尔·吉尔斯西
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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