Preparation method of core-shell InP/ZnS nanorods

A core-shell structure, nanorod technology, applied in nanotechnology, nano-optics, nanotechnology and other directions, can solve the problems of high laser emission threshold, limited application fields, and quantum dots have no linear polarization absorption and polarization emission, etc. Effects of laser emission threshold, suppression of radiative recombination, large linearly polarized absorption and polarized emission

Active Publication Date: 2017-02-22
TCL CORPORATION
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing InP / ZnS nanorods with a core-shell structure, aiming to solve the problem that traditional quantum dots have no linear polarization absorption and polarization emission, and the laser emission threshold is high, resulting in limited application fields.

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  • Preparation method of core-shell InP/ZnS nanorods

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[0014] The embodiment of the present invention provides a method for preparing InP / ZnS nanorods with a core-shell structure, comprising the following steps:

[0015] S01. Under an inert atmosphere, mix indium chloride or indium oxide, trioctylphosphine oxide, dodecylamine and trioctylphosphine to obtain a mixed solution, and heat and degas the mixed solution under vacuum conditions to degas the degassed solution. The gaseous mixed solution is heated to 170-270°C under an inert atmosphere until a transparent indium precursor solution is formed;

[0016] S02. Under an inert atmosphere, mix and treat tris(trimethylsilyl)phosphine, diphenyl ether and biphenyl to prepare a tris(trimethylsilyl)phosphine precursor;

[0017] S03. Under an inert atmosphere, after raising the temperature of the indium precursor solution to 290-320°C, inject the tris(trimethylsilyl)phosphine precursor into the indium precursor solution, and then adjust the temperature to 295-305°C, react to obtain InP n...

Embodiment 1

[0033] A preparation method of InP / ZnS nanorods of core-shell structure, comprising the following steps:

[0034] S11. Under an inert gas atmosphere, mix 0.45 mmol of indium chloride, 0.1 mmol of trioctyl phosphine oxide, 0.2 mmol of dodecylamine and 9 mmol of trioctyl phosphine, then heat the mixture to 120°C under vacuum and Degas for 30mins, and then heat the degassed mixed solution to 230°C under an inert atmosphere until a transparent solution is formed to obtain an indium precursor solution;

[0035] S12. Under an inert gas atmosphere, mix 0.45mmol tris(trimethylsilyl)phosphine, 0.05mmol diphenyl ether and 0.05mmol biphenyl through an oscillator to obtain a tris(trimethylsilyl)phosphine precursor;

[0036] S13. In an inert gas atmosphere, raise the temperature of the indium precursor to 310°C, then quickly inject the tris(trimethylsilyl)phosphine precursor into the indium precursor solution, then adjust the heating temperature to 300°C, and obtain InP after 120s Nanorod...

Embodiment 2

[0039] A preparation method of InP / ZnS nanorods of core-shell structure, comprising the following steps:

[0040] S21. Under an inert gas atmosphere, mix 0.5 mmol of indium oxide, 0.1 mmol of trioctyl phosphine oxide, 0.2 mmol of dodecylamine and 7.5 mmol of trioctyl phosphine, then heat the mixture to 160°C under vacuum and Degassing for 25mins, and then heating the degassed mixed solution to 250°C under an inert atmosphere until a transparent solution is formed to obtain an indium precursor solution;

[0041] S22. Under an inert gas atmosphere, mix 0.6mmol tris(trimethylsilyl)phosphine, 0.06mmol diphenyl ether and 0.06mmol biphenyl through an oscillator to obtain a tris(trimethylsilyl)phosphine precursor;

[0042] S23. In an inert gas atmosphere, raise the temperature of the indium precursor to 300°C, then quickly inject the tris(trimethylsilyl)phosphine precursor into the indium precursor solution, then adjust the heating temperature to 298°C, and obtain InP after 200s Nan...

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Abstract

The invention provides a preparation method of core-shell InP / ZnS nanorods, comprising: in inert atmosphere, mixing indium chloride or indium oxide, trioctyl phosphine oxide, dodecylamine and tri-n-octylphosphine to obtain mixed liquid, heating and degassing in vacuum, heating in the inert atmosphere to form transparent indium precursor solution; in inert atmosphere, preparing tris(trimethylsilyl)phosphine precursor with tris(trimethylsilyl)phosphine, diphenyl ether and biphenyl; in inert atmosphere, heating the indium precursor solution to 290-320 DEG C, injecting the tris(trimethylsilyl)phosphine precursor into the indium precursor solution, adjusting the temperature to 295-305 DEG C, and reacting to obtain an InP nanorods; in inert atmosphere, injecting zinc fatty acid and 1-dodecanethiol into InP nanorod solution under heating to prepare the core-shell InP / ZnS nanorods.

Description

technical field [0001] The invention belongs to the field of display technology and relates to quantum dot synthesis technology, in particular to a method for preparing InP / ZnS nanorods with a core-shell structure. Background technique [0002] Quantum dots are semiconductor nanostructures that bind conduction band electrons, valence band holes, and excitons in three spatial directions. As a high-energy-efficiency, wide-color gamut luminescent material, quantum dots have a wide range of applications. Including lighting, display, solar energy conversion, and molecular and cell imaging, etc., especially in the field of display has received a high degree of attention and research. [0003] The preparation method of quantum dots has a great influence on its performance. Among them, the semiconductor colloidal nanocrystals prepared by the wet chemical method have excellent optical properties, high light color purity, high luminous quantum efficiency, adjustable luminous color, ...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/70B82Y20/00B82Y40/00
Inventor 刘政杨一行曹蔚然钱磊向超宇
Owner TCL CORPORATION
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