The invention discloses a
silicon-based InGaAs PIN photoelectric
detector based on heterogeneous integration and vertical
optical coupling. The
silicon-based InGaAs PIN photoelectric
detector comprises a
silicon-on-insulator (SOI) substrate, a vertical
coupling grating, a
benzocyclobutene (BCB) bonding layer, an anti-reflecting layer, a first
conductivity type
indium phosphide layer, an intrinsic InGaAs layer and a second
conductivity type
indium phosphide layer, wherein the vertical
coupling grating is produced in top silicon of the
SOI substrate, the BCB bonding layer is covered on the vertical
coupling grating, the anti-reflecting layer is located above the BCB bonding layer, the first
conductivity type
indium phosphide layer is located above the anti-reflecting layer, the intrinsic InGaAs layer is located above the first conductivity type
indium phosphide layer, the second conductivity type
indium phosphide layer is located above the intrinsic InGaAs layer, the vertical coupling grating is produced by
etching the top silicon of the
SOI substrate, the
etching depth is 70-110 nm, the grating period is 600-680 nm, and the
refractive index of the anti-reflecting layer is between refractive indexes of the BCB bonding layer and the first conductivity type
indium phosphide layer. According to the silicon-based InGaAs PIN photoelectric
detector, by means of an adhesiveness
bonding process, InP / InGaAs / InP stack material
layers are adhered to the grating which is etched on the
SOI substrate, so that light and the InP / InGaAs / InP
layers are vertically coupled, and suitable designs and prioritization schemes are provided for specific applications of the silicon-based InGaAs PIN photoelectric detector.