84 results about "Aluminum phosphide" patented technology

Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is substantially oriented by the Si substrate, depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice, and disposing a layer of diamond onto the semiconductor layer. The base layer may include numerous materials, including, without limitation, aluminum phosphide (AlP), boron arsenide (BAs), gallium nitride (GaN), indium nitride (InN), and combinations thereof. Additionally, the method may further include removing the lattice-orienting Si substrate and the base layer from the semiconductor layer. In one aspect, the Si substrate may be of a single crystal orientation.

The invention discloses aluminum oxide rich in pentacoordinate and a synthesis method and application of the aluminum oxide. The synthesis method of the aluminum oxide rich in pentacoordinate includes: dissolving soluble aluminum salt with an organic complexing agent in deionized water to form a clarification solution; heating and stirring the clarification solution until a viscous glue is formed;heating and activating the viscous glue so that the organic complexing agent complexed on the aluminum ion is decomposed by heat and then cooled naturally to room temperature to obtain aluminum oxideprecursor powder rich in pentacoordinate; roasting the aluminum oxide precursor powder in the oxygen atmosphere to enable the aluminum ion to be oxidized to aluminum oxide; removing the carbon material remaining on the aluminum oxide surface and formed by the decomposition of the organic complexing agent by combustion to obtain the aluminum oxide powder rich in pentacoordinate. The aluminum oxidepowder contains a large number of pentacoordinate aluminum oxide phases, thus having a large number of oxygen vacancies, and a high-loading monatomic catalyst is obtained by riveting metal atoms through the oxygen vacancies of an aluminum oxide carrier rich in pentacoordinate.

The invention discloses an aluminum phosphide fumigant convenient to handle, comprising aluminum phosphide raw powder, ammonium carbamate, a binding agent, a disintegrating agent and an inertial filler, wherein among the materials, by weight, the binding agent accounts for 3-8% and includes one or more of polyethylene glycol, povidone and hydroxypropyl cellulose; the disintegrating agent accountsfor 2-6% and includes sodium carboxymethyl. The aluminum phosphide fumigant has no influence on the fumigating effect, and has high slag treatment rate; the binding agent and the disintegrating agentare harmless to the environment and human body, is more environmentally friendly, has stable properties, is easy to obtain, and has low cost.

The invention discloses a preparation method of an aluminum-phosphorus alloy for hypereutectic aluminum-silicon modification. The preparation method comprises the following steps that (1) the industrial pure aluminum is molten, and the temperature of the molten aluminum is adjusted to 1400 DEG C to 2000 DEG C; (2) the aluminum phosphide particles are pressed into molten aluminum, and the content of phosphorus in the aluminum phosphide accounts for 1-10% of the total mass of the molten aluminum; (3) aluminum phosphide is pressed into molten aluminum, and preserving heat for 2-10 minutes, the phosphorus-containing aluminum melt is obtained; and the phosphorus-containing aluminum melt is poured into a metal groove made by the steel plate to prepare the aluminum-phosphorus alloy sheet. The preparation method has the advantages of being simple in process and easy to operate, and can be used as the hypereutectic aluminum-silicon alloy to refine the primary modifier, the primary crystal silicon refining effect is good, and pollution to the environment is avoided.