Rapid synthesis method of indium phosphide polycrystalline material and multi-tubular quartz phosphorus bubble thereof

A technology for polycrystalline materials and synthesis methods, which is applied in the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth, etc., can solve the problems of impurity pollution, uneven melt ratio, long synthesis time, etc. The effect of increased area, increased contact area, and high purity of crystal synthesis

Inactive Publication Date: 2013-03-13
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method uses multi-tube quartz phosphorus bubbles to realize the rapid multi-tube phosphorus injection synthesis technology, which solves the problems of long synthesis time, uneven melt ratio and impurity pollution in the original synthesis technology, and realizes the fast and efficient synthesis of indium phosphide materials. High-purity synthesis, and easier InP single crystal growth

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  • Rapid synthesis method of indium phosphide polycrystalline material and multi-tubular quartz phosphorus bubble thereof
  • Rapid synthesis method of indium phosphide polycrystalline material and multi-tubular quartz phosphorus bubble thereof
  • Rapid synthesis method of indium phosphide polycrystalline material and multi-tubular quartz phosphorus bubble thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Rapid synthesis method of indium phosphide polycrystalline material Synthesize 3.0kg near-stoichiometric InP polycrystalline material, the specific operation steps are:

[0040] In the first step, in order to remove the contamination of raw materials by packaging and other factors, the surface of indium is lightly etched with MOS grade dilute hydrochloric acid, and then boiled and cleaned with deionized water several times to remove oxides and residual impurities on the surface of indium to ensure The high-purity indium used in the experiment has a purity of 6N, and the surface is free of dust and other impurities. The cleaned indium is baked in a vacuum oven for about 30 minutes and set aside;

[0041] In the second step, the double-tube quartz phosphorus bubbles containing 6N phosphorus are loaded into the phosphorus source furnace, and two phosphorus bubbles are used for synthesis. The phosphorus source furnace is wound with molybdenum wire and is in the shape of a qu...

Embodiment 2

[0054] Rapid synthesis method of indium phosphide polycrystalline material Synthesize 3.0kg phosphorus-rich InP polycrystalline material, the specific operation steps are:

[0055] In the first step, in order to remove the contamination of raw materials by packaging and other factors, the surface of indium is lightly etched with MOS grade dilute hydrochloric acid, and then boiled and cleaned with deionized water several times to remove oxides and residual impurities on the surface of indium to ensure The high-purity indium used in the experiment reaches 6N purity, and the surface is free of dust and other impurities. The cleaned indium is baked in a vacuum oven for about 30 minutes, and set aside.

[0056] In the second step, the double-tube quartz phosphorus bubbles containing 6N phosphorus are loaded into the phosphorus source furnace, and two phosphorus bubbles are used for synthesis. The phosphorus source furnace is wound with molybdenum wire and is in the shape of a quart...

Embodiment 3

[0067] Rapid synthesis method of indium phosphide polycrystalline material Synthesize 3.0kg near-stoichiometric InP polycrystalline material, the specific operation steps are:

[0068] In the first step, in order to remove the contamination of raw materials by packaging and other factors, the surface of indium is lightly etched with MOS grade dilute hydrochloric acid, and then boiled and cleaned with deionized water several times to remove oxides and residual impurities on the surface of indium to ensure The high-purity indium used in the experiment has a purity of 6N, and the surface is free of dust and other impurities. The cleaned indium is baked in a vacuum oven for about 30 minutes and set aside;

[0069] In the second step, the double-tube quartz phosphorus bubbles containing 6N phosphorus are loaded into the phosphorus source furnace, and two phosphorus bubbles are used for synthesis. The phosphorus source furnace is wound with molybdenum wire and is in the shape of a qu...

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Abstract

The invention discloses a rapid synthesis method of an indium phosphide polycrystalline material, which comprises the following steps of: (I) performing surface cleaning treatment on indium; (II) placing a multi-tubular quartz phosphorus bubble with phosphorus into a phosphorus source furnace; (III) placing the pre-designed thermal insulation system, heater, crucible with indium, phosphorus source furnace and seed crystal and B2O3 into a high-pressure single-crystal furnace hearth; (IV) vacuumizing the inside of the furnace and filling high-purity argon; (V) heating to vaporize phosphorus in the phosphorus bubble and injecting into indium melt, and reacting to generate indium phosphide; and (VI) growing crystal. The multi-tubular quartz phosphorus bubble comprises a quartz phosphorus container, at least two quartz phosphorus bubble tubes and a quartz cover. By adopting a multi-tubular quartz phosphorus bubble, the method disclosed by the invention realizes a rapid multi-tubular phosphorus injection synthesis technology, solves the problems of long synthesis time, non-uniform melt proportioning, impurity pollution and the like in the original technology, realizes rapid, efficient and high-purity synthesis of the indium phosphide material, and performs InP single crystal growth more easily.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a synthesis method of indium phosphide polycrystalline material. Background technique [0002] Indium phosphide (InP) is a III-V compound semiconductor material composed of group III element indium (In) and group V element phosphorus (P). It has a very important strategic position in the field of semiconductor materials and is the current optoelectronic device. and irreplaceable semiconductor materials for microelectronic devices. Compared with germanium and silicon materials, InP has many advantages: direct transition energy band structure, high electro-optical conversion efficiency; high electron mobility, easy to make semi-insulating materials, suitable for making high-frequency microwave devices and circuits; working temperature High; strong radiation resistance; high conversion efficiency as a solar cell material. Therefore, materials such as InP are widely used in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B28/10
Inventor 孙聂枫孙同年杨瑞霞杨帆李晓岚
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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