The invention is a
cathode ternary alloy film and a method for preparing
coating-film dipped proliferation
cathode, which relates to the technology of
microwave electric-vacuum device manufacturing. The
cathode ternary alloy film is a film of
tungsten-
rhenium-
osmium ternary alloy. The method for preparing the
coating-film dipped proliferation cathode comprises the following steps: A. before dipping an emitting material, a
rhenium film is sputtered and deposited on the surface of cathode by adopting a surface
sputtering method; an
osmium-
tungsten film is sputtered and deposited; next, the emitting material is dipped; by utilizing a high-temperature dipping process of the emitting material, the alloying of the cathode
surface film is realized; B. after dipping the emitting material, the film of
tungsten-
rhenium-
osmium ternary
alloy is sputtered and deposited on the surface of the cathode by utilizing tungsten-rhenium-osmium ternary
alloy target. The cathode prepared by the cathode ternary
alloy film of the invention can enhance the density of current emitted by the cathode in a several-fold manner, and the emitting capacity of cathode is greatly improved; various specifications can be prepared in a comparatively easy way and
batch production can be realized easily. The cathode of the invention can be applied to various electric-vacuum devices, and also can be used in to electronic tubes of TV and electronic microscopes.