Cathode three-element alloy film and method for preparing film covered dipping diffusion cathode

A ternary alloy and alloy film technology, which is applied in the manufacture of cold cathodes, electrode systems, solid thermionic cathodes of discharge tubes, etc., can solve the problem of low increase in cathode emission level, achieve an increase in emission current density, and be easy to prepare Effect

Active Publication Date: 2008-12-31
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the problem of low cathode emission level improvement in the field of film-impregnated diffusion cathode manufacturing technology by proposing a cathode ternary alloy film and preparing a film-impregnated diffusion cathode

Method used

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  • Cathode three-element alloy film and method for preparing film covered dipping diffusion cathode
  • Cathode three-element alloy film and method for preparing film covered dipping diffusion cathode
  • Cathode three-element alloy film and method for preparing film covered dipping diffusion cathode

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Embodiment approach 1

[0025] Embodiment 1: Before impregnating the emitting material, use a Re target to sputter-deposit a 0.3-0.4 micron thick Re film on the surface of the cathode to obtain the first layer of film; then use an Os-W (55:45wt%) target to deposit 0.3-0.4 micron The second layer of Os-W film is obtained; next, the emission material is impregnated, and the high-temperature impregnation process of the emission material is used to fully diffuse between the two films on the cathode surface, between the film and the cathode substrate, and realize the alloying of the cathode surface film layer .

Embodiment approach 2

[0026] Embodiment 2: After impregnating the emitting material, use a ternary alloy target with a composition ratio of W45-65wt%: Re25-45wt%: Os10-30wt% to sputter-deposit W-Re-Os with a thickness of 0.5-0.8 microns on the surface of the cathode Ternary alloy film.

[0027] It is generally believed that among the existing film-coated impregnated diffusion cathodes, the impregnated diffusion cathode coated with Os-W binary alloy film has the relatively highest emission level. In order to illustrate the emission capability of the cathode of the present invention, an impregnated diffusion cathode coated with an Os-W binary alloy film is specially selected for comparison. The cathode preparation and comparative experiments are as follows:

example 1

[0028] Example 1: Diffusion cathode impregnated with Os-W binary alloy film

[0029] Experimental conditions: the cathode substrate 11 is a tungsten sponge with a pore size of 24%, and the diameter of the substrate is 2.5 mm; the cathode substrate and the molybdenum support tube 21 are brazed at high temperature (2050° C. × 1 minute) with a molybdenum-ruthenium solder; Put it into the molybdenum support cylinder 21, fill it with alumina filler 61, and sinter at a high temperature of 1650°C for 3 minutes; the emission material 41 is BaO:CaO:Al 2 o 3 The molar ratio is 6:1:2 aluminate (abbreviated as 612 aluminate), and the 612 aluminate is adjusted into a paste with nitrocellulose and coated on the cathode emission surface, and then impregnated at a high temperature in a hydrogen furnace (1600 ° C × 30 second), repeat 4 times until the cathode substrate 11 is saturated with salt; remove the remaining salt stains on the surface of the cathode by mechanical polishing and chemica...

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Abstract

The invention is a cathode ternary alloy film and a method for preparing coating-film dipped proliferation cathode, which relates to the technology of microwave electric-vacuum device manufacturing. The cathode ternary alloy film is a film of tungsten-rhenium-osmium ternary alloy. The method for preparing the coating-film dipped proliferation cathode comprises the following steps: A. before dipping an emitting material, a rhenium film is sputtered and deposited on the surface of cathode by adopting a surface sputtering method; an osmium-tungsten film is sputtered and deposited; next, the emitting material is dipped; by utilizing a high-temperature dipping process of the emitting material, the alloying of the cathode surface film is realized; B. after dipping the emitting material, the film of tungsten-rhenium-osmium ternary alloy is sputtered and deposited on the surface of the cathode by utilizing tungsten-rhenium-osmium ternary alloy target. The cathode prepared by the cathode ternary alloy film of the invention can enhance the density of current emitted by the cathode in a several-fold manner, and the emitting capacity of cathode is greatly improved; various specifications can be prepared in a comparatively easy way and batch production can be realized easily. The cathode of the invention can be applied to various electric-vacuum devices, and also can be used in to electronic tubes of TV and electronic microscopes.

Description

technical field [0001] The invention relates to the technical field of microwave electric vacuum device manufacture, and relates to a cathode ternary alloy film and a method for preparing a film-impregnated diffusion cathode. Background technique [0002] In the field of microwave electric vacuum device manufacturing technology, film-impregnated diffusion cathode (referred to as M-type cathode) is a commonly used cathode. It is characterized in that the emissive material (barium aluminate) is impregnated and stored inside the porous tungsten sponge (cathode substrate), and a layer of noble metal or alloy (Os, Os-Ru, Os-W, Os-Ru, Os-W, Ir, W-Ir, etc.) film. [0003] With the continuous development of microwave electric vacuum devices in the direction of high power and high frequency, the cathode is required to be able to draw a higher current density. However, the conventional film-impregnated diffusion cathode can effectively draw a DC current density of only 3-5A at 950°C....

Claims

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Application Information

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IPC IPC(8): H01J1/146H01J1/20H01J9/02
Inventor 阴生毅张永清张洪来王宇
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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