The invention provides a method for preparing a PMOS
pipe which can improve the negative-
temperature instability. In the prior art, when a
silicon nitride etching and stopping layer is prepared,
hydrogen-
silicon keys which are formed in
silicon nitride by adopting
nitrogen with higher temperature and larger flow are less, thus, the
hydrogen on an interface is easy to diffuse, and consequently, the PMOS
pipe has the phenomenon by the influence of NBT1 that the Vt excursion is larger, and Idsat is larger. The method for preparing the PMOS
pipe comprises the following steps: the trap injection is firstly carried out; next, a grid insulating layer, a grid and a lightly doped drain structure are prepared; then, the side wall of the grid and a source-drain
electrode are prepared; and next, the
silicon nitride etching and stopping layer is prepared, wherein the flow range of the
nitrogen is from 0 to 10
standard state milliliters / minute, the
aggradation temperature range is from 390 to 410 DEG C, then,
metal front media is prepared, and a
contact hole is prepared according to the
silicon nitride etching and stopping layer; and finally, a
metal plug and a
metal layer are prepared. The negative-
temperature instability of the PMOS pipe can be obviously improved by the method of the invention, and the Vt excursion and the Idsat of the PMOS pipe are correspondingly reduced.