Process for plasma strengthening type chemical vapour phase deposition treatment

Abstract

The invention relates to a plasma-strengthening chemical gas phase aggradation method and is used in depositting film on the surface of the semiconductor wafer. It includes: stabilization, inputting the premonitory gas into the reaction kettle; aggradation, inputting the radio frequency energy, premonitory gas and reacton gas into the reaction kettle; passivation, stopping inputting the reaction gas but still inputting the readio frequency energy; and air bleeding, turning off the radio frequency energy, stopping inputting the premonitory gas and pumping the remaining gas out of the reaction kettle. During the passivation, the radio frequency energy is same with or less than that in the aggradation and we still input the premonitory gas for 3 to 15 minutes. Because the invention adds the passivation to it makes the Si which does not react with other on the surface of the wafer continue reacting till the end, it can eliminate the incomplete surface reaction and hanging keys, thus avoids the protuberant block in the film, eliminates the disadvantage and increases the yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma-enhanced chemical vapor deposition (PECVD) treatment method. Background technique [0002] In the semiconductor manufacturing process, in order to make discrete devices and integrated circuits, different types of thin films need to be deposited on the wafer substrate. Among methods for depositing thin films, plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition) is a commonly used method. The method uses energy to enhance the CVD reaction, and in addition to the thermal energy of the general CVD system, additional plasma energy is added. [0003] FIG. 1 shows a schematic diagram of a common device for PECVD method, and the PECVD device is a PECVD reactor. As shown in FIG. 1 , the reaction furnace 100 is made of cylindrical glass or aluminum, and the upper and lower ends are sealed with aluminum plates. There ar...

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Problems solved by technology

These bumps will cover up other fatal defects and unopened vias, which may eventually lead to many defects, such as surface leakage and reliability failure, that is, time-dependent dielectric breakdown (TDDB, time dependent dielectric breakdown)

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