Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lifting mechanism of physical gas-phase deposition

A technology of physical vapor deposition and lifting mechanism, which is applied in the field of lifting mechanism, can solve the problem that the charge cannot be released, and achieve the effect of reducing wear and tear

Inactive Publication Date: 2007-04-04
CHUNGHWA PICTURE TUBES LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Therefore, the main purpose of the present invention is to provide a claw applied to a physical vapor deposition device to improve the problem that the traditional ceramic claw cannot be released due to long-term friction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lifting mechanism of physical gas-phase deposition
  • Lifting mechanism of physical gas-phase deposition
  • Lifting mechanism of physical gas-phase deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] As mentioned earlier, before the physical vapor deposition manufacturing process, all glass substrates need to be loaded into the heating chamber for a preheating action. After the glass substrates are heated, the glass substrates are sent to each sputtering chamber for processing. The substrate film-forming work, and these actions all use ceramic hooks to lift the glass substrate and place it on the glass substrate bearing seat.

[0027] Please refer to FIGS. 2 and 3. FIG. 2 is a top view of the ceramic hook 80 of the present invention, and FIG. 3 is a side view of the ceramic hook 80 of the present invention. As shown in FIGS. 2 and 3, the ceramic hook 80 of the present invention includes a ceramic body 82 and a metal plate 84. The ceramic main body 82 includes a front end and a rear end, and the metal plate 84 is connected to the front end of the ceramic main body 82 in a detachable and fixed manner by using at least one Phillips flat head screw 86. In addition, the high...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A kind of physics gas phase aggradation promotion and demotion organization, it includes a glass board load base, a promotion and demotion device which is fixed in both ends of the glass board load base, and a falcula which is linked in the promotion and demotion device. The falcula includes a ceramic main body, the ceramic main body includes one fore-end and one trailing end, an electric conduction film covers in the surface of the ceramic main body, and a metal plate links in the fore-end of the ceramic main body.

Description

Technical field [0001] The invention relates to a physical vapor deposition device, in particular to a lifting mechanism applied to the physical vapor deposition device. Background technique [0002] Physical vapor deposition (PVD) technology is a kind of thin film deposition technology carried out by physical deposition process, which is widely used in thin film transistor liquid crystal display (TFT LCD), plasma display panel (PDP) and semiconductor manufacturing processes, such as As known in the industry, physical vapor deposition can be roughly divided into two forms: evaporation and sputtering. Among them, the vapor deposition uses resistance or electron beam to heat a vapor deposition source, and then uses the saturated vapor pressure of the vapor deposition source at a high temperature to deposit the thin film. In sputtering, the heavier inert elements, such as argon (Ar+) ions, are accelerated to hit the metal target by the potential gradient, so that the metal atoms of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/56
Inventor 徐文懋欧政霖林信宏
Owner CHUNGHWA PICTURE TUBES LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products