38results about How to "Small diffusivity" patented technology

The present invention relates to a flexible color filter substrate and to a method for manufacturing same. More particularly, the present invention relates to a flexible color filter substrate and method for manufacturing same, the flexible color filter substrate comprising a flexible substrate and R, G, B patterns formed on the flexible substrate. The R, G, B patterns are formed by a phase-change ink composition.

The invention relates to a regenerating method for an Al / Al2O3 part of a TD / DRM process of a semiconductor 8-inch wafer film process. The method comprises the steps that dry ice particles are sprayedand cleaned to regenerate the surface of the part; local temperature difference change formed by thermal energy absorption of dry ice during a sublimation process is used to generate a 'shear stress'between a substrate and a cleaned object, and the cleaned object is quickly peeled off from the surface of the substrate; a Venturi nozzle can generate a carbon dioxide gas stream containing more dryice particles; ultrasonic assisted supercritical CO2 cleaning regenerates the inner surface, the chamber and the groove of the part; and supercritical CO2 easily penetrates into the micropores and thechamber or groove of the part to dissolve pollutants, so that the pollutants migrate fast in supercritical CO2 to achieve the purpose of cleaning. Ultrasonic assisting further improves the cleaning effect and efficiency. The regeneration time and cost are shortened. The regenerating method has the advantages of simple process, environmental protection, being pollution-free and good regeneration effect, does not damage the semiconductor part, and has no impact on the performance of the part.

The present invention relates to a flexible color filter substrate and to a method for manufacturing same. More particularly, the present invention relates to a flexible color filter substrate and method for manufacturing same, the flexible color filter substrate comprising a flexible substrate and R, G, B patterns formed on the flexible substrate. The R, G, B patterns are formed by a phase-change ink composition.

The invention provides a transistor and a formation method thereof. The formation method of the transistor comprises: providing a semiconductor substrate, wherein the surface of the semiconductor substrate is provided with a plurality of separating layers, openings are formed between neighboring separating layers, the bottoms of the openings are provided with threshold voltage adjusting layers, and the threshold voltage adjusting layers are internally provided with doped ions; forming barrier layers on the surfaces of the threshold voltage adjusting layers and channel layers on the surfaces of the barrier layers, wherein the channel layers are at intrinsic states, and the barrier layers are used for preventing penetration by the doped ions in the threshold voltage adjusting layers; forming grid structures on the surfaces of the channel layers, wherein the surfaces of the grid structures are flush with the surfaces of the separating layers; removing the separating layers until the semiconductor substrate is exposed; and after the separating layers are removed, forming a doping layer on the surface of the semiconductor substrate at the two sides of the threshold voltage adjusting layers, the separating layers, the channels layers and the grid structures, wherein the surface of the doping layer is not lower than the surfaces of the channel layers. The formed transistor is lower in power consumption and stable in performance.

A process for extracting and refining lavender oil includes such steps as supercritical CO2 extracting, temp-controlled three-stage rectifying for lowering pressure, analyzing for further lowering pressure, and regulating the temp of CO2 to remove wax.

The invention provides a low-diffusivity liquid crystal mixture which is particularly suitable for producing TN, IPS and FFS type liquid crystal display devices in a novel ODF liquid crystal injection process.

The invention discloses a reverberatory furnace for sacrificial anode production, which belongs to the field of reverberatory furnaces. A reverberatory furnace for sacrificial anode production includes a protective reverberatory furnace. The left end of the protective reverberatory furnace is fixed with a diversion control gas plate through expansion bolts, which can The gas filled in the protective reverberatory furnace is restrained and guided by the telescopic diversion arc to reduce its diffusivity so that it can be fully utilized by the combustion flame and reduce its contact with the metal material on the lower side of the protective reverberatory furnace The probability of metal materials being oxidized reduces the probability of metal materials being oxidized, thereby effectively suppressing the generation of flue gas while reducing the oxidation loss of metal materials, reducing the waste of metal materials, and reducing the production cost of sacrificial anodes, thus improving its performance. Economic benefits, and the self-regulation of the restraint ability of the telescopic drainage arc through the gas self-temperature adjustment system reduces the difficulty of controlling process parameters and improves the production efficiency of the protective reverberatory furnace.