53results about How to "Simple removal process" patented technology

The invention provides a removing method for a photo resist image in the forming process of a double inlaying structure; the forming process of the double inlaying structure comprises the following steps: a semiconductor substrate with a preformed semiconductor device is provided; a metal interconnecting line layer with a surface which is provided with a dielectric layer is formed on the substrate; connecting holes are etched in the dielectric layer; a sacrificial layer and a hard mask layer are deposited; a bottom anti-reflecting layer and a photo-resist layer are coated and patterned to form the photo resist image; oxy plasma incinerates and removes the bottom anti-reflecting layer and the photo-resist layer. The removing method of the invention can simplify the removing process and prevent the dielectric layer with a low dielectric constant from being damaged.

The invention discloses a method and system for electrochemically reducing hardness of wastewater. The method comprises the following steps: introducing pretreated wastewater into an electrochemical hardness removal device for electrolysis, then carrying out a reaction with dispersed carbon dioxide to obtain hardness-removed wastewater, and then carrying out solid-liquid separation to obtain hardness-removed water. The electrochemical hardness removal device comprises a closed electrolytic tank, and a cathode and an anode are arranged inside or outside the electrolytic tank. According to the method for electrochemically reducing the hardness of the wastewater, provided by the invention, metal cations such as Ca<2+> and Mg<2+> in the wastewater can be effectively removed by adding nothing or adding a small amount of chemical reagents in the treatment process; and the hardness removal method has little influence on the whole sewage treatment system, the burden of the downstream sewage treatment system can be effectively reduced, and the treated water can be further treated or directly utilized according to requirements.

The invention discloses a formation method of a semiconductor structure. The method comprises the steps of providing a semiconductor substrate which comprises a first region and a second region, forming a first gate structure on the semiconductor substrate in the first region, forming a second gate structure on the semiconductor substrate in the second region, forming a first photoresist layer covering the semiconductor substrate in the second region and the second gate structure, forming a second photoresist layer covering the semiconductor substrate in the first region and the first photoresist layer, performing shallow doping ion implantation on the semiconductor substrate on the two sides of the first gate structure in the first region by taking the second photoresist layer as a barrier layer, and forming a first shallow doping region in the semiconductor substrate on the two sides of the first gate structure. The method is suitable for forming a shallow doping region.

The invention provides a method for preparing temperature-control hydrogenation catalyst and an application in chemigum hydrogenation. The method of the invention uses a metal catalyst having a formula of MaXmLb to realize the hydrogenation of butyronitrile latex and recycle noble metal by the following technical scheme, wherein M is rhodium, X is Cl and L is phosphine compound. The technical scheme comprises the steps of: adding chemigum, solvent, catalyst and trivalence phosphine compound into a reaction device, using a hydrogen substitution system, pressurizing to 0.5 to 5 Mpa, heating to 100 to 175 DEG C, keeping temperature for 3 to 24 hours, adding polyethylene glycol and n-heptane into the resultant of reaction after finishing reaction, stirring 30 min, standing, layering, and then taking out the chemigum solution on upper layer, wherein the solution on lower layer contains the separated catalyst. The method of the invention ensures the chemigum hydrogenation catalyst having a fine temperature-control separating effect and improves the hydrogenation effect of the catalyst so the hydrogenation degree of the prepared chemigum is higher.

The invention discloses etching medicinal liquid which comprises the following raw materials in parts by weight: 10-20 parts of organic acid and 70-90 parts of deionized water. The etching medicine liquid is used for etching an aluminum substrate, the aluminum substrate is good in roughening effect, oil can be removed at the same time, and the oil removal process is simplified; and the etching medicine liquid can be removed only by heating, has no toxic or harmful effect on the periphery in a high-temperature state, and is good in environmental protection. According to a roughening treatment method of the aluminum substrate, the etching medicine liquid is used for etching and roughening, the process is simple, the roughening effect is good, the excessive etching medicine liquid can be volatilized and removed by heating, the removal process is simple, and an alkaline washing neutralization process is not needed.

The invention provides a wafer grinding method. The wafer grinding method includes the steps that a wafer is provided and comprises a functional face and a back face opposite to the functional face; after a protective layer is formed on the functional face of the wafer, the protective layer is covered with a layer of protective adhesive tape; then, the wafer is placed on a grinding device, the back face of the wafer is ground so that the portion, with the partial thickness, of the wafer can be removed; and the protective adhesive tape is removed, and then the protective layer is removed. Before grinding, the protective layer is formed on the functional face of the wafer, and then the protective layer is covered with one layer of protective adhesive tape. In the grinding process of the protective adhesive tape, the structure on the functional face of the wafer can be effectively protected against damage in the grinding process, the protective adhesive tape is pasted on the protective layer, the situation that the protective adhesive tape makes contact with the functional face of the wafer can be effectively avoided, and therefore in the process of tearing off the adhesive tape after the grinding technology, the protective adhesive tape can remove defects of parts on the surface of the functional face of the part of the wafer, and structural damage on the functional face of the wafer is reduced.

The invention provides a removing method for a photo resist image in the forming process of a double inlaying structure; the forming process of the double inlaying structure comprises the following steps: a semiconductor substrate with a preformed semiconductor device is provided; a metal interconnecting line layer with a surface which is provided with a dielectric layer is formed on the substrate; connecting holes are etched in the dielectric layer; a sacrificial layer and a hard mask layer are deposited; a bottom anti-reflecting layer and a photo-resist layer are coated and patterned to formthe photo resist image; oxy plasma incinerates and removes the bottom anti-reflecting layer and the photo-resist layer. The removing method of the invention can simplify the removing process and prevent the dielectric layer with a low dielectric constant from being damaged.

The invention relates to a method for removing heavy metals in stainless steel pickling wastewater. In this method, an anion exchange membrane and a cation exchange membrane are combined to form a double-membrane three-chamber electrodialysis cell, the middle chamber is between the anion and yang membranes, the anode chamber is on the one side of the anion membrane, and the cathode chamber is on the one side of the cation membrane. Add stainless steel pickling wastewater to the intermediate chamber, add dilute nitric acid to the anode chamber, and add complexing agent to the cathode chamber. With stainless steel as the cathode and graphite as the anode, direct current is applied. Under the action of an electric field, the selective permeability of the ion exchange membrane to anions and cations is used, so that the heavy metal ions in the wastewater are enriched in the cathode chamber in the form of metal complex anions, and the acid radical anions are enriched in the anode chamber. The method has the characteristics of simple operation and easy control of process parameters. It can not only remove heavy metal ions in stainless steel pickling wastewater, but also enrich and recover heavy metal ions.

The invention provides a method for preparing seaweed nutrition powder rich in fucoidin. The method comprises the steps that clean seaweed is chosen and washed with water repeatedly, washing water and the seaweed are collected, the washing water is colated and adsorbed, then the washing water and the clean seaweed are subjected to defibrination, degradation and solvent extraction, and seaweed components from which heavy metals are removed are homogenated, neutralized, concentrated and dried to obtain the seaweed nutrition powder rich in the fucoidin. According to the method, functional components such as the fucoidin, iodine and mannitol in kelp, which can be dissolved in water and can runoff easily during washing, are reserved fully; and different suitable heavy metal-removing methods are adopted respectively based on characteristics of different components, so that the heavy metal-removing effects are guaranteed, and nutrient loss caused by unsuitable removing methods is also avoided.

The present invention provides a method for quickly removing protium in tritiated hydrogen isotope gas, which comprises the following steps in turn: a. Leak rate inspection of the palladium retention method for reducing the protium, charging to 1.5 MPa, and keeping the pressure for 60 minutes; b. Purifying pretreatment before; c, purification treatment; d, post-treatment. By adopting the rapid removal method for protium in tritium-containing hydrogen isotope gas of the present invention, it is possible to obtain tritium-containing hydrogen isotope gas with low content of protium.

The invention discloses a high-temperature cycle removal method for carbon dioxide based on a rotary fixed bed. The fixed bed rotor filled with calcium-based absorbent rotates to the high-temperature flue gas side channel, and CO2 in the flue gas is removed by the calcium-based absorbent filler and forms CaCO3, after removing CO2, the flue gas is discharged, and CaO is converted into CaCO3 through carbonation reaction; the fixed bed rotor continues to carry the packing that has been converted into CaCO3 to rotate to the fuel gas side channel, and the fuel gas and pure oxygen are passed into this area for combustion and The released heat provides heat for the decomposition of CaCO3, releasing high-concentration CO2, and then CO2 is discharged from the reaction zone and is stored or used for other purposes, and CaCO3 is decomposed and regenerated into CaO; the fixed-bed rotor after the regeneration of the internal filler re-rotates to capture the flue gas The CO2 in the flue gas is separated, and the rotor and the filled absorbent packing are used to periodically pass through the flue gas side and the fuel gas side to complete the CO2 cycle removal and enrichment in the flue gas.

The invention provides a method for preparing leuprorelin. The method comprises the following steps: (1) taking Fmoc-Pro-CTC-OH and CTC (Carbon Tetrachloride) resin as starting raw materials and treating to obtain Fmoc-Pro-CTC-OH resin; (2) sequentially connecting the Fmoc-Pro-CTC-OH resin with an amino acid with a protecting group by adopting a gradual coupling manner of a Fmoc / tBu solid-phase method to synthesize side chain wholly-protected leuprorelin precursor peptide-resin; (3) taking a 20 percent trifluoroethanol / DCM (Dichloromethane) solution as a cutting reagent and cutting the side chain wholly-protected leuprorelin precursor peptide-resin, so as to obtain a side chain wholly-protected leuprorelin precursor peptide; (4) carrying out ethyl amination on the side chain wholly-protected leuprorelin precursor peptide to obtain side chain wholly-protected leuprorelin; (5) carrying out side chain cutting on the side chain wholly-protected leuprorelin to obtain a leuprorelin crude peptide; (6) carrying out CM purification and HPLC (High Performance Liquid Chromatography) purification, concentration, dissolving and freeze-drying on the leuprorelin crude peptide to obtain a high-purity leuprorelin crude drug. The method provided by the invention has the advantages of simplicity in operation, short period, low cost, high product yield and small environment pollution and is very suitable for industrial production.