Method for removing photoresist graphical in forming process of dual embedded structure

Abstract

The invention provides a removing method for a photo resist image in the forming process of a double inlaying structure; the forming process of the double inlaying structure comprises the following steps: a semiconductor substrate with a preformed semiconductor device is provided; a metal interconnecting line layer with a surface which is provided with a dielectric layer is formed on the substrate; connecting holes are etched in the dielectric layer; a sacrificial layer and a hard mask layer are deposited; a bottom anti-reflecting layer and a photo-resist layer are coated and patterned to form the photo resist image; oxy plasma incinerates and removes the bottom anti-reflecting layer and the photo-resist layer. The removing method of the invention can simplify the removing process and prevent the dielectric layer with a low dielectric constant from being damaged.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing photoresist patterns during the formation of a dual damascene structure. Background technique [0002] Today's semiconductor device manufacturing technology is developing rapidly, semiconductor devices already have a deep submicron structure, and integrated circuits contain a huge number of semiconductor components. In such large-scale integrated circuits, high-performance, high-density connections between components are not only interconnected in a single interconnect layer, but also interconnected between multiple layers. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on each other with an interlayer insulating film interposed therebetween for connecting semiconductor elements. Especially the multi-layer interconnect structure formed by the dual-damasce...

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Problems solved by technology

This process is not only complicated, but also easily destroys the low dielectric constant dielectric layer 16, which increases the dielectric constant of this layer and affects device performance.

Moreover, since the material of the sacrificial layer is mostly BARC or silicon-rich polymer, it is easy to generate polymer residue 23 on the inner wall of the connection hole of the dielectric layer 16 when etching the sacrificial layer, which seriously affects the subsequent process.

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