Wafer grinding method

Abstract

The invention provides a wafer grinding method. The wafer grinding method includes the steps that a wafer is provided and comprises a functional face and a back face opposite to the functional face; after a protective layer is formed on the functional face of the wafer, the protective layer is covered with a layer of protective adhesive tape; then, the wafer is placed on a grinding device, the back face of the wafer is ground so that the portion, with the partial thickness, of the wafer can be removed; and the protective adhesive tape is removed, and then the protective layer is removed. Before grinding, the protective layer is formed on the functional face of the wafer, and then the protective layer is covered with one layer of protective adhesive tape. In the grinding process of the protective adhesive tape, the structure on the functional face of the wafer can be effectively protected against damage in the grinding process, the protective adhesive tape is pasted on the protective layer, the situation that the protective adhesive tape makes contact with the functional face of the wafer can be effectively avoided, and therefore in the process of tearing off the adhesive tape after the grinding technology, the protective adhesive tape can remove defects of parts on the surface of the functional face of the part of the wafer, and structural damage on the functional face of the wafer is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a wafer grinding method. Background technique [0002] With the development of science and technology, the functions of electronic products continue to increase, while the size continues to decrease. In the field of semiconductor device manufacturing, the size of semiconductor devices is continuously reduced, and the size of electronic chips is continuously reduced. [0003] For this reason, in the semiconductor device manufacturing process, after many semiconductor devices are formed on the functional surface of the wafer, the wafer back grinding process (Back Grinding, referred to as BG) is performed, and the back surface corresponding to the functional surface of the wafer is ground using a planarization process. Part of the thickness of the wafer is removed to reduce the thickness of the subsequently formed chip. [0004] In the process of grinding the back of the wafer, a lay...

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Problems solved by technology

[0004] In the process of grinding the back of the wafer, a layer of protective tape (BGtape) will be covered on the functional surface of the wafer first to avoid contamination of the functional surface of the wafer caused by impurities generated during the process of grinding the back of the wafer, and to avoid contamination of the functional surface of the wafer. The function directly contacts the grinding equipment (such as the suction cup used to fix the wafer) and causes damage to the functional surface of the wafer, thereby reducing the quality of the formed chip

[0005] However, even so, after the wafer BG process, after removing the protective tape on the functional surface of the wafer, it was found that the functional surface of the wafer was still damaged (Peeling), which affected the chip quality

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