The invention belongs to the technical field of
semiconductor devices, a trench type CoolMOS, which sequentially includes a back
metal layer, an N+ substrate, an N epitaxial layer, a P well region, an n+ source region, an insulating layer and a front
metal layer from bottom to top; A number of super junction trenches penetrating the N+ substrate are provided on the N+ substrate, one end of the super junction trench extends to the N-epitaxial layer, and the super junction trench is filled with P-type
silicon; the P-well region is provided with a penetrating P-well A number of gate trenches in the N+ region and the n+ source region, one end of the gate trench extends to the N-epitaxial layer, the gate trench is filled with polysilicon, and the polysilicon and the gate trench are set by a
gate oxide interval; the n+ source region A plurality of contact holes are provided through the n+ source region and the insulating layer, one end of the
contact hole extends to the P-well region, the contact holes are filled with conductive
metal, and the conductive metal is in contact with the front metal layer. The front adopts a gate trench structure, and the back is dug and filled with P-type
silicon to achieve the effect of multiple implantation and
diffusion of P-type ions.