30results about How to "Reduce electron concentration" patented technology

The invention discloses a programming method for a semiconductor device and the semiconductor device. The semiconductor device includes a memory string, the memory string includes a plurality of first memory cells and first dummy cells stacked in sequence, each of the first memory cells is correspondingly connected to a word line, and the first dummy cells The gate of the first memory cell is connected to the first dummy word line; the method includes: in the precharge phase, inputting a precharge voltage to the word line corresponding to the programmed memory cell in the plurality of first memory cells, the programmed memory cell The unit is a storage unit between the storage unit to be programmed and the first dummy unit among the plurality of first storage units; in a programming phase, a programming voltage is input to a word line corresponding to the storage unit to be programmed. The embodiment of the present invention can reduce program disturb and increase boost potential.

An insulating film is provided over one surface of a first semiconductor layer including a first oxide semiconductor including indium as a main component, and a second semiconductor layer including an i-type second oxide semiconductor is provided in contact with the other surface. The energy difference between a vacuum level and a Fermi level in the second oxide semiconductor is larger than that in the first oxide semiconductor. In the first semiconductor layer, a region in the vicinity of the junction surface with the second oxide semiconductor which satisfies the above condition is a region having an extremely low carrier concentration (a quasi-i-type region). By using the region as a channel, the off-state current can be reduced. Further, a drain current of the FET flows through the first oxide semiconductor having a high mobility; accordingly, a large amount of current can be extracted.

The invention relates to the field of semiconductor devices, and provides a HEMT device with a sandwich grid medium structure and a preparation method thereof. The HEMT device includes a substrate, a buffer layer arranged on the substrate, a GaN layer arranged on the buffer layer, a barrier layer, a source electrode, and a drain electrode that are arranged on the GaN layer, a passivation layer arranged on the source electrode, the drain electrode, and the barrier layer except a groove, a first dielectric layer coating the groove surface and the passivation layer surface, a second dielectric layer arranged on the first dielectric layer, a third dielectric layer arranged on the second dielectric layer and the first dielectric layer except the second dielectric layer, a gate electrode in contact with the third dielectric layer, a source electrode pad in contact with the source electrode, and a drain electrode pad in contact with the drain electrode, wherein one side, far away from the GaN layer, of the barrier layer is provided with the groove, and the second dielectric layer contains fluorinion. The high-threshold voltage normally off operation of the HEMT device can be realized, and the breakdown voltage of the device can be effectively improved.

A high-quality ZnMgBeO film disclosed by the invention is prepared by virtue of a plasma-assisted molecular beam epitaxy method. The method comprises the following steps of placing a cleaned substrate in a molecular beam epitaxy device, heating the substrate to 400-700 DEG C; by adopting oxygen plasma formed through radio frequency activation of pure O2 as an oxygen source, adjusting the pressure of a growth chamber to 1*10<-6>-1*10<-5>Torr and growing the ZnMgBeO film on the substrate by using pure metals Zn source, Mg source and Be source as reaction sources. By the method disclosed by the invention, the doping concentration of Be is easily controlled, the quality of the film can be effectively guaranteed and the prepared ZnMgBeO film has excellent optical and electrical properties. By doping Be, the defect luminescence can be effectively prevented, the luminescence property of the ZnMgBeO film is greatly increased and meanwhile, the background electron concentration of the ZnMgBeO film is decreased; therefore, a foundation is laid for preparation of a ZnO-based optoelectronic device having high luminescent property.