Oxide semiconductor thin film transistor

Abstract

The invention provides an oxide semiconductor thin film transistor which comprises a substrate, a gate electrode, an insulation dielectric layer and an oxide semiconductor channel layer, wherein the gate electrode, the insulation dielectric layer and the oxide semiconductor channel layer are sequentially arranged on the substrate, the insulation dielectric layer enables the gate electrode and the oxide semiconductor channel layer to be insulted, a drain electrode and a source electrode are arranged on the upper surface of the oxide semiconductor channel layer, a gap between the drain electrode and the source electrode is d1, the length of an overlapping region of the source electrode and the gate electrode in the horizontal direction is d2, contact between the source electrode and the oxide semiconductor channel layer is schottky contact, and the contact between the drain electrode and the oxide semiconductor channel layer is ohmic contact. The short-channel effect on the oxide semiconductor thin film transistor is small due to new geometrical characteristics and operating principles, and the oxide semiconductor thin film transistor is favorable for improvement of consistency.

Description

technical field [0001] The invention relates to an oxide semiconductor thin film transistor, which belongs to the field of flat panel display. Background technique [0002] Thin-film transistors (TFTs), as active drive devices for flat-panel displays, have become key technologies in the field of flat-panel displays. Oxide semiconductor (such as IGZO, AZO, GZO, ZnO, etc.) thin film transistors have good development prospects due to their high transparency, high mobility, high current switching ratio, low process temperature, and simple manufacturing process. Used on high-performance TFT-LCD or AMOLED displays. [0003] However, the threshold voltage of the current oxide semiconductor thin film transistors tends to drift over time during operation (such as in constant voltage or constant current mode), which affects the stability of the threshold voltage and thus affects the brightness of display pixels. adverse effects. [0004] Studies have found that the concentration of...

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Problems solved by technology

When the thin film transistor is working, the saturation current is determined by the pinch-off of the conduction channel at the drain end, and the carrier concentration is high, which increases the influence on the threshold voltage, which in turn affects the stability of the oxide semiconductor thin film transistor. sex

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